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    lp1n08

    Abstract: N-Channel Enhancement-Mode Power Field-Effect transistor
    Text: S h a r r is January 1 9 9 4 R L P 1 N 0 8 L E Current Limited ESD Protected N-Channel Enhancement-Mode Power Field-Effect Transistor F e a tu re s Package • 1A, 80V T O -2 2 0 A B TOP VIEW • rDS ON = 0.75H • iLIM ITa* + 1 5 0 ° C . 1.5A Max


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    5E-10 32E-10 lp1n08 N-Channel Enhancement-Mode Power Field-Effect transistor PDF