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    KM64BV4002 Search Results

    KM64BV4002 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM64BV4002J-12 Samsung Electronics 1M x 4-Bit (with OE) High Speed BiCMOS Static RAM 3.3V Scan PDF
    KM64BV4002J-15 Samsung Electronics 1M x 4-Bit (with OE) High Speed BiCMOS Static RAM 3.3V Scan PDF
    KM64BV4002J-20 Samsung Electronics 1M x 4-Bit (with OE) High Speed BiCMOS Static RAM 3.3V Scan PDF

    KM64BV4002 Datasheets Context Search

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    KM64BV4002J-12

    Abstract: KM64BV4002J-15 KM64BV4002J-20
    Text: Advanced Information BiCMOS SRAM KM64BV4002 1,048,576 WORD x 4 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES • Fast Access Time : 12 ,1 5 , 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM 64B V4002J-12: 155mA(Max.)


    OCR Scan     		PDF KM64BV4002 KM64BV4002J-12 155mA KM64BV4002J-15 150mA KM64BV4002J-20 145mA KM64BV4002J 32-SOJ KM64BV4002

    Untitled

    Abstract: No abstract text available
    Text: KM64BV4002 BiCMOS SRAM 1M x 4 Bit With UE High-Speed BiCMOS Static RAM(3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002-12 : 160mA(Max.)


    OCR Scan     		PDF KM64BV4002 KM64BV4002-12 160mA KM64BV4002-13 KM64BV4002-15 KM64BV4002J: 32-SQJ-400 KM64BV4002 304-bit

    Untitled

    Abstract: No abstract text available
    Text: KM64BV4002 CMOS SRAM 1Mx4Bit With /OE High-Speed BiCMOS Static RAM (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max) • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002J-12:160mA(Max.)


    OCR Scan     		PDF KM64BV4002 KM64BV4002J-12 160mA KM64BV4002J-13 KM64BV4002J-15 KM64BV4002J 32-SOJ-400 KM64BV4002 304-bit

    Untitled

    Abstract: No abstract text available
    Text: KM64BV4002 BiCMOS SRAM 1M x 4 Bit With (JE High-Speed BiCMOS Static RAM(3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002-12 : 160mA(Max.)


    OCR Scan     		PDF KM64BV4002 KM64BV4002-12 160mA KM64BV4002-13 KM64BV4002-15 KM64BV4002J: 32-SOJ-4Ã KM64BV4002 304-bit

    SS24V

    Abstract: No abstract text available
    Text: Advanced Information KM64BV4002_ BiCMOS SRAM 1,048,576 WORD x4B it High-Speed BiCMOS Static RAM 3.3VOperating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.)


    OCR Scan     		PDF KM64BV4002_ KM64BV4002J-12: 155mA KM64BV4002J-15: 150mA KM64BV4002J-20: 145mA KM64BV4002J 32-SOJ KM64BV4002 SS24V

    Untitled

    Abstract: No abstract text available
    Text: KM64BV4002 BiCMOS SRAM Document Title 1Mx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993 DesignTarget


    OCR Scan     		PDF KM64BV4002 10/12/15ns 12/15/20ns 32-SOJ-400

    3hM22

    Abstract: pin configuration of 8251 KM64BV4002J-12 KM64BV4002J-15
    Text: KM64BV4002 CMOS SRAM 1Mx4Bit With / OE High-Speed BiCMOS Static RAM (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002J-12:160mA(Max.)


    OCR Scan     		PDF KM64BV4002 KM64BV4002J-12 160mA KM64BV4002J-13 KM64BV4002J-15 KM64BV4002J 32-SOJ-4QO KM64BV4002 304-bit 3hM22 pin configuration of 8251

    KM64BV4002J-12

    Abstract: KM64BV4002J-15 KM64BV4002J-20
    Text: PRELIMINARY BiCMOS SRAM KM64BV4002 1 M x 4 Bit With OE High-Speed BiCMOS Static R AM (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002J-12 : 160 mA(Max.)


