Untitled
Abstract: No abstract text available
Text: BAS40-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount
|
Original
|
BAS40-04LT1
|
PDF
|
marking 04L sot23
Abstract: sot23 04l BAS40-04L BAS40-04LT1 04L sot23 marking 04L to236AB marking cb bas40
Text: BAS40-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount
|
Original
|
BAS40-04LT1
marking 04L sot23
sot23 04l
BAS40-04L
BAS40-04LT1
04L sot23
marking 04L to236AB
marking cb bas40
|
PDF
|
marking L2 package SOT
Abstract: BAS40 BAS40-04 BAS40-05 BAS40-06 sot-23 Marking B1 marking CB sot-23
Text: BAS40/BAS40-04 BAS40-05/BAS40-06 Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 200m AMPERES 40 VOLTS Features: *Extremely Fast Switching Speed *Low Forward Voltage *Very Small Conduction Losses *Schottky Barrier Diodes Encapsulated in a SOT-23 Package
|
Original
|
BAS40/BAS40-04
BAS40-05/BAS40-06
OT-23
OT-23
BAS40
BAS40-05
BAS40-06
BAS40-04
marking L2 package SOT
BAS40
BAS40-04
BAS40-05
BAS40-06
sot-23 Marking B1
marking CB sot-23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BAS40/BAS40-04 BAS40-05/BAS40-06 Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 200m AMPERES 40 VOLTS Features: * Low forward current * Guard ring protected * Low diode capacitance. Applications: 3 * Ultra high-speed switching * Voltage clamping
|
Original
|
BAS40/BAS40-04
BAS40-05/BAS40-06
OT-23
OT-23
10KHz
06-May-2011
|
PDF
|
SOt123 Package
Abstract: On semiconductor date Code sot-123 SOT-123
Text: BAS40−04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount
|
Original
|
BAS40-04LT1
BAS40-04LT1/D
SOt123 Package
On semiconductor date Code sot-123
SOT-123
|
PDF
|
BAS40-04L
Abstract: BAS40-04LT1 DIODE marking 04l T1G PACKAGE 04L sot23
Text: BAS40-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount
|
Original
|
BAS40-04LT1
BAS40-04L
BAS40-04LT1
DIODE marking 04l
T1G PACKAGE
04L sot23
|
PDF
|
BAS40-04LT1G
Abstract: BAS40 Schottky Barrier Diodes
Text: BAS40-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where
|
Original
|
BAS40-04LT1G
BAS40-04LT1/D
BAS40-04LT1G
BAS40
Schottky Barrier Diodes
|
PDF
|
On semiconductor date Code sot-123
Abstract: SOT-123 SOT123 BAS40-04LT1G 04LT1 BAS40 sot 123
Text: BAS40−04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount
|
Original
|
BAS40-04LT1
BAS40-04LT1/D
On semiconductor date Code sot-123
SOT-123
SOT123
BAS40-04LT1G
04LT1
BAS40
sot 123
|
PDF
|
SBAS40-04LT1G
Abstract: 04LT
Text: BAS40-04LT1G, SBAS40-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount
|
Original
|
BAS40-04LT1G,
SBAS40-04LT1G
OT-23
O-236)
BAS40-04LT1/D
04LT
|
PDF
|
04LT1
Abstract: BAS40 BAS40-04L marking 04L sot23
Text: BAS40−04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount
|
Original
|
BAS40-04LT1
BAS40-04L
04LT1
BAS40
marking 04L sot23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LBAS40LT1G Series Features 3 Low forward current Guard ring protected Low diode capacitance. 1 2 APPLICATIONS SOT- 23 Ultra high-speed switching Voltage clamping Protection circuits. 1 Anode Blocking diodes.
|
Original
|
LBAS40LT1G
BAS40
LBAS40LT3G
LBAS40-05LT1G
LBAS40-05LT3G
LBAS40LT1G
OT-23
|
PDF
|
BAS40
Abstract: BAS40-04
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LBAS40LT1G Series Features 3 Low forward current Guard ring protected Low diode capacitance. 1 2 APPLICATIONS SOT- 23 Ultra high-speed switching Voltage clamping Protection circuits. 1 Anode Blocking diodes.
