Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    KM6164002BI Search Results

    KM6164002BI Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM6164002BIJ-10 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002BIJ-12 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002BIJ-15 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002BIT-10 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002BIT-12 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF
    KM6164002BIT-15 Samsung Electronics 256K x 16 Bit High-Speed CMOS Static RAM Original PDF

    KM6164002BI Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KM616400

    Abstract: No abstract text available
    Text: PRELIMPreliminaryPPPPPPPPPINARY PRELIMINARY CMOS SRAM KM6164002B, KM6164002BI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data


    Original
    KM6164002B, KM6164002BI 256Kx16 44-TSOP2-400F KM616400 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMPreliminaryPPPPPPPPPINARY KM6164002B, KM6164002BI CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Design Target.


    Original
    KM6164002B, KM6164002BI 256Kx16 250mA 240mA 230mA 44-TSOP2-400F PDF

    512X16

    Abstract: KM6164002B 512X16 sram
    Text: Pro-iïiTTin&y CMOS SRAM KM6164002B, KM6164002BI 256K x 16 Bit High-Speed CMOS Static RAM FEATURES G ENER AL DESCRIPTION •• Fast Access Time 10,12,15 * Max. - Low Power Dissipation Standby (TTL) : 40* • (Max.) The KM6164002B is a 4,194,304-bit high-speed Static Random


    OCR Scan
    KM6164002B, KM6164002BI 256Kx KM6164002B I/O16 KM6164002BJ 44-SOJ-400 KM6164002BT 512X16 512X16 sram PDF

    Untitled

    Abstract: No abstract text available
    Text: P r r ^ - m in e ^ Y KM6164002B, KM6164002BI CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES G E N E R A L D E S C R IP T IO N •• Fast Access Time 10,12,15* • Max. - Low Power Dissipation The KM6164002B is a 4,194,304-bit high-speed Static Random


    OCR Scan
    KM6164002B, KM6164002BI KM6164002B 304-bit 71b4142 G03b70Q KM6164002Bl 44-TS PDF

    Untitled

    Abstract: No abstract text available
    Text: KM6164002B, KM6164002BI CMOS SRAM Document Tills 256Kx16 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Jan. 1st, 1997


    OCR Scan
    KM6164002B, KM6164002BI 256Kx16 44-TSOP2-400F PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM6164002B, KM6164002BI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


    OCR Scan
    KM6164002B, KM6164002BI 256Kx16 44-SOJ-400 44-TSO P2-400F PDF

    Untitled

    Abstract: No abstract text available
    Text: KM6164002B, KM6164002Bi CMOS SRAM 2S6KX16 Bit High-Speed CMOS Static RAM FEATURES G E N E R A L D E S C R IP T IO N • Fast Access Time 10,12,15ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM6164002B-10 : 260mA(Max.)


    OCR Scan
    KM6164002B, KM6164002Bi 2S6KX16 KM6164002B-10 260mA KM6164002B 255mA 250mA KM6164002BJ PDF

    SRAM sheet samsung

    Abstract: No abstract text available
    Text: Prelim inary CMOS SRAM KM 6164002B, KM6164002BI D o cu m e n t Title 256Kx16 Bit High Speed Static RAM 5V O perating , Revolutionary Pin out. Operated at Com m ercial and Industrial Tem perature Range. R evision H istory R ev No. H isto ry D raft Data R em ark


    OCR Scan
    KM6164002B, KM6164002BI 256Kx16 SRAM sheet samsung PDF

    Untitled

    Abstract: No abstract text available
    Text: KM6164002B, KM6164002BI CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Jan. 1st, 1997 Design Target


    OCR Scan
    KM6164002B, KM6164002BI 256Kx16 44-TSOP2-400F PDF

    KM736V789T-60

    Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
    Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L


    OCR Scan
    256Kb» 32KX8 KM62256CI-5/5L KM62256CLE KM62256CLI-7/7L KM62256DL-5/5L KM62256DLI-7/7L 512Kb» 64Kx8 KM68512AL-5/5L KM736V789T-60 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L PDF