SOT123 Search Results

SOT123 Price and Stock

Filter by Manufacturer


Nexperia BUK7S1R5-40HJ MOSFETs BUK7S1R5-40H/SOT1235/LFPAK88
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	BUK7S1R5-40HJ	Reel	6,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.97	Buy Now
Nexperia BUK7S1R0-40HJ MOSFETs BUK7S1R0-40H/SOT1235/LFPAK88
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	BUK7S1R0-40HJ	Reel	4,000		2,000	1 - 10 - 100 - 1000 - 10000 $1.73	Buy Now
Nexperia 74AUP2G08GXX Logic Gates 74AUP2G08GX/SOT1233/X2SON8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	74AUP2G08GXX	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.161	Buy Now
Nexperia 74AUP2G00GXX Logic Gates 74AUP2G00GX/SOT1233/X2SON8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	74AUP2G00GXX	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.17	Buy Now
Nexperia 74LVC2G00GXX Logic Gates 74LVC2G00GX/SOT1233/X2SON8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	74LVC2G00GXX	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.169	Buy Now

Find more SOT123 price and stock on Findchips.com

SOT123 Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
SOT1230	NXP Semiconductors	Plastic very thin small outline package; no leads; 6 terminals; body 1.1 x 0.9 x 0.47 mm	Original	PDF
SOT1239B	NXP Semiconductors	earless flanged LDMOST ceramic package; 6 leads	Original	PDF
SOT123A_112	NXP Semiconductors	CRFM4; blister pack packing method; standard product orientation 12NC ending 112	Original	PDF

