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Festo ADVULQ-80-15-P-A COMPACT CYLINDER
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DigiKey	ADVULQ-80-15-P-A	Bulk			1	1 $668.34 10 $668.34 100 $668.34 1000 $668.34 10000 $668.34	Buy Now
Festo ADVULQ-80-10-P-A COMPACT CYLINDER
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DigiKey	ADVULQ-80-10-P-A	Bulk			1	1 $656.39 10 $656.39 100 $656.39 1000 $656.39 10000 $656.39	Buy Now
Festo AEVULQ-80-10-P-A COMPACT CYLINDER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AEVULQ-80-10-P-A	Bulk			1	1 $656.39 10 $656.39 100 $656.39 1000 $656.39 10000 $656.39	Buy Now
Festo AEVULQ-80-15-P-A COMPACT CYLINDER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AEVULQ-80-15-P-A	Bulk			1	1 $668.34 10 $668.34 100 $668.34 1000 $668.34 10000 $668.34	Buy Now
Festo ADVULQ-80-15-A-P-A COMPACT CYLINDER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ADVULQ-80-15-A-P-A	Bulk			1	1 $668.34 10 $668.34 100 $668.34 1000 $668.34 10000 $668.34	Buy Now

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LQ801 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
LQ801		Polyfet RF Devices	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR		Original	PDF

LQ801 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
167D Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener Text: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100	Original	PDF	TB167D 30-512MHz 28Vdc LQ801 LB501A 28Vdc, 0R0J12AFX 167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener
LQ801 Abstract: No abstract text available Text: polyfet rf devices LQ801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE	Original	PDF	LQ801 LQ801
TB131 Abstract: TB-131 LQ801 f940 Text: TB131 LQ801 W Chart 1 TB131 POUT VS PIN F=940 MHZ; IDQ=0.6A; VDS=28V 40 16 35 15 Pout 30 14 13 20 Gain 12 15 Efficiency = 55% 11 10 10 5 9 0.5 1 1.5 2 PIN IN WATTS Page 1 2.5 3 3.5 4 GAIN IN DB POUT IN WATTS 25	Original	PDF	TB131 LQ801 TB-131 f940
LQ801 Abstract: No abstract text available Text: polyfet rf devices LQ801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.	Original	PDF	LQ801 LQ801
LQ801 Abstract: LDMOS PFS3010 Text: polyfet rf devices LQ801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.	Original	PDF	LQ801 LQ801 LDMOS PFS3010
Untitled Abstract: No abstract text available Text: polyfet rf devices LQ801 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE	Original	PDF	LQ801
TB219 Abstract: lq801 Text: August 17, 2012 TB219#3 Frequency=30-512MHz Pout=20W Gain=12dB Vds=28Vdc Idq=200mA Efficiency=35-40% LQ801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com August 17, 2012 25.0 50 22.5 45 20.0 40 17.5 35 15.0 30 12.5	Original	PDF	TB219 30-512MHz 28Vdc 200mA LQ801 28Vdc, 200mA, LQ801
TB208 Abstract: Ft50-43 FT-50-43 LQ801 bn-61-2402 BN612 BN-61-202 SR703 bn612402 10NF Text: 120 90 TB208 LQ801->SR703 Freq=20MHz Vds=28Vdc Idq=1.2A Pout/Gain vs. Pin Linear @46W 24.0 23.0 Pout P1dB=75W 60 22.0 Gain 30 0.000 140 21.0 0.100 0.200 0.300 0.400 0.500 0.600 P in in W a tts 0.700 0.800 0.900 TB208 LQ801->SR703 Freq=250MHz Vds=28Vdc Idq=1.2A	Original	PDF	TB208 LQ801-- SR703 20MHz 28Vdc 250MHz Ft50-43 FT-50-43 LQ801 bn-61-2402 BN612 BN-61-202 bn612402 10NF
LQ801 Abstract: SK202 SK2-02 TB-135 470MHZ 650MHZ amplifier 15w Text: POLYFET RF DEVICES ANALOG/DIGITAL BROADCAST TV BAND-5 AMPLIFIER TB-135 SK202->LQ801 F=470MHZ, VDS=28V, Idq=.6A 25 35 24 30 22 21 Pout 20 20 1dB compression = 15W 15 19 Gain 10 GAIN IN DB POUT IN WATTS 23 25 18 Efficiency = 23% 17 5 16 15 0.2 0.4 0.6 0.8 1	Original	PDF	TB-135 SK202-- LQ801 470MHZ, 650MHZ, SK202 SK2-02 470MHZ 650MHZ amplifier 15w
166A Abstract: TB166A LQ801 FT50A-43 LB401 10nF R20 10K ohm TB166 C33-C38 30MHz to 512MHz Text: Polyfet RF Devices TB-166A LQ801-> LB401 Gain/Efficiency vs Freq; Vds=28Vdc Idq=1.2A 30 100 27 90 24 80 Gain 21 70 15 Pout fixed at 60W 60 Efficiency 12 50 9 40 6 30 3 40 80 120 160 200 240 280 Freq in MHz 320 360 400 440 480 20 520 Eff in % Gain in dB 18	Original	PDF	TB-166A LQ801---> LB401 28Vdc 30MHz 166A TB166A LQ801 FT50A-43 10nF R20 10K ohm TB166 C33-C38 30MHz to 512MHz
LQ801 Abstract: 28v 30MHZ LB501 TB-167D Text: TB-167D LQ801-> LB501 Gain/Efficiency vs Freq; Vds=28Vdc Idq=1.2A 35 100 32 90 28 80 Gain 25 70 Pout fixed at 100W 60 Efficiency 18 50 14 40 11 30 7 20 4 10 20 70 120 170 220 270 Freq in MHz 320 370 420 470 520 Eff in % Gain in dB 21 TB-167D LQ801-> LB501 Pout/Gain vs Pin Freq=30MHz Vds=28Vdc Idq=1.2A	Original	PDF	TB-167D LQ801---> LB501 28Vdc 30MHz LQ801 28v 30MHZ
TB214 Abstract: bn-61-2402 BN-61-202 ft37-61 LQ801 bn612402 FT-37-61 bn61-202 P123 FB43101 Text: 2 1 +28V C3 10n R1 3.9k C8 10u D1 B B P1 POT L1 22AWG, 9x through FT-37-61 R2 3.9k C1 100n C4 10n T1 22AWG, 9x through FT-37-61 R4 100 T2a RF in L2 COAX C5 100n T3 M1 RF out COAX COAX C2 100n COAX R3 180 COAX COAX C6 100n COAX COAX M2 C7 10n T2b A A R5 100	Original	PDF	22AWG, FT-37-61 FB-43-101 BN-61-2402 TB214, LQ801, 20MHz-1000MHz, TB214 bn-61-2402 BN-61-202 ft37-61 LQ801 bn612402 FT-37-61 bn61-202 P123 FB43101
UT34-25 Abstract: LQ801 TB151 01UF 33PF Text: TB-151Gain & Efficiency Flatness;Vds=28Vdc Idq=200ma 32 70 Efficiency 60 28 50 24 40 Pout fixed at 30W 30 20 Gain 20 16 10 12 800 820 840 860 880 900 920 940 960 Freq in MHz TB-151 Pin vs Pout Freq=800Mhz;Vds=28Vdc Idq=200ma 45 16 Linear @ 15W 40 15 35 14	Original	PDF	TB-151Gain 28Vdc 200ma TB-151 800Mhz 880Mhz UT34-25 LQ801 TB151 01UF 33PF
LQ30-254V Abstract: LQ60-202V LQ30-105V LQ80-104Y LQ40-504V LQ100-103V LQ30-105Y LQ80-104V LQ101 LQ80-503Y Text: TYPE HIGH VOLTAGE FILTER CAPACITORS 65ºC PHENOLIC CAP - PLASTIC FILM DC FILTER [Products \| Terms & Conditions \| Sales Reps \| Tech. Bulletins] [Links \| E-Mail \| Home] The data contained herein shows only a PARTIAL LISTING of items available for this product line and it gives	Original	PDF	LQ60-503Y LQ80-104Y LQ100-503Y LQ60-104Y LQ80-254Y LQ100-104Y LQ60-254Y LQ120-102Y LQ120-202Y LQ120-502Y LQ30-254V LQ60-202V LQ30-105V LQ80-104Y LQ40-504V LQ100-103V LQ30-105Y LQ80-104V LQ101 LQ80-503Y

