ID84
Abstract: 260uH LZP80N06P
Text: LZP80N06P N-Channel 60V Power MOSFET Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di/dt Capability • Improved Gate Charge BVDSS=60V , • Wide Expanded Safe Operating Area RDS ON =0.014Ω, Application ID=84 A • DC Tools
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LZP80N06P
above25
to175
ID84
260uH
LZP80N06P
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liteon SMPS circuit
Abstract: lzp80n06
Text: LITE ON LITE-ON SEMICONDUCTOR LZP80N06 Features • • • • • Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Wide Expanded Safe Operating Area TO-220 GDS Application • • • • D UPS Car Inverter
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LZP80N06
O-220
liteon SMPS circuit
lzp80n06
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Untitled
Abstract: No abstract text available
Text: LITE ON LITE-ON SEMICONDUCTOR LZP80N06 Features • • • • • Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Wide Expanded Safe Operating Area TO-220 GDS Application • • • • D UPS Car Inverter
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Original
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LZP80N06
O-220
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PDF
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smps inverter circuit
Abstract: e-bike 48v dc smps 48V SMPS 48V SMPS circuit 20V n-Channel Power MOSFET inverter 12 V to 220 V car inverter liteon SMPS circuit
Text: LITE ON LITE-ON SEMICONDUCTOR LZP80N06 Features • • • • • Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Wide Expanded Safe Operating Area TO-220 GDS Application • • • • D UPS Car Inverter
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Original
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LZP80N06
O-220
smps inverter circuit
e-bike
48v dc smps
48V SMPS
48V SMPS circuit
20V n-Channel Power MOSFET
inverter 12 V to 220 V
car inverter
liteon SMPS circuit
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PDF
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