marking s11
Abstract: No abstract text available
Text: Multilayer Chip Balun CHM1608U-F 積層チップバラン Series TYPE CHM1608U-F Series 1.6±0.15 3 2 0.3±0.1 1 MARKING 0.8±0.1 0.8±0.1 4 5 6 0.55 0.25 TOP VIEW SIDE VIEW ③ ④ NC IN ② GND ① OUT1 ⑤ GND ⑥ OUT2 Unit: mm • Marking of polarity : marking is on the upper Surface of
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CHM1608U-F
CHM1608U-F
2400MHzR80.
800MHz
CHM1608U-F2R4A
CHM1608U-F2R4B
CHM1608U-F2R4C
marking s11
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2012U
Abstract: marking s11
Text: Multilayer Chip Balun CHM2012U-F 積層チップバラン Series TYPE CHM2012U-F Series 2.0±0.15 3 2 0.3±0.15 1 MARKING 1.0Max. 1.25±0.15 4 5 SIDE VIEW TOP VIEW ③ ④ 0.65 0.35 6 NC IN ② GND ① OUT1 ⑤ GND ⑥ OUT2 Unit: mm • Marking of polarity : marking is on the upper surface of the
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CHM2012U-F
CHM2012U-F
Electr012U-F1R8B
CHM2012U-F1R8C
CHM2012U-F2R0A
CHM2012U-F2R0B
CHM2012U-F2R0C
2012U
marking s11
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marking s11
Abstract: No abstract text available
Text: Multilayer Chip Balun CHM1608U-F 積層チップバラン Series TYPE CHM1608U-F Series 1.6±0.15 3 2 0.3±0.1 1 MARKING 0.8±0.1 0.8±0.1 4 5 6 0.55 0.25 TOP VIEW SIDE VIEW ③ ④ NC IN ② GND ① OUT1 ⑤ GND ⑥ OUT2 Unit: mm • Marking of polarity : marking is on the upper Surface of
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CHM1608U-F
CHM1608U-F
CHM1608U-F2R4A
CHM1608U-F2R4B
CHM1608U-F2R4C
CHM1608U-F3R4A
marking s11
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"marking E1"
Abstract: BFS17 BFS17R sot 23 transistor 70.2
Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4
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BFS17/BFS17R
BFS17
BFS17R
D-74025
17-Apr-96
"marking E1"
sot 23 transistor 70.2
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Untitled
Abstract: No abstract text available
Text: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking
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MT3S113P
SC-62
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MT3S113
Abstract: transistor 2F to-236 4360A
Text: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking
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MT3S113
O-236
SC-59
MT3S113
transistor 2F to-236
4360A
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Untitled
Abstract: No abstract text available
Text: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking
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MT3S113
O-236
SC-59
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mt3s113p
Abstract: No abstract text available
Text: MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking
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MT3S113P
SC-62
mt3s113p
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Untitled
Abstract: No abstract text available
Text: MT3S22P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S22P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF = 1.5dB typ. (@f=1GHz) • High Gain: |S21e| = 10.5dB (typ.) (@f=1GHz) 2 Marking
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MT3S22P
SC-62
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD106WS FAST SWITCHING DIODES SOD-323 FEATURES MARKING: S21 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Symb Parameter ol Limits Unit Non-Repetitive Peak reverse voltage
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OD-323
SD106WS
OD-323
100uA
100mA
200mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD106WS FAST SWITCHING DIODES SOD-323 + FEATURES - MARKING: S21 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Symb Parameter ol Limits Unit Non-Repetitive Peak reverse voltage
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OD-323
SD106WS
OD-323
100uA
100mA
200mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD106WS FAST SWITCHING DIODES SOD-323 FEATURES MARKING: S21 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Symb Parameter ol Limits Unit Non-Repetitive Peak reverse voltage
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OD-323
SD106WS
OD-323
100uA
100mA
200mA
1SS355
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MT3S46T
Abstract: No abstract text available
Text: MT3S46T TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S46T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES • Low Noise Figure :NF=1.2dB @f=2GHz · High Gain:|S21e| =11.5dB (@f=2GHz) 2 Marking 3 R5 1 2 TESM
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MT3S46T
MT3S46T
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MT4S101T
Abstract: No abstract text available
Text: MT4S101T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S101T TENTATIVE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES 1.2±0.05 Low Noise Figure :NF=0.8dB @f=2GHz • High Gain:|S21e| =17.0dB (@f=2GHz) 0.9±0.05 2 1 1.2±0.05 Marking
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MT4S101T
MT4S101T
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MT4S100T
Abstract: No abstract text available
Text: MT4S100T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S100T TENTATIVE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES 1.2±0.05 Low Noise Figure :NF=0.72dB @f=2GHz • High Gain:|S21e| =17.0dB (@f=2GHz) 0.9±0.05 2 1 1.2±0.05 Marking
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MT4S100T
MT4S100T
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Untitled
Abstract: No abstract text available
Text: MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB typ. (@f=1GHz) • High Gain: |S21e| =11dB (typ.) (@f=1GHz) 2 Marking M U
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MT3S20P
SC-62
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PDF
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Untitled
Abstract: No abstract text available
Text: MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB Typ. (@f=1GHz) • High Gain: |S21e|2=11dB(Typ.) (@f=1GHz) Marking PW-Mini
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MT3S20P
SC-62
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Untitled
Abstract: No abstract text available
Text: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:|S21e| =12 dB (typ.) (@ f=1 GHz) 2 Marking
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MT3S111
O-236
SC-59
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PDF
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Untitled
Abstract: No abstract text available
Text: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking
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MT3S111
O-236
SC-59
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MT3S19
Abstract: No abstract text available
Text: MT3S19 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure:NF=1.5 dB typ. (@ f=1 GHz) • High Gain:|S21e|2=12.5 dB (typ.) (@ f=1 GHz) Marking 3 T 1.
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MT3S19
O-236
SC-59
MT3S19
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2321 P-Channel 20-V D-S MOSFET SOT-23 APPLICATIONS z PA Switch z Load Switch 1. GATE 2. SOURCE 3. DRAIN MARKING: S21 Maximum ratings (Ta=25℃ unless otherwise noted)
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OT-23
CJ2321
OT-23
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Untitled
Abstract: No abstract text available
Text: MT3S19 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure:NF=1.5 dB typ. (@ f=1 GHz) • High Gain:|S21e|2=12.5 dB (typ.) (@ f=1 GHz) Marking 3 T 1.
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MT3S19
O-236
SC-59
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transistor MAR 819
Abstract: transistor MAR 543 sl2 357 BFS17
Text: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4
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OCR Scan
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BFS17/BFS17R
BFS17
BFS17R
26-Mar-97
transistor MAR 819
transistor MAR 543
sl2 357
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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OCR Scan
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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