K4H2G0638M
Abstract: No abstract text available
Text: 4GB Registered DIMM DDR SDRAM DDR SDRAM Registered Module TSOP-II 184pin Registered Module based on 1Gb M-die with 1,200mil Height & 72-bit ECC Revision 0.4 April, 2004 Rev. 0.4 April. 2004 4GB Registered DIMM DDR SDRAM Revision History Revision 0.0 (Mar, 2003)
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Original
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184pin
200mil
72-bit
DDR266
120ns.
M312L5128MT0-CA2/B0
512Mx4
K4H2G0638M
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PDF
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M312L5623MTS
Abstract: TSOP 173 g M312L5620MTS-CB3 m312l5623mts-cb3
Text: 2GB TSOP Registered DIMM Preliminary DDR SDRAM DDR SDRAM Registered Module TSOP-II 184pin Registered Module based on 1Gb M-die with 1,200mil Height & 72-bit ECC Revision 0.0 February 2004 Revison 0.0 February, 2004 2GB TSOP Registered DIMM Preliminary
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Original
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184pin
200mil
72-bit
M312L5620MTS-CB3/A2/B0
M312L5623MTS-CB3/A2/B0
256Mx4(
K4H1G0438M)
128Mx8(
K4H1G0838M)
M312L5623MTS
TSOP 173 g
M312L5620MTS-CB3
m312l5623mts-cb3
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PDF
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K4H2G0638A-UCCC
Abstract: No abstract text available
Text: 2GB, 4GB Registered DIMM DDR SDRAM DDR SDRAM Registered Module 184pin Registered Module based on 1Gb A-die with 72-bit ECC 66 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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Original
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184pin
72-bit
512Mx4
66TSOPII
K4H2G0638A-UCCC
K4H2G0638A-UCCC
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PDF
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K4H2G0638M
Abstract: DDR266 DDR333 M312L5623 M312L5128MT0-CA2
Text: 4GB Registered DIMM DDR SDRAM DDR SDRAM Registered Module TSOP-II 184pin Registered Module based on 1Gb M-die with 1,200mil Height & 72-bit ECC Revision 0.4 April, 2004 Rev. 0.4 April. 2004 4GB Registered DIMM DDR SDRAM Revision History Revision 0.0 (Mar, 2003)
|
Original
|
184pin
200mil
72-bit
DDR266
120ns.
DDR333
512Mx4
K4H2G0638M
M312L5623
M312L5128MT0-CA2
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PDF
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