    OCR Scan     		PDF KM64BV4002 KM64BV4002J-12 KM64BV4002J-15 150mA KM64BV4002J-20 KM64BV4002J: 32-SOJ-4QO KM64BV4002 304-bit KM64BV4002J-12 KM64BV4002J-15 KM64BV4002J-20

    Untitled

    Abstract: No abstract text available
    Text: KM64BV4002 BiCMOS SRAM Document Title 1Mx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


    OCR Scan     		PDF KM64BV4002 10/12/15ns 12/15/20ns 32-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY BiCMOS SRAM KM64BV4002 1 M x 4 Bit With OE High-Speed BiCMOS Static R AM (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002J-12 :160 mA(Max.)


    OCR Scan     		PDF KM64BV4002 KM64BV4002J-12 KM64BV4002J-15 KM64BV4002J-20: KM64BV4002J: 32-SOJ-4QO KM64BV4002 304-bit

    Untitled

    Abstract: No abstract text available
    Text: KM64BV4002 BiCMOS SRAM D ocum ent Title 1Mx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial Temperature Range. Revision H istory Rev No. Historv Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993


    OCR Scan     		PDF KM64BV4002 10/12/15ns 12/15/20ns

    Untitled

    Abstract: No abstract text available
    Text: KM64BV4002 BiCMOS SRAM 1M x 4 Bit With OE High-Speed BiCM OS Static R A M (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002-12 : 160m A (M ax.)


    OCR Scan     		PDF KM64BV4002 KM64BV4002-12 KM64BV4002-13 KM64BV4002-15 KM64BV4002J: 32-SQJ-400 KM64BV4002 304-bit

    SRAM sheet samsung

    Abstract: No abstract text available
    Text: KM64BV4002 BiCMOS SRAM D o cu m e n t Title 1Mx4 Bit with OE High Speed Static RAM (3.3V Operating), Revolutionary Pin out. Operated at Com m ercial Tem perature Range. R evision H istory R em ark Rev No. H isto ry Rev. 0.0 Initial release w ith Design T arget.


    OCR Scan     		PDF KM64BV4002 10/12/15ns 12/15/20ns 12/15/20ns 0/12nsn 32-SOJ-400 SRAM sheet samsung

    Untitled

    Abstract: No abstract text available
    Text: Advanced Information BiCMOS SRAM KM64BV4002 1,048,576 WORD X 4 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM64BV4002J-12: 155mA(Max.)


    OCR Scan     		PDF KM64BV4002 KM64BV4002J-12: 155mA KM64BV4002J-15: 150mA KM64BV4002J-20: 145mA KM64BV4002J 32-SOJ KM64BV4002

    KM736V789T-60

    Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
    Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L


    OCR Scan     		PDF 256Kb» 32KX8 KM62256CI-5/5L KM62256CLE KM62256CLI-7/7L KM62256DL-5/5L KM62256DLI-7/7L 512Kb» 64Kx8 KM68512AL-5/5L KM736V789T-60 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000

    KM616V4002A

    Abstract: 6161002 ER255 KM732V589
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Guide. 11 2. Ordering Inform ation. 15


    OCR Scan     		PDF KM62256C 128Kx KM68512A KM681000B KM681000C2 KM718B90 KM718BV87AT KM732V588 KM732V589/L. KM716V689 KM616V4002A 6161002 ER255 KM732V589

    SOJ 44

    Abstract: 1MX1 KM6865
    Text: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001


    OCR Scan     		PDF KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL SOJ 44 1MX1 KM6865

    KM736V789-60

    Abstract: 512k*8 sram KM68U4000A
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Tree - 13 2. Product G uid e- 23 3. Ordering Information - 30 II.SRAM DATA SHEET Law Power SRAM 5.0V Operation 1. KM622S6C Family 32Kx8 Commercial, Extended, Industrial Products -


    OCR Scan     		PDF KM622S6C KM62256D KM68S12A KM68512B KM681OOOB 32Kx8 64KX8 128KX8 KM736V789-60 512k*8 sram KM68U4000A

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL

    KM616U1000BL-L

    Abstract: No abstract text available
    Text: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI


    OCR Scan     		PDF KM62256CL KM62256CL-L KM62256CLE KM62256CLE-L KM62256CLI KM62256CLI-L 28-TSOP 28-DIP 28-SOP KM68512CL KM616U1000BL-L

    KM68512

    Abstract: 12BKX8 km6865b
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs


    OCR Scan     		PDF 010/J/T KM68512 12BKX8 km6865b

    al 232 nec

    Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
    Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258


    OCR Scan     		PDF KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference