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    M100GB12 Search Results

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    M100GB12 Price and Stock

    Infineon Technologies AG BSM100GB120DN2HOSA1

    IGBT MOD 1200V 150A 800W
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    DigiKey BSM100GB120DN2HOSA1 Tray
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    Rochester Electronics BSM100GB120DN2HOSA1 3,276 1
    • 1 $220.56
    • 10 $220.56
    • 100 $207.33
    • 1000 $187.48
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    Rochester Electronics LLC BSM100GB120DN2HOSA1

    MEDIUM POWER 62MM
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    DigiKey BSM100GB120DN2HOSA1 Bulk 2
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    Rochester Electronics LLC BSM100GB120DLCHOSA1

    BSM100GB120 - INSULATED GATE BIP
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    DigiKey BSM100GB120DLCHOSA1 Bulk 2
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    Infineon Technologies AG BSM100GB120DLCHOSA1

    IGBT MOD 1200V 100A 830W
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    Rochester Electronics BSM100GB120DLCHOSA1 414 1
    • 1 $210.44
    • 10 $210.44
    • 100 $197.81
    • 1000 $178.87
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    Infineon Technologies AG BSM100GB120DLCKHOSA1

    IGBT MOD 1200V 100A 830W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BSM100GB120DLCKHOSA1 Tray
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    M100GB12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: s e M IKRO n Absolute Maximum Ratings Conditions ' Values VcES VcGR lc = 20 k£2 Tcase = 25/80 °C ICM Tcase = 25/80 °C; tp 1200 1200 1 0 0 /9 0 2 0 0 /1 8 0 ±20 690 150 125 2 500 Symbol Units Rge = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode


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    Semitrans M SKD 100 GAL

    Abstract: b6u 500 semikron SKD100 GAL 16 v 8 D DIP SKM 75 GAL 123 IGBT
    Text: s e MIKRO n Absolute Maximum Ratings Symbol VcES VcGR lc ICM V ges Ptot Tj, Tag Visol humidity climate Diodes 9) If IfM= - ICM Ifsm l2t Values Conditions ' Units Rge = 20 kQ Tease = 25/80 °C Tease = 25/80 °C; tp = 1 ms per IGBT/D1/D8, Tcase=25 °C AC, 1 min.


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    PDF m100gb12 xls-24 Semitrans M SKD 100 GAL b6u 500 semikron SKD100 GAL 16 v 8 D DIP SKM 75 GAL 123 IGBT