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    LS12L Search Results

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    LS12L Price and Stock

    C&K KLS12L063AQ

    L CONCAVE, SPDT, PCB, MOM, GREEN
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    DigiKey KLS12L063AQ Tray 8 1
    • 1 $14.72
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    Mouser Electronics KLS12L063AQ
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    Newark KLS12L063AQ Bulk 63 1
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    TME KLS12L063AQ 140 1
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    C&K KLS12L063EQ

    L CONCAVE, SPDT, PCB, LOCK, GREE
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    DigiKey KLS12L063EQ Tray 4 1
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    Mouser Electronics KLS12L063EQ
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    Newark KLS12L063EQ Bulk 128 1
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    TME KLS12L063EQ 68 1
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    ITT Interconnect Solutions NLDFT-2-R-L-S120-M40A

    Heavy Duty Power Connectors Line Drain Ln 2 Red USA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics NLDFT-2-R-L-S120-M40A
    • 1 $116.08
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    C&K KLS12L0RRAQ

    Pushbutton Switches
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    Mouser Electronics KLS12L0RRAQ
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    Newark KLS12L0RRAQ Bulk 140
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    C&K KLS12L0RREQ

    Pushbutton |C&k Components KLS12L0RREQ
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    Newark KLS12L0RREQ Bulk 140
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    LS12L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    murata 897 Mhz

    Abstract: SKY65045-70LF HK160810NJ-T S670 m5 sot89 SOT89 sk45 making S244 SK45 srf transistor GRM39C0G100J050AD
    Text: data sheet SKY65045-70LF: 390–1500 MHz Low Noise Power Amplifier Driver Block Diagram Applications l l l l l l l U  HF television T ETRA radio G  SM, AMPS, PCS, DCS, 2.5G, 3G ISM band transmitters F ixed WCS 8 02.16 WiMAX 3 GPP long term evolution


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    PDF SKY65045-70LF: OT-89 J-STD-0-20) SKY65045-70LF murata 897 Mhz HK160810NJ-T S670 m5 sot89 SOT89 sk45 making S244 SK45 srf transistor GRM39C0G100J050AD

    80021

    Abstract: SGC-6386Z
    Text: Preliminary Information SGC-6386Z Product Description Sirenza Microdevices’ SGC-6386Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process


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    PDF SGC-6386Z SGC-6386Z EDS-104746 80021

    Untitled

    Abstract: No abstract text available
    Text: SD57045-01 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M250 epoxy sealed ORDER CODE SD57045-01


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    PDF SD57045-01 SD57045-01

    70808

    Abstract: 82645 56260 0117 0317 HWL26NPA 104780 107867 lS12l GaAs FET sot89 78045
    Text: HWL26NPA L-Band GaAs POWER FET Autumn 2002 V1 Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Applications • High Efficiency • 3V to 6V Operation Outline Dimensions 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description


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    PDF HWL26NPA HWL26NPA 70808 82645 56260 0117 0317 104780 107867 lS12l GaAs FET sot89 78045

    74910

    Abstract: 177307 39068
    Text:  L-Band Power GaAs FET  Description Outline Dimensions                   ! "  ##$ %& ' & #&$  $%&% %#%*' Features •    


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    PDF Co-118 74910 177307 39068

    36568

    Abstract: No abstract text available
    Text:  L-Band Power GaAs FET  Description Outline Dimensions                  !!" #$ %  &$  !$"' "#$# #!# % Features •    


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    PDF Sca732 36568

    Untitled

    Abstract: No abstract text available
    Text: HWL34YRA 1234567849A7BCDEF7 7 Autumn 2002 V1 Outline Dimensions Features • Low Cost GaAs Power FET • Class A or Class AB Operation • 14.5 dB Typical Gain at 2.4GHz • 5V to 10V Operation Description The HWL34YRA is a Power GaAs FET designed for various L-band & S-band applications.


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    PDF HWL34YRA 1234567849A7BCDEF7 HWL34YRA moun700

    Untitled

    Abstract: No abstract text available
    Text: HWL30YRA 1234567849A7BCDEF7 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • Typical 16.5 dB Gain • 5V to 10V Operation Description The HWL30YRA is a Medium Power GaAs FET designed for various L-band & S-band applications.


