MG50G2YL1 Search Results

MG50G2YL1 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MG50G2YL1		Westcode Semiconductors	NPN transistor for high power switching and notor control applications, 600V, 50A		Scan	PDF
MG50G2YL1A		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF
MG50G2YL1A		Unknown	Power and Industrial Semiconductors Data Book		Scan	PDF
MG50G2YL1A		Unknown	Catalog Scans - Shortform Datasheet		Scan	PDF

MG50G2YL1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TOSHIBA MG150N2YS40 Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40 Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40	PDF
mg75n2ys40 Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A Text: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上げます。廃止品種 1 形名 02BZ2.2~4.7 代替品種	Original	02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A	PDF
mg75n2ys40 Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A Text: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A	PDF
MG50G2YL1A Abstract: A 222G Text: MG50G2YL1A GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hFE=100 Min. (IC=50A)	OCR Scan	MG50G2YL1A 00A/ys MG50G2YL1A A 222G	PDF
Untitled Abstract: No abstract text available Text: MG50G2YL1A— SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain:	OCR Scan	MG50G2YL1A-- MG50G2YL1A	PDF
MG30G2CL3 Abstract: MG25N2CK1 MG75H2YL1A MG50G2CL3 MG75G2YL1A MG75H2CL1 MG15N2CK1 MG25M2YK1 MG25N2YK1 KG29 Text: -219% £ CK-3 Cl O B1 Bl El/C 2 E1/C2 62 & 3 . ;U -K Ta=25t m s Ts'i (V) (us) IB VcE V BE t St 9 t rr V f I B1 t on I B2 tf I f C//s) IF (A) fi * (A) V BE di/dt ccm ^ fifi mm Wi-F SP m g b m ^ £ fi Á (H) IS * 3.5 15 0.3 2 h 6 0.3 -0.9 600 40 1.5 15 1.0	OCR Scan	2-68B2A MG15N2CK1 2-94C3A NG15N2YK1 HG25M2CK2 MG25M2YK1 H-101 MG30G2CL3 MG25N2CK1 MG75H2YL1A MG50G2CL3 MG75G2YL1A MG75H2CL1 MG15N2CK1 MG25M2YK1 MG25N2YK1 KG29	PDF
MG50G2 Abstract: No abstract text available Text: dF TOSHIBA íDI SC RE TE /OPT O> 90D 16006 9097 250 T O S HI BA DISCRETE/OPTO TO SH IB A I t OTTHSD DDlbQDt, 1 J ~ SEMICONDUCTOR r-3J-3S~ TOSHIBA GTR MODULE MG30G2YL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.	OCR Scan	MG30G2YL1 MG50G2YL3 MG50G2	PDF
Untitled Abstract: No abstract text available Text: DiT\| SOTTESO GDltESl 3 TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR 90D 16251 D 7 -3 3 - 3 5 TOSHIBA GTR MODULE MG75H6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.	OCR Scan	MG75H6EL1 Ic-75A) Icm75A) MG75H6EL1-1 MG75H6EL1-4 MG150Q2YK1 MG200Q1UK1 MG75Q2YK1 MG50Q2YK1 10Sec.	PDF
mg15g1al3 Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115 Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673	OCR Scan	2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115	PDF
MG30H1BL1 Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1 Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX	OCR Scan	00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1	PDF
MG30G2CL3 Abstract: MG50M2CK2 MG75H2CL1 MG25M2CK2 MG50M2YK9 MG75H2YL1A MG50G2YL1A MG25M2YK9 MG50Q2Y MG15N2YK1 Text: - 218 — n p n , > o 9 - ' y \ v • o y : i- * 'í) l- f ''í± - F i4 Vauxnv - i n « 2 flü ü fflü g tl) asn o s CK-1 / 'W W ^ U K U . lu i. t CK-2 tu o ¡>j± o Y - V T o BI y h / H 1’ c r ) i¡'±/\ Z B1 aZ E l/ B2 32 í± 1 . T c=25 c * m % V CBO	OCR Scan	MG15N2 MG15N2YK1 MG25M2CK2 MG25M2YK1 H-101 MG30G2CL3 MG50M2CK2 MG75H2CL1 MG50M2YK9 MG75H2YL1A MG50G2YL1A MG25M2YK9 MG50Q2Y	PDF
T3D 54 DIODE Abstract: Diode T3D 54 T3D 81 DIODE T3D DIODE T3D 83 DIODE diode T3D 25 Diode T3D 41 CIRCUIT T3D 28 diode MG300M1UK1 T3D 18 diode Text: WEST CODE S EMI C OND U CT O RS WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single	OCR Scan		PDF
MG100M2YK1 Abstract: TRANSISTOR D 880 MG200M1UK1 MG75G2YL1 MG75M2YK1 MG15N2YK1 MG25M2YK1 MG25N2YK1 Westcode MG50G2YL1 Text: WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly simplify mounting. A wide variety of devices	OCR Scan		PDF