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    MDS3651

    Abstract: MDS365 mds3651r p-channel 60V 100A MOSFET
    Text: Preliminary – Subject to change without notice Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ General Description Features The MDS3651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability


    Original     		PDF MDS3651 MDS3651­ MDS365 mds3651r p-channel 60V 100A MOSFET

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    Abstract: No abstract text available
    Text: Preliminary – Subject to change without notice P-Channel Trench MOSFET -30V, -5.3A, 35mΩ General Description Features The MDS3651 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent


    Original     		PDF MDS3651 MDS3651â