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    LN166 Search Results

    LN166 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LN166 Panasonic GaAs Infrared Light Emitting Diode Original PDF
    LN166 Unknown The Optical Devices Data Book (Japanese) Scan PDF
    LN166 Panasonic Light Emitting Diodes Scan PDF
    LN166 Panasonic Light Emitting Diodes LED Scan PDF
    LN166 Panasonic Light Emitting Diodes LED Scan PDF

    LN166 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LN166

    Abstract: LNA2904L
    Text: Infrared Light Emitting Diodes LNA2904L LN166 GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 Not soldered Features High-power output, high-efficiency : Ie = 10 mW/sr (min.) 1.0 For optical control systems Good radiant power output linearity with respect to input current


    Original
    LNA2904L LN166) 40nductor LN166 LNA2904L PDF

    LNA2904L

    Abstract: LN166
    Text: Infrared Light Emitting Diodes LNA2904L LN166 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 7.65±0.2 (1.0) 3.9±0.31 (1.0) 11.5±1.0 • High-power output, high-efficiency: Ie = 10 mW/sr (min.) • Emitted light spectrum suited for silicon photodetectors


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    LNA2904L LN166) LNA2904L LN166 PDF

    LNA2904L

    Abstract: LN166
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Infrared Light Emitting Diodes LNA2904L (LN166) GaAs Infrared Light Emitting Diode For optical control systems • Features  High-power output, high-efficiency: Ie = 10 mW/sr (min.)  Emitted light spectrum suited for silicon photodetectors


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    2002/95/EC) LNA2904L LN166) LNA2904L LN166 PDF

    Untitled

    Abstract: No abstract text available
    Text: Infrared Light Emitting Diodes LNA2904L LN166 GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 7.65±0.2 (1.0) 3.9±0.31 11.5±1.0 13.5±1.0 M Di ain sc te on na tin nc ue e/ d • High-power output, high-efficiency: Ie = 10 mW/sr (min.)


    Original
    LNA2904L LN166) PDF

    ln2054

    Abstract: 70H40 70H20A 70H30A 70H80 70H40A 5MO 165 lN3261 20M20 70Ma20
    Text: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number 10 Max A VRRM IFSM (V) (A) Silicon Rectifiers, 10 5 10 15 20 25 30 KG01420SX KG01421SX lN2789 KG01422SX OS35•08A OS35·02A OS35·04A 55HQ020 lN2128 lN2128A 50 50 50 50 51 52 52 60 60 60 ~~~~~~OSX ~g


    Original
    KG01420SX KG01421SX lN2789 KG01422SX 55HQ020 lN2128 lN2128A lN2129 lN2129A 20MA10 ln2054 70H40 70H20A 70H30A 70H80 70H40A 5MO 165 lN3261 20M20 70Ma20 PDF

    2003 iff

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN166 GaAs Infrared Light Emitting Diode U nit : mm 05 . 0+0.2 For optical control systems • Features i • H igh-pow er output, high-efficiency : Ie = 10 m W /sr min. • Light emitting spectrum suited for silicon photodetectors


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    LN166 100Hz 2003 iff PDF

    Infrared Emitting Diode

    Abstract: LN166
    Text: Panasonic Infrared Light Emitting Diodes LN166 GaAs Infrared Light Emitting Diode U nit : mm 05 . 0+0.2 For optical control systems • Features i • H igh-pow er output, high-efficiency : Ie = 10 m W /sr min. • Light emitting spectrum suited for silicon photodetectors


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    LN166 100Hz Infrared Emitting Diode LN166 PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN166 G aAs Infrared Light Emitting Diode 05.0+0.2 For optical control systems • Features • • • • • High-power output, high-efficiency : Ie = 10 mW /sr min. Light emitting spectrum suited for silicon photodetectors


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    LN166 100Hz PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Infrared Light Emitting Diodes LN166 G aAs Infrared Light Em itting Diode Unit : mm jj5.0±0._2 For o ptical control system s • Features • • • • • High-power output, high-efficiency : Ie = 10 mW /sr min. Light emitting spectrum suited for silicon photodetectors


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    LN166 100Hz 0102Q. PDF

    LNC703PS

    Abstract: LN9P01S P50024 LNA4401 PR0022 LN68
    Text: Light Emitting Diodes • Red Light Emitting Diodes for Control Appli­ cation Package Type No. No. 5 LN124W For control If Side view LNA4402F max (V) 40 1 2.6 680 30 PSF02-1 40 2.5 2.2 700 80 02-1 40 1.8 2.2 700 30 5 $ Plastic P5F02-1 LN145W Ap e typ typ


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    LN124W P5F02-1 PSF02-1 LN155 LN184 LN189L PR002-1 PR002-2 LNC703PS LN9P01S P50024 LNA4401 PR0022 LN68 PDF

    3866S

    Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
    Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series


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    1020G N12861 N12B62 MN1381 MN13811 MN13821 15P0802 15P5402 58851A 70803A 3866S transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515 PDF

    LT3SA

    Abstract: LN9705S LN143 LN7301F P700 LN122WF LN122WS LN124W LN145W P3002.2
    Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli­ cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1 40


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    LN143 LN122WS MR02-1 LN122WF MF02-1 LN124W LN145W P5F02-2 PSF02-1 LT3SA LN9705S LN7301F P700 P3002.2 PDF

    LN9705

    Abstract: LN143 LN122WF LN122WS LN124W LN145W C3021 MR02-1 mr02 LN9705S
    Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Pac kage Appli­ cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1


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    LN143 LN122WS MR02-1 LN122WF MF02-1 LN124W LN145W P5F02-2 PSF02-1 LN9705 C3021 mr02 LN9705S PDF

    PR002-2

    Abstract: mru2 PR0022
    Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli­ Type No. cation Po Ap Vf min. max. typ. (mA) (mW) t, ,tf typ. typ. (nm ) (deg.) (ns) If No. T O -18 (Sm all) LN143 For control LN122WS (V ) 40 MRÜ2-1 T O -18 (Sm all)


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    Plastic50 P5002-1 P5002-Ì P5002-1N P5002-2 P3002-1 P3002-2 P5002-4 PR002-2 mru2 PR0022 PDF

    B029A

    Abstract: UN039
    Text: Light Emittihg Diodes • Laser Modules ■ infrared Light Emitting Diodes incl. visible (for Fiber, Control) Applica­ tions Package If Type No. Vf max. AL typ. •L a s e r Module for Optical Communication Q tr.tl typ (ns) Type No. Package No. LN7301M005


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    LN7301M005 122WS LN122WF LN184 LN189L LN9860/P/PR LN189M LN189S LN671 LN51L B029A UN039 PDF

    Untitled

    Abstract: No abstract text available
    Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Po V F AL e tr.tf Appli­ Type No. Pac kage If min. max. typ. typ. typ. cation No. (mA) (mW) (V ) (nm) (deg.) (ns) For control For plastic fiber LN143 T0-18 (Small) MR02-1 40 4.5 2.2


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    LN143 LN122WS LN122WF LN124W LN145W T0-18 MR02-1 MF02-1 P5F02-2 PDF