Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    KM416C1204 Search Results

    SF Impression Pixel

    KM416C1204 Price and Stock

    Samsung Semiconductor KM416C1204CT-45

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics KM416C1204CT-45 125
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Samsung Semiconductor KM416C1204CJ-50

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics KM416C1204CJ-50 47
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Samsung Semiconductor KM416C1204CJ-5

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics KM416C1204CJ-5 19
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Samsung Semiconductor KM416C1204CJ-6

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics KM416C1204CJ-6 2
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components KM416C1204CJ-6 28
    • 1 $8.67
    • 10 $4.335
    • 100 $4.335
    • 1000 $4.335
    • 10000 $4.335
    		Buy Now

    SEC KM416C1204BT-6

    1M X 16 EDO DRAM, 60 ns, PDSO44
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM416C1204BT-6 34
    • 1 $10.48
    • 10 $7.86
    • 100 $7.074
    • 1000 $7.074
    • 10000 $7.074
    		Buy Now
    Find more KM416C1204 price and stock on Findchips.com

    KM416C1204 Datasheets (50)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM416C1204BJ-45 Samsung Electronics 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Scan PDF
    KM416C1204BJ-5 Samsung Electronics 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Scan PDF
    KM416C1204BJ-6 Samsung Electronics 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Scan PDF
    KM416C1204BJ-7 Samsung Electronics 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Scan PDF
    KM416C1204BJ-L45 Samsung Electronics 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Scan PDF
    KM416C1204BJ-L5 Samsung Electronics 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Scan PDF
    KM416C1204BJ-L6 Samsung Electronics 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Scan PDF
    KM416C1204BJ-L7 Samsung Electronics 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Scan PDF
    KM416C1204BT-45 Samsung Electronics 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Scan PDF
    KM416C1204BT-5 Samsung Electronics 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Scan PDF
    KM416C1204BT-6 Samsung Electronics 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Scan PDF
    KM416C1204BT-7 Samsung Electronics 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Scan PDF
    KM416C1204BT-L45 Samsung Electronics 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Scan PDF
    KM416C1204BT-L5 Samsung Electronics 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Scan PDF
    KM416C1204BT-L6 Samsung Electronics 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Scan PDF
    KM416C1204BT-L7 Samsung Electronics 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Scan PDF
    KM416C1204C Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416C1204CJ Samsung Electronics KM416C1204CJ 1M x 16-Bit CMOS Dynamic RAM With Extended Data Out Organization = 1Mx16 Mode = Edo Voltage(V) = 5 Refresh = 1K/16ms Speed(ns) = 45,50,60 Package = 42SOJ,44TSOP2,50TSOP2 Power = Normal,low Production Status = Eol Comments = - Original PDF
    KM416C1204CJ-45 Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM416C1204CJ-5 Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF

    KM416C1204 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C1204C

    Abstract: KM416C1004C KM416C1204C KM416V1004C KM416V1204C
    Text: KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K


    Original     		PDF KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C 16Bit 1Mx16 using1204C 400mil C1204C KM416C1004C KM416C1204C KM416V1004C KM416V1204C

    Untitled

    Abstract: No abstract text available
    Text: KM416C1204A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: KM416C1204A-6/A-L6/A-F6 tRAC tCAC tRC tHPC 60ns 17ns 110ns 24ns KM416C1204A-7/A-L7/A-F7 70ns 20ns 130ns 29ns KM416C1204A-8/A-L8/A-F8


    OCR Scan     		PDF KM416C1204A/A-L/A-F KM416C1204A-6/A-L6/A-F6 110ns KM416C1204A-7/A-L7/A-F7 130ns KM416C1204A-8/A-L8/A-F8 150ns cycle/16m cycle/128msCLE 71b4142

    la 1004a

    Abstract: No abstract text available
    Text: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS ORAM 1 M x 1 6B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Dxtended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply


    OCR Scan     		PDF KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A 1Mx16 la 1004a

    KM416C1204AJ

    Abstract: km416c1204a 1076 GE
    Text: CMOS DRAM KM416C1204A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1204A/A-L/A-F is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance


    OCR Scan     		PDF KM416C1204A/A-L/A-F KM416C1204A-6/A-L6/A-F6 KM416C1204A-7/A-L7/A-F7 KM416C1204A-8/A-L8/A-F8 110ns 130ns 150ns KM416C1204A/A-L/A-F KM416C1204AJ km416c1204a 1076 GE

    C1204B

    Abstract: t2g memory
    Text: KM416C1204BJ CMOS DRAM 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM416C1204BJ 16Bit C1204B t2g memory

    km416c1204

    Abstract: No abstract text available
    Text: KM416C1004B, KM416C1204B KM416V1004B, KM416V1204B Preliminary CMOS DRAM 1Mx16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM416C1004B, KM416C1204B KM416V1004B, KM416V1204B 1Mx16Bit 1Mx16 km416c1204

    C1204C

    Abstract: KM416C1004C KM416C1204C KM416V1004C KM416V1204C V1004C
    Text: KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data O ut Mode offers high speed random access of mem ory cells within the sam e row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K


    OCR Scan     		PDF KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C 16Bit 1Mx16 C1204C KM416C1004C KM416C1204C KM416V1004C KM416V1204C V1004C

