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    km418c256bj

    Abstract: No abstract text available
    Text: DRAM MODULE 2 Mega Byte KMM536512BW/BWG Fast Page Mode 512Kx36 DRAM SIMM Using 256Kx18 DRAM, 5V GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM536512BW is a 512K bit x 36 Dynamic RAM high density memory module. The Samsung KMM536512BW consists of four CMOS


    OCR Scan     		KMM536512BW/BWG 512Kx36 256Kx18 KMM536512BW 40-pin 72-pin KMM536512BW-6 km418c256bj PDF

    1Mx9 DRAM 30-pin SIMM

    Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
    Text: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C


    OCR Scan     		1Mx32 1Mx33 1Mx36 1Mx40 2Mx32 2Mx36 1Mx9 DRAM 30-pin SIMM KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 4m dram 72-pin simm 32 DRAM 30-pin SIMM PDF

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL PDF