khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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PDF
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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PDF
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LM8550
Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo
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2N2222/A
KTN2222/A
2SA1150
KTA1272
2SA1510
2SB546A
2N2369/A
KTN2369/A
2SA1151
KTA1266
LM8550
KTD2026
2SC2320 equivalent
NEC 12F DATASHEET
2N3904 MOTOROLA
2sc2240 equivalent
2N3906 MOTOROLA
2sc1983
2N5400 MOTOROLA
2SD1960
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PDF
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3906c
Abstract: 2N3906C marking 2n 2N3906
Text: SEMICONDUCTOR 2N3906C MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking 2N 1 3906C K 3 No. Item 016 2 4 Marking Description 2N Series Name 3906C Device Name KEC K KEC CORP. Lot No. 016 Device Name 2000. 12. 27 Revision No : 0 Year
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Original
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2N3906C
3906C
3906c
2N3906C
marking 2n
2N3906
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PDF
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2N3906
Abstract: 3906 2n3906 equivalent transistor transistor 2N3906 datasheet 2n3906 equivalent transistor 2N3906 2n3906 datasheet data sheet transistor 2n3906 3906 2n 2N3906 diode
Text: SEMICONDUCTOR 2N3906 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking 2N 1 3906 K 3 No. Item 816 2 4 Marking Description 2N Series Name 3906 Device Name KEC K KEC CORP. Lot No. 816 Device Name 1998. 6. 23 Revision No : 0 8 Year
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2N3906
2N3906
3906
2n3906 equivalent transistor
transistor 2N3906 datasheet
2n3906 equivalent
transistor 2N3906
2n3906 datasheet
data sheet transistor 2n3906
3906 2n
2N3906 diode
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PDF
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CHINA TV FBT
Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: [email protected] Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV
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O-92M
KRC102M
KRC112M
O-92L
KTN2369,
KTC3194
KTC3197,
KTC3198
KTC945B
KIA431
CHINA TV FBT
transistor 2N3906 smd 2A SOT23
TS4B05G
transistor 2N3904 smd 2A SOT23
fbt tv
KIA7812API
KIA431A transistor
transistor KIA431A
CHINA TV uoc
2N60 MOSFET SMPS
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PDF
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KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION
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USFB053
USFB13
USFB13A
USFB13L
USFB14
USFZ10V
USFZ11V
USFZ12V
USFZ13V
USFZ15V
KF6N60
2SK3850 equivalent
KF9N25
KF7N50
MDF10N65b transistor
PANASONIC ZENER
Kf10n60
KIA278R12PI equivalent
kid65003ap equivalent
kia578r05
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PDF
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2N3906S
Abstract: 2N3904S 2N3904S SOT-23 2N3906S SOT-23 1N916 marking 106V
Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. 2N3906S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES A MILLIMETERS 2.93+0.20 B 1.30+0.20/-0.15 C D 1.30 MAX 0.45+0.1 5 /-0 .05 E 2.40+0.30/-0.20 DIM
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OCR Scan
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2N3906S
-50nA
-50mA,
2N3904S.
300ns
1N916
20/xs
300//S,
2N3906S
2N3904S
2N3904S SOT-23
2N3906S SOT-23
marking 106V
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PDF
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2N3904
Abstract: 2N3906
Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA 2N3906 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c e x = -50nA Max. , IBL=-50nA(Max.) @ VCe= -30V , V eb=-3V . • Excellent DC Current Gain Linearity.
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OCR Scan
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2N3906
-50nA
-50mA,
2N3904.
300ns
1n916
20/as
300//S,
2N3904
2N3906
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PDF
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1N916
Abstract: 2N3904C 2N3906C
Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA 2N3906C EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c e x = -50nA Max. , IBL=-50nA(Max.) @ VCe = -30V , V eb = -3V . • Excellent DC Current Gain Linearity.
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OCR Scan
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2N3906C
-50nA
-50mA,
2N3904C.
300ns
1N916
20/xs
300//S,
1N916
2N3904C
2N3906C
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PDF
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2N3906U
Abstract: Scans-00124840
Text: KEC KOREA E LE C T R O N IC S CO.,LTD. SEMICONDUCTOR TECHNICAL DATA 2N3906U EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c e x = -50nA Max. , IBL=-50nA(Max.) @VCe =-30V, V eb=-3V .
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OCR Scan
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2N3906U
-50nA
-50mA,
300ns
1n916
20/xs
300//S,
2N3906U
Scans-00124840
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PDF
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1N916
Abstract: 20MS 2N3904C 2N3906C transistor 1tp
Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA 2N3904C EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c e x =50nA Max. , IBL=50nA(Max.) @V ce=30V, Veb=3V. • Excellent DC Current Gain Linearity.
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OCR Scan
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2N3904C
2N3906C.
300ns
1N916
300//S,
20MS
2N3904C
2N3906C
transistor 1tp
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PDF
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20MS
Abstract: 2N3904 2N3906
Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA 2N3904 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcE x = 5 0 n A M a x . , lB L = 50n A (M ax.) @ V ce =30V , Veb=3V.
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OCR Scan
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2N3904
2N3906.
