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    LP7612P70

    Abstract: MIL-HDBK-263 MIL-STD-1686 LP7612 LPD7612P70 LPD7612P70-1 high power transistor s-parameters LP7612-P70
    Text: LP7612P70 PACKAGED HIGH DYNAMIC RANGE PHEMT • FEATURES ♦ 20 dBm Output Power at 1-dB Compression at 18 GHz ♦ 7.5 dB Power Gain at 18 GHz ♦ 16 dB Small Signal Gain at 2 GHz ♦ 0.8 dB Noise Figure at 2 GHz • DESCRIPTION AND APPLICATIONS The LP7612P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide


    Original     		LP7612P70 LP7612P70 LP7612 MIL-STD-1686 MIL-HDBK-263. MIL-HDBK-263 LPD7612P70 LPD7612P70-1 high power transistor s-parameters LP7612-P70 PDF