Untitled
Abstract: No abstract text available
Text: KM44C401OA/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C401OA/AL/ALL/ASL is a high speed CMOS 4,194,304 b it x 4 Dynamic Random Access Memory. Its design is optim ized for high
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KM44C401OA/AL/ALL/ASL
KM44C401OA/AL/ALL/ASL
KM44C401OA/AL/ALL/ASL-5
KM44C401OA/AL/ALL/ASL-6
110ns
KM44C401OA/AL/ALL/ASL-7
130ns
KM44C401OA/AL/ALL/ASL-8
150ns
300MIL)
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Untitled
Abstract: No abstract text available
Text: KM44C4010 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4010 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C4010
KM44C4010
24-LEAD
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Untitled
Abstract: No abstract text available
Text: KM44C401OA/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C KM 44C 401O A/AL/ALL/A SL-5 50ns 13ns 90ns KM 44C 401O A /A L/A LL/A S L-6 60ns 15ns
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KM44C401OA/AL/ALL/ASL
KM44C401
24-LEAD
400MIL)
400MIL,
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Untitled
Abstract: No abstract text available
Text: KM44C4010A, KM44C4110A CMOS DRAM 4M x 4 Bit CMOS DRAM with Fast Page Mode Write per Bit Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode(Write per Bit mode) CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(2K Ref. or 4K Ref.),
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KM44C4010A,
KM44C4110A
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7-it4142
Abstract: it4142 KM44C4100A A10EZ
Text: KM44C4010A, KM44C4110A CMOS DRAM 4M x 4 Bit CMOS DRAM with Fast Page Mode Write per Bit Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode(Write per Bit mode) CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(2K Ref. or 4K Ref.),
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KM44C401
KM44C4110A
0G20307
7-it4142
it4142
KM44C4100A
A10EZ
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • TTbMlME GOlbSlT 373 «SflGK KM44C4010 CMOS DRAM 4M X 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Mode GENERAL DESCRIPTION FEATURES • Performance range: • • • • • • • • • • • tR A C tC A C
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KM44C4010
KM44C4010-7
130ns
KM44C4010-8
KM44C4010
KM44C4010-6
150ns
001b234
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33A6
Abstract: HA11-7
Text: KM44C401OA, KM44C4110A CMOS DRAM 4M x 4 Bit CMOS DRAM with Fast Page Mode Write per Bit Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode(Write per Bit mode) CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(2K Ref. or 4K Ref.),
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KM44C401OA,
KM44C4110A
33A6
HA11-7
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KM44C4000aS 6
Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6
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KM41C4000C-5
KM41C4000CL-5
KM41C4002C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000CL-7
KM41C4002C-7
KM41V4000C-7
KM41V4000CL-7
KM41C4000C-8
KM44C4000aS 6
KM44C4000AS
KM44C4000A-S
km44c4100as
KM48V2100AL
KM416V256BL
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Untitled
Abstract: No abstract text available
Text: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23
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KM41C1000D
KM44C256D.
KM41C4000C
KM41V4000C.
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23C1001
Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
256Kx4
KM44C256C-6
KM44C256CL-6
KM44C256CL-7
44C256CL-8
KM44C256CSL-6
23C1001
KMM5334100
km 23c 4000B
KMM5362003C
KM681001-25
KM68V257
KM428V256
23c4001
4100C
M681000
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KM418C256
Abstract: KM48C2100AL KM416C254 KM44V4100AL KM44C1003
Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE DRAM Density 1M bil Org. 1Mx1 Power Supply 5V±10% Part Number KM41C1000D# Speed(ns) 60/70/80 Features Fast Page 5V±10% KM44C256D# 60/70/80 Fast Page 4Mx1 5V±10% KM41C4000C# 50/60/70/80 Fast Page KM41C4002C# 60/70/80
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KM41C1000D#
KM41C10OOD-L#
256Kx4)
256Kx4
KM44C256D#
KM44C256D-L#
KM41C4000C#
KM41C4000CL#
KM41C4002C#
KM41V4000C#
KM418C256
KM48C2100AL
KM416C254
KM44V4100AL
KM44C1003
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Untitled
Abstract: No abstract text available
Text: KM44C1012B CMOS DRAM 1M x 4Bit CM O S Dynamic R A M with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1012B is a high speed CMOS 1 ,0 4 8 ,5 7 6 x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C1012B
KM44C1012B-6
KM44C1012B-7
KM44C1012B-8
130ns
150ns
KM44C1012B
20-LEAD
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 Q01S74S QÛ2 I KM44C1012B CMOS DRAM 1 M x 4Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1012B is a high speed CMOS 1 ,0 4 8 ,5 7 6 x 4 Dynamic Random Access Memory. Its
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Q01S74S
KM44C1012B
KM44C1012B
110ns
KM44C1012B-7
130ns
KM44C1012B-8
KM44C1012B-6
150ns
20-LEAD
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KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
KM44C256C-6
KM44C256CL-6
KM44C256CSL-6
KM41C4000C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000C-8
KMCJ532512
KM23C1000-20
KM28C64B
KMM594
KM718B90-12
zip 40pin
30-pin simm memory "16m x 8"
KM41C4000C-6
KM41C16000ALL
KM48V2104AL
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