SOT123 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Package outline Earless flanged LDMOST ceramic package; 6 leads SOT1239B D F A 3 L D D1 c U1 1 4 5 α H U2 Z Z1 6 2 b 7 w2 b1 E E1 5 D Q 10 mm scale Dimensions Unit 1 A max 4.75 nom min 3.45 mm b b1 c D D1 E F E1 H L Q U1 U2 1.83 12.83 0.20 20.02 19.96 9.53	Original	PDF	OT1239B 06ions sot1239b
Untitled Abstract: No abstract text available Text: Package outline XSON6: plastic very thin small outline package; no leads; 6 terminals; body 1.1 x 0.9 x 0.47 mm shape optional 6x A D SOT1230 e 3 4 e1 E v e1 6 1 pin 1 index area pin 1 index area A1 B y v y1 C A A B A B b (6×) L (6×) C shape optional (4×)	Original	PDF	OT1230 sot1230
Untitled Abstract: No abstract text available Text: 23A T1 SO SOT123A CRFM4; blister pack packing method; standard product orientation 12NC ending 112 Rev. 1 — 11 October 2012 Packing information 1. Packing method Blister cover ESD Label Foam Blister bottom ESD Label Printed plano box Space for additional label	Original	PDF	OT123A msc071 OT123A
sot123a Abstract: C 245 B Q 371 Transistor SOT123 Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged ceramic package; 2 mounting holes; 4 leads SOT123A D A F D1 q C B U1 w2 M C M c H b 4 3 α A U2 p U3 w1 M A M B M 1 2 H Q 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions	Original	PDF	OT123A sot123a C 245 B Q 371 Transistor SOT123
Untitled Abstract: No abstract text available Text: BLF8G20LS-160V Power LDMOS transistor Rev. 2 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1.	Original	PDF	BLF8G20LS-160V
LPC2148 i2c Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.	Original	PDF	OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
IRF150CF Abstract: GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTF152 YTFP150 2SK747 Text: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Max (V) Clsa Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 BUZ349 BUZ349 SFN152 YTFP152	Original	PDF	BUZ349 SFN152 YTFP152 YTF152 IRFP152 RFH35Nl0 RFK35Nl0 PB125N60HM PB125N60HP IRF150CF GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTFP150 2SK747
Untitled Abstract: No abstract text available Text: ;6 21 BGU8L1 SiGe:C Low Noise Amplifier MMIC for LTE Rev. 1 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description The BGU8L1 is a Low Noise Amplifier LNA for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8L1 requires one external	Original	PDF
350mA 1watt led driver circuit Abstract: varistor 222k DIODE ZENER 3.3V 350mA 220vac driver 220vac LED driver variable resistor 500k cth6-222k varistor MOV1 90V, 350mA LED driver 2A 220vac driver Text: HV9931DB5 Universal Input, Single High Brightness, LED Driver General Description Speciﬁcations The Supertex HV9931DB5 demo board is a high brightness HB LED power driver to supply one HB LED, using the HV9931 IC from either a 110 or 220VAC supply. The	Original	PDF	HV9931DB5 HV9931 220VAC HV9931DB1 OT-123 HD06-T 350mA 1watt led driver circuit varistor 222k DIODE ZENER 3.3V 350mA 220vac driver 220vac LED driver variable resistor 500k cth6-222k varistor MOV1 90V, 350mA LED driver 2A 220vac driver
AgCu28 Abstract: No abstract text available Text: CHAPTER 7 ENVIRONMENTAL INFORMATION page Introduction 7-2 Explanation of the tables 7-2 General safety remarks 7-5 Substances not used by Philips Semiconductors 7-6 Disposal and recycling 7-7 General warnings 7-7 Chemical content tables: Diodes Transistors	Original	PDF	SC-74 OT457 representiveSOT23 FeNi42 SnPb20 AgCu28
BD561 Abstract: BD585 PT9788A 8D434 BDX24 2SD810 BD186 motorola MJE2480 BD163 BD272 Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) hFE fT ICBO t0N T(CE)Mt Max PD Max Max ON) Min (Hz) (A) (8) Max (Ohms) Toper Max CO Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . -10 MRF222 MRF223	Original	PDF	MRF222 MRF223 MRF238 2N6083 SD1272 BD162 2SD810 PT9795 BD561 BD585 PT9788A 8D434 BDX24 BD186 motorola MJE2480 BD163 BD272
2SB553Y Abstract: IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553 Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type •c Max A V(BR)CEO on fT *ON r hFE 'CBO Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15	Original	PDF	2SC3153 2SC3535 2SC3156 2SC3482 2SC3486 2SD1403 2SC3685 SDT17203 2SD1456 2SB553Y IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553
BC548 TRANSISTOR REPLACEMENT Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction	Original	PDF	BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Untitled Abstract: No abstract text available Text: <£s.m.i- 2onau,ctoi \Pioaucti, Una. TELEPHONE: (973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 VHP power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f.	Original	PDF	BLV20 18-J20 OT123A

