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    KM416S16230 Search Results

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    KM416S16230 Price and Stock

    Samsung Semiconductor KM416S16230AT-GL

    16M X 16 SYNCHRONOUS DRAM, 5.4 NS, PDSO54
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM416S16230AT-GL 44
    • 1 $6.66
    • 10 $3.33
    • 100 $3.33
    • 1000 $3.33
    • 10000 $3.33
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    KM416S16230 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM416S16230AT-G/F8 Samsung Electronics 256Mbit SDRAM Original PDF
    KM416S16230AT-G/FA Samsung Electronics 256Mbit SDRAM Original PDF
    KM416S16230AT-G/FH Samsung Electronics 256Mbit SDRAM Original PDF
    KM416S16230AT-G/FL Samsung Electronics 256Mbit SDRAM Original PDF

    KM416S16230 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KM416S16230

    Abstract: No abstract text available
    Text: KM416S16230A CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May 1999 KM416S16230A CMOS SDRAM Revision History


    Original     		KM416S16230A 256Mbit 16bit A10/AP KM416S16230 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416S16230A CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 JUN 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 Jun 1999 KM416S16230A CMOS SDRAM Revision History


    Original     		KM416S16230A 256Mbit 16bit A10/AP PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM416S16230A 4M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM44S64230A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS


    Original     		KM416S16230A 16Bit KM44S64230A A10/AP PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416S16230A Preliminary PC133 CMOS SDRAM Revision History Revision 0.0 Jan., 1999 • PC133 first published. REV. 0 Jan. '99 Preliminary PC133 CMOS SDRAM KM416S16230A 4M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply


    Original     		KM416S16230A PC133 16Bit KM44S64230A A10/AP PDF

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original     		256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260 PDF

    Untitled

    Abstract: No abstract text available
    Text: PC100 SODIMM KMM464S1654AT1 Revision History Revision 0.1 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    Original     		KMM464S1654AT1 PC100 16Mx16 KM416S16230AT PDF

    Untitled

    Abstract: No abstract text available
    Text: PC100 SODIMM KMM464S3254AT1 Revision History Revision 0.1 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    Original     		KMM464S3254AT1 PC100 16Mx16 KM416S16230AT PDF

    KMM366S1654AT-G8

    Abstract: KMM366S1654AT-GH KMM366S1654AT-GL
    Text: KMM366S1654AT PC100 Unbuffered DIMM Revision History [Rev.1] March 25.1999 Corrected refresh capability from 4096 Cycles/64ms to 8192 Cycles/64ms. Rev.1 Mar. 1999 KMM366S1654AT PC100 Unbuffered DIMM KMM366S1654AT SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		KMM366S1654AT PC100 Cycles/64ms Cycles/64ms. KMM366S1654AT 16Mx64 16Mx16, KMM366S1654AT-G8 KMM366S1654AT-GH KMM366S1654AT-GL PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary PC100 144pin SDRAM SODIMM KMM464S1654AT1 KMM464S1654AT1 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM464S1654AT1 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM464S1654AT1 consists of four CMOS 16M x 16 bit


    Original     		KMM464S1654AT1 KMM464S1654AT1 PC100 144pin 16Mx64 16Mx16, 400mil 144-pin PDF

    XC5L

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM416S16230A 4M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM44S64230A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS


    OCR Scan     		KM416S16230A 16Bit KM44S64230A 10/AP XC5L PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM416S16230A 4M X 16Bit X 4 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM 44S64230A is 268,435,456 bits synchronous high data • JED EC standard 3.3V pow er supply rate Dynam ic RAM organized as 4 x 4,196,304 w ords by 16


    OCR Scan     		KM416S16230A 16Bit 44S64230A 10/AP PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM366S1654AT PC100 SDRAM MODULE KMM366S1654AT SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1654AT is a 16M bit x 64 Synchro­ • Performance range nous Dynamic RAM high density memory module. The Sam­


    OCR Scan     		KMM366S1654AT PC100 KMM366S1654AT 16Mx64 16Mx16, M366S1654AT-G8 125MHz 400mil PDF

    Untitled

    Abstract: No abstract text available
    Text: PC100 SDRAM MODULE KMM366S1654ATS KMM366S1654ATS SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1654ATS is a 16M bit x 64 Synchro­ • Performance range nous Dynamic RAM high density memory module. The Sam ­


    OCR Scan     		PC100 KMM366S1654ATS KMM366S1654ATS 16Mx64 16Mx16, 400mil 168-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: SERIAL PRESENCE DETECT SDRAM MODULE PC100 Unbuffered SDRAM SODIMM 144pin SPD Specification REV. 1.50 November 1998 REV. 1.50 Nov. 1998 SERIAL PRESENCE DETECT SDRAM MODULE KMM464S424CT1-FH/FL •Organization : 4MX64 •Composition : 4MX16 *4 •Used component p a rt# : KM416S4030CT-FH/FL


    OCR Scan     		PC100 144pin) KMM464S424CT1-FH/FL 4MX64 4MX16 KM416S4030CT-FH/FL 4K/64ms 100MHz PDF

    km48s2020ct

    Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
    Text: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks


    OCR Scan     		KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT KM44S16020BT KM48S8020BT KM416S4020BT KM416S4021BT KM44S160308T KM48S8030BT S823B 4MX16 54-PIN u108h KM48S2020 44s16030 PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM366S3254AT PC100 SDRAM MODULE KMM366S3254AT SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S3254AT is a 32M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM366S3254AT KMM366S3254AT PC100 32Mx64 16Mx16, 400mil 168-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: PC100 SDRAM MODULE KMM366S3254ATS KMM366S3254ATS SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S3254ATS is a 32M bit x 64 Synchro­ • Performance range nous Dynamic RAM high density memory module. The Sam ­


    OCR Scan     		PC100 KMM366S3254ATS KMM366S3254ATS 32Mx64 16Mx16, 400mil 168-pin PDF

    ad 149

    Abstract: No abstract text available
    Text: KMM366S3254AT PC100 SDRAM MODULE KMM366S3254AT SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S3254AT is a 32M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM366S3254AT KMM366S3254AT PC100 32Mx64 16Mx16, 400mil 168-pin ad 149 PDF

    KMM366S424BTL-G0

    Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
    Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .


    OCR Scan     		KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT 1Mx16 KM44S16020BT KM48S8020BT KM416S4020BT ------------------------------------16Mx4 4Mx64 KMM366S424BTL-G0 KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT PDF