Untitled
Abstract: No abstract text available
Text: RFHA1101D Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB
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Original
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RFHA1101D
10GHz
14GHz
DS110630
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PDF
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Untitled
Abstract: No abstract text available
Text: RFHA1101D 4.3W GaN ON SiC POWER AMPLIFIER DIE Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB • Drain Efficiency 60% at P3dB
|
Original
|
RFHA1101D
10GHz
14GHz
DS110630
|
PDF
|
M1DGAN202
Abstract: No abstract text available
Text: RFHA1101D 4.3W GaN ON SiC POWER AMPLIFIER DIE Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB • Drain Efficiency 60% at P3dB
|
Original
|
RFHA1101D
10GHz
14GHz
RFHA1101D
DS110630
M1DGAN202
|
PDF
|