    Untitled

    Abstract: No abstract text available
    Text: KM416C1204BJ CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM416C1204BJ 1Mx16 16C1204BJ 40SOJ

    31DQ11

    Abstract: No abstract text available
    Text: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Dxtended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply


    OCR Scan     		PDF KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A 16Bit 1Mx16 31DQ11

    Untitled

    Abstract: No abstract text available
    Text: KM416C1204BT CMOS D R A M ELECTRONICS 1 M x 1 6 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM416C1204BT 1Mx16 416C1204BT D03D425 DD3G42h

    Untitled

    Abstract: No abstract text available
    Text: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Dxtended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply


    OCR Scan     		PDF KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A 16Bit 1Mx16

    KM416V1204A

    Abstract: C1004A KM416V1004A km416c1204a
    Text: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Dxtended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply


    OCR Scan     		PDF KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A 1Mx16 005033T KM416V1204A C1004A KM416V1004A km416c1204a

    C1204B

    Abstract: No abstract text available
    Text: KM416C1204BT ELECTRONICS CMOS DRAM 1 M x 1 6 B i t C M O S Dynamic H A M with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mod offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM416C1204BT 16Bit 1Mx16 03042b C1204B

    UA529

    Abstract: No abstract text available
    Text: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS DRAM 1 Mx16 Bi t CMOS Dynamic RAM with Extended Data Out DESCRIPTION T h is is a fa m ily o f 1 ,0 4 8 ,5 7 6 x 1 6 bit D x te n d e d D a ta O u t C M O S D R A M s. D x te n d e d D a ta O u t m o d e o ffe rs


    OCR Scan     		PDF KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A UA529

    04BJ

    Abstract: I2142 v10204b
    Text: KM416C1004B, KM416C1204B KM416V1004B, KM416V1204B Preliminary CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM416C1004B, KM416C1204B KM416V1004B, KM416V1204B 16Bit 1Mx16 04BJ I2142 v10204b

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362205C2W/C2WG 2Mx36 DRAM SIMM 1MX 16 Base, Quad CAS EDO Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5362205C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362205CW/CWG to KMM5362205C2W/C2WG caused by PCB revision .


    OCR Scan     		PDF KMM5362205C2W/C2WG 2Mx36 KMM5362205CW/CWG KMM5362205C2W/C2WG 1Mx16 KMM5362205C2W 2Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: KMM364Ë224AJ DRAM MODULE KMM364E224AJ Fast Page with EDO Mode 2Mx64 DRAM DIMM based on 1M x 1 6 ,1 K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364F224AJ is a 2M bit X 64 Dynamic RAM high density memory module. The Samsung KMM364E224AJ consists of eight CMOS


    OCR Scan     		PDF KMM364Ã 224AJ KMM364E224AJ 2Mx64 KMM364F224AJ 1Mx16bit 44-pin 400mil 48pin

    Untitled

    Abstract: No abstract text available
    Text: KM416V1004BJ CMOS DRAM ELECTR ONICS 1M x16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM416V1004BJ x16Bit 1Mx16 30bSS 40SOJ 7Rb4142 Q030b5t>

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM364E124B J DRAM MODULE KMM364E124BJ Fast Page with EDO Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V G ENER AL DESCRIPTION FEATURES • Part Identification - KMM364E124BJ 1024 cycles/16ms, SOJ The Samsung KMM364E124BJ is a 1M bit x 64


    OCR Scan     		PDF KMM364E124B KMM364E124BJ 1Mx64 1Mx16, KMM364E124BJ cycles/16ms, 1Mx16bit 42-pin

    VG264265B

    Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
    Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D


    OCR Scan     		PDF 256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference

    4MB DRAM

    Abstract: 4MX16 1MX16
    Text: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .


    OCR Scan     		PDF KM41C4000D/KM41V4000D. KM44C1000D/KM44V1000D. KM44C1003D -KM44C1004D/KM44V1004D. KM44C1005D -KM48C512D/KM48V512D. KM48C512D 4MB DRAM 4MX16 1MX16

    KMM5361205BWG

    Abstract: No abstract text available
    Text: Preiminary DRAM MODULE KMM5361205BW/BWG KMM5361205BW/BWG Fast Page Mode with Extended Data Out 1Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM G ENER AL DESC RIPTIO N FEATURES The Sam sung KM M 5361205BW is a 1M bit x 36 • Part Identification


    OCR Scan     		PDF KMM5361205BW/BWG KMM5361205BW/BWG 1Mx36 5361205BW 5361205B 1Mx16 42-pin 24-pin 72-pin KMM5361205BWG

    KM44C4000aS 6

    Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6


    OCR Scan     		PDF KM41C4000C-5 KM41C4000CL-5 KM41C4002C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000CL-7 KM41C4002C-7 KM41V4000C-7 KM41V4000CL-7 KM41C4000C-8 KM44C4000aS 6 KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL

    Untitled

    Abstract: No abstract text available
    Text: KM416C1004A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1004A/A-L/A-F is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance


    OCR Scan     		PDF KM416C1004A/A-L/A-F KM416C1004A/A-L/A-F 42-LEAD 44-LEAD