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    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G


    Original
    PDF L2SD1781KQLT1G L2SD1781KQLT1G S-L2SD1781KQLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB AEC-Q101 81KQLT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KXLT1G L2SD1781KXLT1G 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 1


    Original
    PDF L2SD1781KXLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB L2SD1781KQLT1G L2SD1781KQLT3G L2SD1781KRLT1G L2SD1781KRLT3G

    0440

    Abstract: L2SD1781KQLT1G L2SD1781KRLT1G marking AFR AFR marking transistor afr
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G


    Original
    PDF L2SD1781KQLT1G L2SD1781KQLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB L2SD1781KQLT3G L2SD1781KRLT1G L2SD1781KRLT3G 0440 L2SD1781KRLT1G marking AFR AFR marking transistor afr

    Untitled

    Abstract: No abstract text available
    Text: LRC LESHAN RADIO COMPANY,LTD. Medium Power Transistor 32V, 0.8A L2SD1781K*LT1 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197K*LT1 FStructure Epitaxial planar type


    Original
    PDF L2SD1781K 500mA L2SB1197K OT-23 /TO-236AB L2SD1781KQLT1 L2S1781KRLT1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G


    Original
    PDF L2SD1781KQLT1G L2SD1781KQLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB L2SD1781KQLT3G L2SD1781KRLT1G L2SD1781KRLT3G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KXLT1G L2SD1781KXLT1G 3 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 1


    Original
    PDF L2SD1781KXLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB L2SD1781KQLT1G L2SD1781KQLT3G L2SD1781KRLT1G L2SD1781KRLT3G

    transistor AFR

    Abstract: AFR, TRANSISTOR marking AFQ AFR MARKING SOT-23 marking 1039 AFR marking L2SD1781KRLT1G transistor 1039 L2SD1781KQLT1 L2SD1781KQLT1G
    Text: LRC LESHAN RADIO COMPANY,LTD. Medium Power Transistor 32V, 0.8A L2SD1781K*LT1 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197K*LT1 4) Pb Free Package is Available.


    Original
    PDF L2SD1781K 500mA L2SB1197K OT-23 /TO-236AB L2SD1781KQLT1 L2SD1781KQLT1G L2SD1781KRLT1 L2SD1781KRLT1G transistor AFR AFR, TRANSISTOR marking AFQ AFR MARKING SOT-23 marking 1039 AFR marking transistor 1039 L2SD1781KQLT1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor 32V, 0.8A L2SD1781KQLT1G L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G


    Original
    PDF L2SD1781KQLT1G L2SD1781KQLT1G S-L2SD1781KQLT1G 500mA L2SB1197KXLT1G OT-23 /TO-236AB AEC-Q101 81KQLT1G