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    MDS1100 Price and Stock

    Microchip Technology Inc MDS1100

    RF TRANS NPN 65V 1.03GHZ 55TU-1
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    DigiKey MDS1100 Bulk 25
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    Microchip Technology Inc MDS1100 134 28 Weeks
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    Avnet Silica MDS1100 54 Weeks 25
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    EBV Elektronik MDS1100 13 Weeks 25
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    MDS1100 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MDS1100 Advanced Power Technology RF Power Transistors: AVIONICS Original PDF
    MDS1100 Microsemi a high power COMMON BASE bipolar transistor. Original PDF

    MDS1100 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MDS1100

    Abstract: J162 transistor j237
    Text: MDS1100 1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization


    Original
    MDS1100 55TU-1 MDS1100 J162 transistor j237 PDF

    Untitled

    Abstract: No abstract text available
    Text: MDS1100 1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization


    Original
    MDS1100 55TU-1 MDS1100 PDF

    1030 mhz

    Abstract: MDS1100 1030 PULSED
    Text: MDS1100 1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization


    Original
    MDS1100 55TU-1 MDS1100 1030 mhz 1030 PULSED PDF

    transistor j237

    Abstract: MDS1100
    Text: MDS1100 1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization


    Original
    MDS1100 MDS1100 55TU-1 transistor j237 PDF

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original
    PDF

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


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    MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30 PDF