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Samsung Semiconductor KM68B261AJ-7 32KX8 STANDARD SRAM, 7NS, PDSO32
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	KM68B261AJ-7		4,000			1 $4.5 10 $4.5 100 $4.5 1000 $4.5 10000 $1.575	Buy Now
Samsung Semiconductor KM68B261AJ-8 IC,SRAM,32KX8,BICMOS-TTL,SOJ,32PIN,PLASTIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	KM68B261AJ-8		624			1 $11 10 $11 100 $11 1000 $5.94 10000 $5.94	Buy Now
SEC KM68B261AJ8 Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	KM68B261AJ8		2,208			1 - 10 - 100 - 1000 - 10000 -	Get Quote

KM68B261AJ Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
KM68B261AJ-6		Samsung Electronics	32K x 8-Bit High Speed BiCMOS Static RAM		Scan	PDF
KM68B261AJ-7		Samsung Electronics	32K x 8-Bit High Speed BiCMOS Static RAM		Scan	PDF
KM68B261AJ-8		Samsung Electronics	32K x 8-Bit High Speed BiCMOS Static RAM		Scan	PDF

KM68B261AJ Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Bicmos Processes Abstract: KM68B261A-6 KM68B261AJ 32-SOJ-300 Text: KM68B261A BiCMOS SRAM 32K x 8 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6,7,8ns Max. • Low Power Dissipation Standby (TTL) : 110 mA(Max.) (CMOS) : 20 mA(Max.) Operating Current : 170 mA(f=100MHz) • Single 5V ± 5% Power Supply	Original	KM68B261A 100MHz) KM68B261AJ 32-SOJ-300 KM68B261A 144-bit October-1994 Bicmos Processes KM68B261A-6 KM68B261AJ 32-SOJ-300	PDF
KM68B261A-6 Abstract: KM68B261A-7 KM68B261A-8 Static Random Access Memory Text: KM68B261A BiCMOS SRAM 32Kx8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns Max. • Low Power Dissipation Standby (TT L): 110 mA (Max.) (CMO S): 20 mA (Max.) Operating Current: 170 mA (f=100MHz) • Single 5V±5%T>ower Supply	OCR Scan	KM68B261A 32Kx8 100MHz) KM68B261AJ SOJ-300 KM68B261A 144-bit 0D237Sb KM68B261A-6 KM68B261A-7 KM68B261A-8 Static Random Access Memory	PDF
Untitled Abstract: No abstract text available Text: KM68B261A BiCMOS SRAM 32Kx8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns Max. • Low Power Dissipation Standby (TTL) : 110 mA (Max.) (CMOS) : 20 mA (Max.) Operating C urrent: 170 mA (f= 100MHz) • Single S V iS ^ il^ o w e r S upply	OCR Scan	KM68B261A 32Kx8 100MHz) KM68B261AJ SOJ-300 KM68B261A 144-bit	PDF
Untitled Abstract: No abstract text available Text: KM68B261A BiCMOS SRAM 32Kx8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns Max. • Low Power Dissipation Standby (TTL) : 110 mA (Max.) (CMOS) : 20 mA (Max.) Operating Current: 170 mA (f=100MHz) • Single 5V±5% Power Supply	OCR Scan	KM68B261A 32Kx8 100MHz) KM68B261AJ SOJ-300 KM68B261A 144-bit	PDF
Untitled Abstract: No abstract text available Text: KM68B261A BiCMOS SRAM 32Kx8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 6, 7, 8 ns Max. • Low Power Dissipation Standby (T T L ): 110 mA (Max.) (C M O S ): 20 m A (Max.) Operating C u rre n t: 170 mA (f=100MHz) • S ingle 5V±5%T>ower Supply	OCR Scan	KM68B261A 32Kx8 100MHz) KM68B261AJ SQJ-300 KM68B261A 144-bit 2372b	PDF
Untitled Abstract: No abstract text available Text: KM68B261A BiCMOS SRAM 32K x 8 Bit High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES Fast Access Time 6, 7, 8 § Max. Low Power Dissipation Standby (TTL) (CMOS) : 110 § (Max.) : 2 0 § (Max.) Operating Current : 170§ (f=100MHz) Single 5.0V±5% Power Supply	OCR Scan	KM68B261A 100MHz) KM68B261AJ 32-SOJ-3QO KM68B261A 144-bit May-1997 32-SOJ-400	PDF