MGCF21 Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount	Original	PDF	L8821P LB421 L8821P LP721 SM341 LQ821 SQ701 SR401 MGCF21 LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
TB215 Abstract: bn432402 Text: 2 1 +28 V C5 10uF R3 3.9k C4 10nF C8 10nF D1 5.6V D2 5.6V P1 10k B C11 10uF L6 D3 5.6V P3 10k P2 10k C23 10uF R10 3.9k C18 10nF R5 1k B L7 L5 L3 R4 150 R8 150 C7 100nF T1 COAX SP201 C3 100nF COAX R6 9.1k C6 10nF R13 100 L4 C12 10nF C9 100nF C13 100nF COAX	Original	PDF	100nF SP201 SQ201 TB215 bn432402
FT-37-43 Abstract: bn-61-2402 BN-43-2402 FT37-43 BN-61-202 bn612402 bn432402 FT-37-61 LQ801 SP201 Text: 2 1 +28 V C5 10uF R3 3.9k C4 10nF C8 10nF D1 5.6V D2 5.6V P1 10k B C11 10uF L6 D3 5.6V P3 10k P2 10k C23 10uF R10 3.9k C18 10nF R5 1k B L7 L5 L3 R4 150 R8 150 C7 100nF T1 COAX SP201 C3 100nF COAX R6 9.1k C6 10nF R13 100 L4 C12 10nF C9 100nF C13 100nF COAX	Original	PDF	100nF SP201 SQ201 FT-37-43 bn-61-2402 BN-43-2402 FT37-43 BN-61-202 bn612402 bn432402 FT-37-61 LQ801 SP201
rf push pull mosfet power amplifier Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941 Text: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30	Original	PDF	200NUM1 SQ221 LK822 LK722 LX521 rf push pull mosfet power amplifier 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941