|
Original
|
LBAS40LT1G
BAS40
LBAS40LT3G
LBAS40-05LT1G
LBAS40-05LT3G
LBAS40LT1G
OT-23
BAS40-04
|
PDF
|
BAS40
Abstract: BAS40-04
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LBAS40XLT1G Features 3 Low forward current Guard ring protected Low diode capacitance. 1 2 APPLICATIONS SOT- 23 Ultra high-speed switching Voltage clamping Protection circuits. 1 Anode Blocking diodes. 3 Cathode
|
Original
|
LBAS40XLT1G
BAS40
LBAS40LT1G
LBAS40LT3G
LBAS40-05LT1G
LBAS40-05LT3G
LBAS40-06LT1n
OT-23
BAS40-04
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current Guard ring protected LBAS40LT1G Series S-LBAS40LT1G Series Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
|
Original
|
LBAS40LT1G
S-LBAS40LT1G
AEC-Q101
BAS40
LBAS40LT3G
LBAS40LT1G
S-LBAS40LT1G
OT-23
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
|
Original
|
AEC-Q101
LBAS40LT1G
S-LBAS40LT1G
BAS40
LBAS40LT3G
S-LBAS40L
LBAS40LT1G
S-LBAS40LT1G
|
PDF
|
SOT-23
Abstract: BAS40-04
Text: Formosa MS BAS40 / BAS40-04 / BAS40-05 / BAS40-06 SMD Small Signal Schottky Diode List List. 1 Package outline. 2
|
Original
|
BAS40
BAS40-04
BAS40-05
BAS40-06
MIL-STD-750D
METHOD-1036
JESD22-A102
METHOD-1051
SOT-23
|
PDF
|
diode list
Abstract: smd diode schottky code marking l2
Text: Formosa MS BAS40 / BAS40-04 / BAS40-05 / BAS40-06 SMD Small Signal Schottky Diode List List. 1 Package outline. 2
|
Original
|
BAS40
BAS40-04
BAS40-05
BAS40-06
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
diode list
smd diode schottky code marking l2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Formosa MS BAS40 / BAS40-04 / BAS40-05 / BAS40-06 SMD Small Signal Schottky Diode List List. 1 Package outline. 2
|
Original
|
BAS40
BAS40-04
BAS40-05
BAS40-06
SD22-A102
MIL-STD-750D
METHOD-1051
METHOD-1056
1000hrs.
|
PDF
|
BAS40
Abstract: BAS40-04 BAS40-05 BAS40-06
Text: Formosa MS SMD Small Signal Schottky Barrier Diode BAS40 / 04 / 05 / 06 List List. 1 Package outline. 2
|
Original
|
BAS40
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
1000hrs.
METHOD-1038
BAS40-04
BAS40-05
BAS40-06
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current Guard ring protected Low diode capacitance. LBAS40XLT1G 3 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. Blocking diodes. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for
|
Original
|
LBAS40XLT1G
LBAS40LT1G
LBAS40LT3G
LBAS40-04LT1G
LBAS40-04LT3G
LBAS40-05LT1G
LBAS40-05LT3G
LBAS40-06LT1G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DOUBLE DIODE LBAS40*LT1G 3 1 Features 2 Low forward current Guard ring protected Low diode capacitance. SOT- 23 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. Blocking diodes. DESCRIPTION
|
Original
|
LBAS40
BAS40
BAS40-05
BAS40-04
BAS40-06
LBAS40
LBAS40LT1e
|
PDF
|
LBAS40-06LT1
Abstract: BAS40 BAS40-04 BAS40-05 BAS40-06 LBAS40-04LT1 LBAS40-05LT1 LBAS40LT1
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DOUBLE DIODE LBAS40*LT1 3 1 Features 2 Low forward current Guard ring protected Low diode capacitance. SOT- 23 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. Blocking diodes. DESCRIPTION
|
Original
|
LBAS40
BAS40
BAS40-05
BAS40-04
BAS40-06
LBAS40
OT-23
LBAS40-06LT1
LBAS40-04LT1
LBAS40-05LT1
LBAS40LT1
|
PDF
|
Siemens pulse sequence
Abstract: power supply siemens s5 Siemens diode Ssi
Text: SIEMENS mmmmmmwm•■tWhP CGY 191 GaAs MMIC • • • • • Dual mode power amplifier for CDMA /TDMA portable cellular phones 29 dBm linear output power PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control Input matched to 50 ohms, simple output match
|
OCR Scan
|
62702G
Siemens pulse sequence
power supply siemens s5
Siemens diode Ssi
|
PDF
|
Pnp transistor smd ba rn
Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj
|
OCR Scan
|
Q9001-1994i
CMSH1-20ML
Pnp transistor smd ba rn
transistor marking code 12W SOT-23
smd transistor marking p69
TRANSISTOR SMD MARKING CODE s2a
transistor smd bc rn
TRANSISTOR SMD MARKING CODE bc ru
1ff TRANSISTOR SMD MARKING CODE
smd transistor P2D
Motorola transistor smd marking codes
SMD TRANSISTOR MARKING P28
|
PDF
|
