LH5364000N Search Results

LH5364000N Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
LH5364000N		Sharp	EPROM Parallel Async		Original	PDF

LH5364000N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
44-PIN Abstract: LH5364000N A6527 Text: CMOS 64M 8M x 8/4M × 16 Mask-Programmable ROM LH5364000 FEATURES • 8,388,608 words × 8 bit organization (Byte mode) 4,194,304 words × 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 385 mW (MAX.) Standby: 550 µW (MAX.)	Original	PDF	LH5364000 44-PIN 44-pin, 600-mil LH5364000 64M-bit 44SOP LH5364000N A6527
Untitled Abstract: No abstract text available Text: LH5364000 FEATURES • 8,388,608 words Byte mode 4,194,304 words (Word mode) CMOS 64M (8M x 8/4M x 16) Mask-Programmable ROM PIN CONNECTIONS x 8 bit organization 44-PIN SOP x 16 bit organization • Access time: 150 ns (MAX.) • Power consumption: Operating: 385 mW (MAX.)	OCR Scan	PDF	LH5364000 44-PIN 44-pin, 600-mil LH5364000 64M-bit
536G Abstract: LH534600 Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)	OCR Scan	PDF	LH53259D/N/T LH53517D/N/T/TR LH531VOOD/N/TAJ LH53V1ROON/T LH530800AD/AN/AU LHS30800AD/AN-Y LH531OOOBD/BN LH531000BN-S LH531024D/N/U LH532100BD 536G LH534600
LH231G Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235 Text: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g\|g\|ï\|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200	OCR Scan	PDF	28DIP 28DIP LH2389D LH23128D LH23286D LH236120 LH2310006D LH231G lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
lh537 Abstract: 42DIP lh533200 LH535g Text: MEMORIES • Mask ROMs Process CMOS ★ U n d e r development MEMORIES ★ Under developm ent Configuration Process Capacity (wortsxbits Access time (ns) MAX. Model No. Pinout LH-538VXX 100 100 5 ± 10% 32DIP/32SOP/32TSOPÎII) Normal 120 60 5 ± 10% L H 5 3 8 3 0 0 C D /C W C S Æ S H	OCR Scan	PDF	LH-538VXX LH-5387XX LH-538NXX 32DIP/32SOP/32TSOP 32DIP/32SOP/ 32TSOP 42DIP/44SOP 48TSOP0) lh537 42DIP lh533200 LH535g
Untitled Abstract: No abstract text available Text: CMOS 64M 8M x 8/4M x 16 MROM FEATURES • 8,388,608 words x 8 bit organization (Byte mode) 4,194,304 words x 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 385 mW (MAX.) Standby: 550 \i\N (MAX.) • Static operation	OCR Scan	PDF	44-pin, 600-mil 44-PIN D15/A. 600-rnil LH5364000 OP044-P-0600)
Untitled Abstract: No abstract text available Text: CMOS 64M 8 M x 8/4 M x 16 MROM FEATURES 44-P IN SO P T O P V IE W s "N < EL • 8,388,608 words x 8 bit organization (Byte mode) 4,194,304 words x 16 bit organization (Word mode) PIN CONNECTIONS A -\|8 IZ 43 — I a 19 A 17IZ 3 42 ^ Ag • Access time: 150 ns (MAX.)	OCR Scan	PDF	44-pin, 600-mil LH5364000 64M-bit LH5364000 44SOP OP044-P-0600)