300ns
300//S,
20MS
2N3904
2N3906
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PDF
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2N3904U
Abstract: 2N3906U 1N916 20MS ST30
Text: KEC SEMICONDUCTOR TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. 2N3904U EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current ; IcEx=50nA M ax. , lBL=50nA(M ax.) Œ2 @ V ce=30V, V eb=3V. • Excellent DC Current Gain Linearity.
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OCR Scan
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2N3904U
2N3906U.
2N3904U
2N3906U
1N916
20MS
ST30
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PDF
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BS33G
Abstract: 2N3906V transistor 2N3 marking O9
Text: SEMICONDUCTOR TECHNICAL DATA 2N3906V EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : Icgj^-SOnAiMax. , IBL=-50nA Max.) @VCe=-3 OV, V EB=-3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage
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OCR Scan
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2N3906V
-50nA
-50mA,
300/iS,
BS33G
2N3906V
transistor 2N3
marking O9
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PDF
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2N3906U
Abstract: 1N916 2N3904U
Text: SEMICONDUCTOR TECHNICAL DATA 2N3906U EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx=-50nA Max. , lBL=~50nA(Max.) @VCe=-30V, V eb=-3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage
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OCR Scan
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2N3906U
-50nA
-50mA,
2N3904U.
2N3906U
1N916
2N3904U
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA 2N3906E EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES r ? -1 • Low Leakage Current : Icgj^-SOnAiMax. , IBL=-50nA Max.) @VCe=-3 OV, V EB=-3 V. • Excellent DC Current Gain Linearity.
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OCR Scan
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2N3906E
-50nA
-50mA,
2N3904E.
Curre-10/iA,
-10mA
-50mA
-100mA
Ic--50m
100MHz
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PDF
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KEC 2N3906
Abstract: 2N3906 transistor 2N3
Text: SEM ICONDUCTOR 2N3906 TECHN ICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I ce-,—-50nA Max. , IBL=-50nA(Max.) D IM A -jä @V Ce=-3 OV, V EB=-3 V. G- 1 • Excellent D C Current Gain Linearity.
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OCR Scan
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2N3906
---50nA
-50nA
-50mA,
KEC 2N3906
2N3906
transistor 2N3
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PDF
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2N3904U
Abstract: 2N3906U
Text: SEM IC O N D U C T O R 2N3906U TECHN ICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SW ITCHING APPLICATION. FEATURES DIM A • Low Leakage Current B C : Icgj^-SOnAiMax. , IBL=-50nA Max.) D E @VCe=-3 OV, V EB=-3 V. G H • Excellent DC Current Gain Linearity.
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OCR Scan
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2N3906U
-50nA
-50mA,
2N3904U.
42db0
300/iS,
2N3904U
2N3906U
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA 2N3906U EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : Ic E x = -5 0 n A M a x . , lB L = ~ 5 0 n A (M ax .) @ V Ce = -3 0 V , V eb = -3 V . • Excellent DC Current Gain Linearity.
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OCR Scan
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2N3906U
-50mA,
2N3904U.
300ns
1N916
20/xs
300//S,
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PDF
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Untitled
Abstract: No abstract text available
Text: SEM IC O N D U C T O R 2N3906C TECHN ICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : Ice-,—-50nA Max. , IBL=-50nA(Max.) D IM A -jä @VCe=-3 OV, V EB=-3 V. G- 1 • Excellent DC Current Gain Linearity.
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OCR Scan
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2N3906C
---50nA
-50nA
-50mA,
2N3904C.
300/iS,
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PDF
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2N3906 hie
Abstract: 1N916 2N3904 2N3906 KEC 2N3906
Text: SEMICONDUCTOR TECHNICAL DATA 2N3906 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : Ic E x = -5 0 n A M a x . , lB L = ~ 5 0 n A (M ax .) @ V Ce = -3 0 V , V eb = -3 V . • Excellent DC Current Gain Linearity.
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OCR Scan
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2N3906
-50nA
-50mA,
2N3904.
300ns
1N916
20/xs
300//S,
2N3906 hie
2N3904
2N3906
KEC 2N3906
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PDF
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1N916
Abstract: 2N3904C 2N3906C
Text: SEMICONDUCTOR TECHNICAL DATA 2N3906C EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : Ic E x = -5 0 n A M a x . , lB L = ~ 5 0 n A (M ax .) @ V Ce = -3 0 V , V eb = -3 V . • Excellent DC Current Gain Linearity.
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OCR Scan
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2N3906C
-50nA
-50mA,
2N3904C.
300ns
1N916
20/xs
300//S,
2N3904C
2N3906C
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PDF
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2N3906S SOT-23
Abstract: 2N3904S 2N3904S SOT-23 2N3906S 1N916
Text: SEMICONDUCTOR TECHNICAL DATA 2N3906S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM A B C D E G H J • Low Leakage Current : IcEx=-50nA Max. , lBL=~50nA(Max.) @ V Ce = -3 0 V , V eb = -3 V . • Excellent DC Current Gain Linearity.
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OCR Scan
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2N3906S
-50nA
-50mA,
2N3904S.
300ns
1N916
20/xs
300//S,
2N3906S SOT-23
2N3904S
2N3904S SOT-23
2N3906S
1N916
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PDF
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