865 RF transistor Abstract: RF Transistor reference "RF Power Modules" microwave transistor 03 Power Transistor MS-012AA SOT391A EU2A sot147a 1117 sot223 Text: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF & Microwave Power Transistors and RF Power Modules 1998 Feb 17 File under Discrete Semiconductors, SC19a Philips Semiconductors RF & Microwave Power Transistors and RF Power Modules Package outlines SO8: plastic small outline package; 8 leads; body width 3.9 mm	Original	PDF	SC19a OT96-1 OT502A 865 RF transistor RF Transistor reference "RF Power Modules" microwave transistor 03 Power Transistor MS-012AA SOT391A EU2A sot147a 1117 sot223
Untitled Abstract: No abstract text available Text: Concise Catalogue 1996 Philips Semiconductors DISCRETE SEMICONDUCTORS RF power transistors RF & MICROWAVE SEMICONDUCTORS & MODULES RF POWER MOS TRANSISTORS type number PL PEP ^DS (W) (V) G p (dB) package 20.1) 23 20.1) 17 20 SOT123 SOT 123 SOT121 SOT121	OCR Scan	PDF	OT123 OT121 BLF145 BLF175
SOT123 Package Abstract: SOT123 BLF244 International Power Sources SOT-123 Text: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability	OCR Scan	PDF	BLF244 711002b OT123 7110fi5b T-39-11 SOT123 Package SOT123 BLF244 International Power Sources SOT-123
43120203664 Abstract: BLW83 PHILIPS 4312 amplifier 431202036640 choke BY206 philips carbon film resistor Text: bSE V m 7110&Eb □□b332*ì 75^ BiPHIN BLW83 _PHILIPS INTERNATIONAL_ ^ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transm itting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V. The transistor is specified fo r s.s.b. applications as linear	OCR Scan	PDF	BLW83 711002b 00b3337 BLW83 43120203664 PHILIPS 4312 amplifier 431202036640 choke BY206 philips carbon film resistor
irf9110 Abstract: SOT-123 IRF224 irf113 1rf48 BUZ10 BUZ63 IRF9122 irfl33 IRF034 Text: - 250 - Ta=25<1C f m € tt € t Vd s or 4- V d g Vg s (V) (V) If l: * /CH * /CH (A) (W) V g s th) 1DSS Jg s s Pd Id max (nA) Vg s (V) C m A) Vd s (V) (V) (V) Id (mA) ff] % ft 1± Ciss (max) typ V g s ( 0 ) (V) typ (A) Id (A) 140* -25 TO-220AB 190* 25 TO-220AB	OCR Scan	PDF	1RF9Z32 O-220AB 1RF48 IRF034 BUZ171 O-220ftB irf120 to-204aa irf9110 SOT-123 IRF224 irf113 BUZ10 BUZ63 IRF9122 irfl33
SOT-123 Abstract: IRF9110 PHILIPS TO220 blf544b BLF246 BLF348 irc224 IRC350 IRC530 IRC832 Text: - % % A f ft i Vd s or Vd g tt £ i T Vg s Ta=25'C) «É. Ig s s Id Pd * /C H * /CH (W) Vds (V) Id (nA) g fs Io(on) C ís s Coss ft B m ♦typ Vg s (V) (0) Id (A) * ty p (A) Vg s (V) *typ (S) Id (max) (max) (max) % (A) (pF) (pF) (pF) Vd s (V) % (V) P '200 ± 2 0	OCR Scan	PDF	2k6847 o-205af 2n6849 2n6851 OT-268 BIF548 OT-262 IRF9Z10 O-220 SOT-123 IRF9110 PHILIPS TO220 blf544b BLF246 BLF348 irc224 IRC350 IRC530 IRC832
BLW 95 Abstract: No abstract text available Text: h*\E t> m b b s a ^ a i o o s T H b i o?i i IAPX N A PIER PHILIPS/DISCRETE BLW 86 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: •I bb53^31 002flT33 624 N AHER PHILIPS/DISCRETE IAPX b lE BLV20 D V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran	OCR Scan	PDF	002flT33 BLV20
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b^E b b 5 3 T 3 i o p a a T m sqs BLV11 ]> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is	OCR Scan	PDF	BLV11
Untitled Abstract: No abstract text available Text: OOETTBfci MED M l A P X Philips Semiconductors Product specification HF/VHF power MOS transistor BLF242 1 N AMER PHIL IPS/DISCRETE h^E D PIN CONFIGURATION FEATURES • High power gain • Low noise • Easy power control • Good thermal stability • Withstands full load mismatch	OCR Scan	PDF	BLF242 OT123 OT123 MCA930

Privacy Settings

SOT123 Search Results

SOT123 Price and Stock

Nexperia BUK7S1R5-40HJ

Nexperia BUK7S1R0-40HJ

Nexperia 74AUP2G08GXX

Nexperia 74AUP2G00GXX

Nexperia 74LVC2G00GXX

SOT123 Datasheets (3)

SOT123 Datasheets Context Search

Untitled

Untitled

Untitled

sot123a

Untitled

LPC2148 i2c

IRF150CF

Untitled

350mA 1watt led driver circuit

AgCu28

BD561

2SB553Y

BC548 TRANSISTOR REPLACEMENT

Untitled

865 RF transistor

Untitled

SOT123 Package

43120203664

irf9110

SOT-123

BLW 95

Untitled

Untitled

Untitled