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    KM23V8000DG Search Results

    KM23V8000DG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM23V8000DG Samsung Electronics 8M-Bit (1Mx8) CMOS MASK ROM Original PDF

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    KM23V8000D

    Abstract: KM23V8000DG
    Text: KM23V8000D G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 1,048,576 x 8 bit organization • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage :single +3.0V/ single +3.3V • Current consumption


    Original
    KM23V8000D 100ns 120ns KM23V8000D 32-DIP-600 KM23V8000DG 32-SOP-525 KM23V8000DG PDF

    KM23V8000D

    Abstract: KM23V8000DG
    Text: PRELIMINARY CMOS MASK ROM KM23V8000D G 8M-Bit (1Mx8) CMOS MASK ROM FEATURES ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü GENERAL DESCRIPTION 1,048,576 x 8 bit organization Fast access time 3.3V Operation : 100ns(max.) 3.0V Operation : 120ns(max.) Supply voltage : 2.7V to 3.6V


    Original
    KM23V8000D 100ns 120ns 30/25mA KM23V8000D 32-DIP-600 KM23V8000DG 32-SOP-525 100pF KM23V8000DG PDF

    KM23V8000D

    Abstract: KM23V8000DG
    Text: KM23V8000D G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 1,048,576 x 8 bit organization • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage :single +3.0V/ single +3.3V • Current consumption


    Original
    KM23V8000D 100ns 120ns KM23V8000D 32-DIP-600 KM23V8000DG 32-SOP-525 118MAX KM23V8000DG PDF

    Untitled

    Abstract: No abstract text available
    Text: KM23V800QD G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION . 1,048,576 x 8 bit organization . Fast access time 3.3V Operation : 100ns(max.) 3.0V Operation : 120ns(max.) . Supply voltage : 2.7V to 3.6V . Current consumption Operating : 30/25mA(max.)


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    KM23V800QD 100ns 120ns 30/25mA KM23V8000D 32-DIP-600 KM23V8000DG 32-SOP-525 KM23V8000D 100pF PDF