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    ID84

    Abstract: 260uH LZP80N06P
    Text: LZP80N06P N-Channel 60V Power MOSFET Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di/dt Capability • Improved Gate Charge BVDSS=60V , • Wide Expanded Safe Operating Area RDS ON =0.014Ω, Application ID=84 A • DC Tools


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    LZP80N06P above25 to175 ID84 260uH LZP80N06P PDF

    liteon SMPS circuit

    Abstract: lzp80n06
    Text: LITE ON LITE-ON SEMICONDUCTOR LZP80N06 Features • • • • • Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Wide Expanded Safe Operating Area TO-220 GDS Application • • • • D UPS Car Inverter


    Original
    LZP80N06 O-220 liteon SMPS circuit lzp80n06 PDF

    Untitled

    Abstract: No abstract text available
    Text: LITE ON LITE-ON SEMICONDUCTOR LZP80N06 Features • • • • • Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Wide Expanded Safe Operating Area TO-220 GDS Application • • • • D UPS Car Inverter


    Original
    LZP80N06 O-220 PDF

    smps inverter circuit

    Abstract: e-bike 48v dc smps 48V SMPS 48V SMPS circuit 20V n-Channel Power MOSFET inverter 12 V to 220 V car inverter liteon SMPS circuit
    Text: LITE ON LITE-ON SEMICONDUCTOR LZP80N06 Features • • • • • Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Wide Expanded Safe Operating Area TO-220 GDS Application • • • • D UPS Car Inverter


    Original
    LZP80N06 O-220 smps inverter circuit e-bike 48v dc smps 48V SMPS 48V SMPS circuit 20V n-Channel Power MOSFET inverter 12 V to 220 V car inverter liteon SMPS circuit PDF