Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    KM611001J Search Results

    SF Impression Pixel

    KM611001J Price and Stock

    Samsung Electronics Co. Ltd KM611001J-35

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA KM611001J-35 543
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Samsung Electronics Co. Ltd KM611001J-20

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA KM611001J-20 5
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    KM611001J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KM611001/L CMOS SRAM 1M x 1Bit High-Speed CMOS SRAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 2 mA(Max.) 0.5 mA(Max.) - L-ver. Operating KM611001/L -20 : 130 mA(Max.)


    Original     		PDF KM611001/L KM611001/L KM611001P/LP 28-DIP-400 KM611001J/LJ 28-SOJ-400A 576-bit

    KM611001J

    Abstract: KM611001 KM611001-20 KM611001-25 KM611001-35
    Text: KM611001 CMOS SRAM 1M x lB it High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 20,25,35 ns Max. The KM611001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 1.048,576 words by 1 bits. • Low Power Dissipation


    OCR Scan     		PDF KM611001 KM611001-20 KM611001 KM611001-35 KM611001P: 28-D1P-400 KM611001J: 28-SOJ-4QO 576-bit KM611001J KM611001-20 KM611001-25 KM611001-35

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM611001 1,048,576 WORD x 1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 2 0 ,2 5 ,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 100/i A (max.) L-ver. only 2mA (max.) Operating KM611001-20 :130m A (max.)


    OCR Scan     		PDF KM611001 100/i KM611001-20 KM611001-25 KM611001-35 611001P/LP KM611001J/LJ

    VE27

    Abstract: No abstract text available
    Text: KM611001 CMOS SRAM 1M X 1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS) : 2mA (max.! O perating KM 611001P/J-20: 130m A (max) K M 611001P/J-25: 110m A (max)


    OCR Scan     		PDF KM611001 611001P/J-20: 611001P/J-25: 611001P/J-35: KM611001P: 28-pin KM611001J: 400mil) VE27

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D WË 7 T b 4 m 2 D017bm KM611001 330 • SnGK CMOS SRAM 1MX1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.)


    OCR Scan     		PDF D017bm KM611001 KM611001P/J-20: 130mA KM611001P/J-25: 110mA KM611001P/J-35: 100mA KM611001P: 28-pin

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM611001 1 MX 1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.) Operating KM611001P/J-20: 130mA (max) KM611001P/J-25: 110mA (max)


    OCR Scan     		PDF KM611001 KM611001P/J-20: 130mA KM611001P/J-25: 110mA KM611001P/J-35: 100mA KM611001P: 28-pin 400mil)

    Untitled

    Abstract: No abstract text available
    Text: KM611001/L CMOS SRAM 1M X 1Bit High-Speed CMOS SRAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns Max. • Low Power Dissipation Standby (TTL) : 40mA(Max.) (CMOS): 2mA(Max.) 0.5 mA(Max.) - L-ver. Operating KM611001/L-20:130 mA(Max.) KM611001/L-25:110 mA(Max.)


    OCR Scan     		PDF KM611001/L KM611001/L-20 KM611001/L-25 KM611001/L-3 100mA KM611001P/LP: 28-DIP-400 KM611001J/LJ: 28-SQJ-400A KM611001/L

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM611001 1,048,576 WORD x 1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 20, 25, 35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 100/t A (max.) L-ver. only 2mA (max.) Operating KM 611001 -20 : 130mA (max.)


    OCR Scan     		PDF KM611001 100/t 130mA KM611001-25 KM611001-35 KM611001P/LP KM611001J/LJ 28-pin 400mil)

    KM611001

    Abstract: KM611001-20 KM611001-25 KM611001-35
    Text: SAMSUNG ELECTRONICS INC b?E D m T'ìbMmE 0017b41 3 30 • CMOS SRAM KM611001 1 MX 1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.)


    OCR Scan     		PDF KM611001 0017b41 KM611001P/J-20: 130mA KM611001P/J-25: 110mA KM611001P/J-35: 100mA KM611001P: 28-pin KM611001 KM611001-20 KM611001-25 KM611001-35

    Untitled

    Abstract: No abstract text available
    Text: KM611001 CMOS SRAM 1M x1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. (CMOS): 2 mA(Max.) Operating KM611001-20 : 130 mA(Max.) The KM611001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 1.048,576 words


    OCR Scan     		PDF KM611001 KM611001-20 KM611001 576-bit KM611001-35

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM611001 1M X 1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e 20,25,35ns max. • Low Power Dissipation S tandby (TTL) : 40m A (m ax.) (CMOS) : 2mA (max.) Operating KM611001P/J-20: 130m A (max) KM611001P/J-25: 110m A (max)


    OCR Scan     		PDF KM611001 KM611001P/J-20: KM611001P/J-25: KM611001P/J-35: KM611001P: 28-pin KM611001J: 576-bit