Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the µPD44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS
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Original
|
PD44165082,
18M-BIT
PD44165082
152-word
PD44165182
576-word
18-bit
PD44165362
288-word
36-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the µPD44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full
|
Original
|
PD44165082,
18M-BIT
PD44165082
152-word
PD44165182
576-word
18-bit
PD44165362
288-word
36-bit
|
PDF
|
NI20U-M30-VP4X
Abstract: NI20U-M30-AP6X ni20-m30-vp4x-h1141 M15824
Text: Housing Style 30 mm - Nonembeddable, eurofast Connection 30 mm - Nonembeddable, eurofast Connection, Teflon Coated Part Number ID Number Features Ni15-M30-AD4X-H1141 Ni20-M30-AD4X-H1141 Ni20-M30-AD4X-H1144 T4417700 T4466141 T4466192 Ni15-M30-AN6X-H1141
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Original
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T4417700
T4466141
T4466192
T4617800
T4670599
M4653435
T4670515
M1646350
M1646191
M1646150
NI20U-M30-VP4X
NI20U-M30-AP6X
ni20-m30-vp4x-h1141
M15824
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PDF
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uPD44165082F5-E75-EQ1
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the µPD44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS
|
Original
|
PD44165082,
18M-BIT
PD44165082
152-word
PD44165182
576-word
18-bit
PD44165362
288-word
36-bit
uPD44165082F5-E75-EQ1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the µPD44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS
|
Original
|
PD44165082,
18M-BIT
PD44165082
152-word
PD44165182
576-word
18-bit
PD44165362
288-word
36-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the µPD44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS
|
Original
|
PD44165082,
18M-BIT
PD44165082
152-word
PD44165182
576-word
18-bit
PD44165362
288-word
36-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the µPD44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full
|
Original
|
PD44165082,
18M-BIT
PD44165082
152-word
PD44165182
576-word
18-bit
PD44165362
288-word
36-bit
|
PDF
|
PD44165362
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The μPD44165082 is a 2,097,152-word by 8-bit, the μPD44165182 is a 1,048,576-word by 18-bit and the μPD44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS
|
Original
|
PD44165082,
18M-BIT
PD44165082
152-word
PD44165182
576-word
18-bit
PD44165362
288-word
36-bit
|
PDF
|
E75 200
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT CMOS SYNCHRONOUS FAST SRAM QUAD DATA RATE 2-WORD BURST OPERATION Description The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the µPD44165362
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Original
|
PD44165082,
18M-BIT
PD44165082
152-word
PD44165182
576-word
18-bit
PD44165362
288-word
36-bit
E75 200
|
PDF
|
