MG10H6EM1 Search Results

MG10H6EM1 Price and Stock

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Toshiba America Electronic Components MG10H6EM1 Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	MG10H6EM1		8			1 - 10 - 100 - 1000 - 10000 -	Get Quote

MG10H6EM1 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MG10H6EM1		Unknown	Power and Industrial Semiconductors Data Book		Scan	PDF
MG10H6EM1		Unknown	Catalog Scans - Shortform Datasheet		Scan	PDF
MG10H6EM1		Unknown	Catalog Scans - Shortform Datasheet		Scan	PDF

MG10H6EM1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MG10H6EM1 Abstract: v339 GY 339 Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG10H6EM1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . The Drain is Isolated from Case. . 6 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drian-Source ON Resistance	OCR Scan	PDF	MG10H6EM1 180gr MG10H6EM1 v339 GY 339
MG10H6EM1 Abstract: No abstract text available Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG10H6EM1 HIGH P O W E R S W I T C H I N G A P P L I C AT ION S. U n i t in m m M O T O R CONT ROL A P P L I C AT ION S. 1 0 -FA ST -O N -T A B # 1 1 0 . T h e D r a i n is I s o l a t e d f r o m C a se. . 6 M O S F E T s a r e B u i l t - i n to 1 P a c k a g e	OCR Scan	PDF	MG10H6EM1 180gr MG10H6EM1
j2y transistor Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497 Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi conductor is correct for your application, this brochure outlines maximum ratings,	OCR Scan	PDF	O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
mg15g1al3 Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115 Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673	OCR Scan	PDF	2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
MG30H1BL1 Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1 Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX	OCR Scan	PDF	00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
6BM8 Abstract: equivalent MG15G6EM1 st zo 607 2-48A3B Text: - 206 - MOS w m m F E T £ 4 ff l/6 B M 8 EM-1 GM-1 + o—- f O 7 V —* - f n < - f f l 7 ? 7 .\-y firftz£ Z tm \|- h i k SU GV ; h , i 3 J \|1* 1 QU o 4 h i 1— 1 A\ 11 JVO-11 -OU 1 OX o i 1 V dss V GSS & U £ JI	OCR Scan	PDF	H-101 6BM8 equivalent MG15G6EM1 st zo 607 2-48A3B
2sk1029 Abstract: MP6702 2sk1513 2SK56 MG30G2YM1 MG15G1AM1 MG15C4HM1 MG50D2DM1 Text: MOS-FET Connection Clrcua Symbol <D <z AM ZM YM DM Maximum Rating VODS V 8 15 10 150 2SK578* 260 2SK447"* 460 2SK568* 500 2SK1513" 25 250 MG30D1ZM1 250 MG30D2YM1 MG50D2YM1 460 MG30G2YM1 MG50G2YM1 500 MG30H2YM1 MG50H2YM1 260 MG30D2DM1 MG50D2DM1 4S0 MG30G2DM1	OCR Scan	PDF	2SK578* 2SK447" 2SK568* 2SK1513" 2SK1029* MG15G1AM1 2SK1333* MG30D1ZM1 MG30D2YM1 MG30G2YM1 2sk1029 MP6702 2sk1513 2SK56 MG15C4HM1 MG50D2DM1