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    PDF HWL30YRA 1234567849A7BCDEF7 HWL30YRA

    Untitled

    Abstract: No abstract text available
    Text: HWC34NC 123456789ABC7DEF7 952 47 9B71 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 8.5 dB Typical Gain at 4 GHz • 5V to 10V Operation 1525.0 9 1392.5 1235.0 1 5 1077.5 10 Description 920.0


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    PDF HWC34NC 123456789ABC7DEF7 HWC34NC TST231

    SD57045

    Abstract: 945 TRANSISTOR 700B M243
    Text: SD57045 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M243 epoxy sealed DESCRIPTION The SD57045 is a common source N-Channel


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    PDF SD57045 SD57045 945 TRANSISTOR 700B M243

    Untitled

    Abstract: No abstract text available
    Text: SD57045  RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • ■ ■ ■ EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 45 W PEP with 13 dB gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION The SD57045 is a common source N-Channel


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    PDF SD57045 SD57045 TSD57045

    GRM1555C1H2R2JZ35E

    Abstract: GJM1555C1H5R6CB01E GRM1555C1H4R7JZ35E GJM1555C1H120JB01E
    Text: AMPLIFIERS PRELIMINARY DATA SHEET SKY65111-348LF: ISM 600–1100 MHz Band 2 Watt InGaP HBT Power Amplifier Features Block Diagram Optimized for 800–1100 MHz operation ● Output power greater than 33 dBm @915 MHz ● 3.5 V nominal operating voltage ● Integrated analog power control voltage, V


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    PDF SKY65111-348LF: SKY65111-348LF GRM1555C1H2R2JZ35E GJM1555C1H5R6CB01E GRM1555C1H4R7JZ35E GJM1555C1H120JB01E

    Untitled

    Abstract: No abstract text available
    Text: HWL30NPA L-Band GaAs Power FET Autumn 2002 V1 Features • Low Cost GaAs Power FETs • Class A or Class AB Operation • High Efficiency • 3V to 6V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description 2 1 3 The HWL30NPA is a Medium Power GaAs FET using


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    PDF HWL30NPA HWL30NPA

    Untitled

    Abstract: No abstract text available
    Text: HWC27NC 123456789ABC7DEF7 952 47 9B71 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 11 dB Typical Gain at 4 GHz • 5V to 10V Operation 650 Source Description 435 1 215 2 3 The HWC27NC is a medium power GaAs FET


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    PDF HWC27NC 123456789ABC7DEF7 HWC27NC

    Untitled

    Abstract: No abstract text available
    Text: HWL26NPA 1234567849A7BCDEF7 E 7 Autumn 2002 V1 Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Applications • High Efficiency • 3V to 6V Operation Outline Dimensions 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description1


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    PDF HWL26NPA 1234567849A7BCDEF7 HWL26NPA

    0951 v1.02

    Abstract: No abstract text available
    Text: HWL36YRA 1234567849A7BCDEF7 7 Autumn 2002 V1 Outline Dimensions Features • Low Cost GaAs Power FET • Class A or Class AB Operation • Greater than 13 dB Gain • 5V to 10V Operation Description The HWL36YRA is a Power GaAs FET designed for various L-band & S-band applications.


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    PDF HWL36YRA 1234567849A7BCDEF7 HWL36YRA 0951 v1.02

    Untitled

    Abstract: No abstract text available
    Text: HWL30YRF 1234567849A7BCDEF7 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • Typical 16.5 dB Gain • 5V to 10V Operation Description The HWL30YRF is a Medium Power GaAs FET designed for various L-band & S-band


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    PDF HWL30YRF 1234567849A7BCDEF7 HWL30YRF

    Untitled

    Abstract: No abstract text available
    Text: HWL27NC 123456789ABC7DEF7 47 9 B7 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 17 dB Typical Gain at 2.4 GHz • 5V to 10V Operation 650 Source Description 435 1 215 2 3 The HWL27NC is a medium power GaAs FET


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    PDF HWL27NC 123456789ABC7DEF7 HWL27NC

    Untitled

    Abstract: No abstract text available
    Text: HWL26NPB 1234567849A7BCDEF7 7 Autumn 2002 V1 Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Outline Dimensions Applications • High Efficiency • 3V to 6V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description


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    PDF HWL26NPB 1234567849A7BCDEF7 HWL26NPB OT-23)

    3904 0346

    Abstract: No abstract text available
    Text:  L-Band Medium Power GaAs MESFET  Outline Dimensions Description          !  "#  $%  !  &'  %!#   *+( )!!!, ! !  &


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    PDF

    0734

    Abstract: No abstract text available
    Text:  L-Band Power GaAs MESFET  Description Outline Dimensions           !"    # " "$   " #  # !   %& # " '     # !   *+ ,-. /*+


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    PDF

    transistor d 945

    Abstract: 670 OHM RESISTOR 945 TRANSISTOR Wire wound resistor 5W 700B M243 SD57045
    Text: SD57045 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M243 epoxy sealed DESCRIPTION The SD57045 is a common source N-Channel enhancement-mode lateral Field-Effect RF power


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    PDF SD57045 SD57045 transistor d 945 670 OHM RESISTOR 945 TRANSISTOR Wire wound resistor 5W 700B M243

    SD57045

    Abstract: 670 OHM RESISTOR 945 TRANSISTOR 700B M250 SD57045-01 945 tran
    Text: SD57045-01 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M250 epoxy sealed ORDER CODE SD57045-01


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    PDF SD57045-01 SD57045-01 SD57045 670 OHM RESISTOR 945 TRANSISTOR 700B M250 945 tran

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan
    PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor