MGF1402B
Abstract: MGF1402
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET MITSUBISHI ELECTRIC
|
Original
|
PDF
|
MGF1402B
MGF1402B
MGF1402
|
MGF1953A
Abstract: No abstract text available
Text: October /2003 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1953A Microwave Power MES FET Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF1953A is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses.
|
Original
|
PDF
|
MGF1953A
MGF1953A
20dBm
12GHz
3000pcs
|
MGF1951A
Abstract: No abstract text available
Text: October/2003 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1951A Microwave Power MES FET Leadless Ceramic Package DESCRIPTION The MGF1951A is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing
|
Original
|
PDF
|
October/2003
MGF1951A
MGF1951A
13dBm
12GHz
3000pcs
|
MGF1951A
Abstract: MGF1951A-01 MGF1951
Text: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1951 MGF1951A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1951A is a 20mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES
|
Original
|
PDF
|
MGF1951
MGF1951A
MGF1951A
13dBm
12GHz
MGF1951A-01
MGF1951A-01
MGF1951
|
ID600A
Abstract: No abstract text available
Text: < Power GaAs FET > MGF1952A Leadless ceramic package DESCRIPTION The MGF1952A power MES FET is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES High gain and High P1dB
|
Original
|
PDF
|
MGF1952A
MGF1952A
17dBm
12GHz
000pcs/reel
ID600A
|
gaas fet marking J
Abstract: No abstract text available
Text: < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power MES FET is designed for use in S to Ku band power amplifiers. Outline Drawing FEATURES High gain and High P1dB P1dB=15dBm, Glp=10 dB Typ. @ f=12GHz APPLICATION Fig.1
|
Original
|
PDF
|
MGF1941AL
MGF1941AL
15dBm,
12GHz
000pcs/reel
gaas fet marking J
|
Untitled
Abstract: No abstract text available
Text: MGF1102 Transistors N-Channel Dual-Gate UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-6.0 I(D) Max. (A)80m P(D) Max. (W)300m Maximum Operating Temp (øC)150 I(DSS) Min. (A)15m I(DSS) Max. (A)80m @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25
|
Original
|
PDF
|
MGF1102
|
MGF1404
Abstract: No abstract text available
Text: MGF1404-61-16 Transistors P-Channel UHF/Microwave MOSFET V BR DSS (V) V(BR)GSS (V)-6 I(D) Max. (A)80m P(D) Max. (W)200m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)15m I(DSS) Max. (A)80m @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.20m
|
Original
|
PDF
|
MGF1404-61-16
MGF1404
|
Untitled
Abstract: No abstract text available
Text: MGF1323 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-6.0 I(D) Max. (A)80m P(D) Max. (W)240m Maximum Operating Temp (øC)175 I(DSS) Min. (A)40m I(DSS) Max. (A)80m @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.20
|
Original
|
PDF
|
MGF1323
|
Untitled
Abstract: No abstract text available
Text: 0017072 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1S7 MGF1923 TAPE CARRIER SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters linches The M G F 1 9 2 3 , low noise GaAs FET with an N-channel 4 .0 ± 0 .2 Schottky gate, is designed for use in S to Ku band ampli
|
OCR Scan
|
PDF
|
MGF1923
13dBm
12GHz
|
MGF1801B
Abstract: MGF1801
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801B f i MICROWAVE POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 8 0 1 B , m ed iu m -p o w e r GaAs FET w ith an Nchannel S ch o ttky gate, is designed fo r use in S to X band U n it 4M IN . m illi m e t e r s liu c h e s i
|
OCR Scan
|
PDF
|
MGF1801B
MGF1801B
MGF1801
|
mitsubishi microwave
Abstract: MGF1601
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The M G F 1 6 0 1 B , m ed iu m -p o w er GaAs FET w ith an N channel S cho ttky g a te, is designed fo r use in S to X band am plifiers and oscillators. The herm etically sealed m etalceram ic package assures m inim um parasitic losses, and
|
OCR Scan
|
PDF
|
MGF1601B
mitsubishi microwave
MGF1601
|
MGF1302
Abstract: 251C
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1302 LOW NOISE GaAs FET DESCRIPTION O UTLINE DRAWING T h e M G F 1 3 0 2 is a low-noise GaAs F E T w ith an N-channel S c h o ttky gate, which is designed fo r use in S to X band 4 M IN . U n i t : m i l l i m e t e r s inches
|
OCR Scan
|
PDF
|
MGF1302
MGF1302
12GHz
251C
|
small signal GaAs FET
Abstract: MGF1923 IL86
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1923 TAPE CARRIER SM ALL SIGNAL GaAs FET DESCRIPTION The M G F 1 9 2 3 , low noise GaAs FET w ith an N-channel Schottky gate, is designed for use in S to Ku band ampli fiers. The M G F 1 9 2 3 is mounted in the super 12 tape.
|
OCR Scan
|
PDF
|
MGF1923
12GHz
GF1923
small signal GaAs FET
MGF1923
IL86
|
|
|
MGF1102
Abstract: mgf11 dual-gate N-Channel, Dual-Gate FET
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1102 ¡ FOR LOW-NOISE AMPLIFIERS DUAL-GATE N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTION OUTLINE DRAWING The M G F 1 1 0 2 is a low noise and high gain GaAs dual gate FET for L to C band applications. Unit: millimeters inches
|
OCR Scan
|
PDF
|
MGF1102
MGF1102
mgf11
dual-gate
N-Channel, Dual-Gate FET
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 0 3 B low -rtoise GaAs FET w ith an N-channel S ch o ttky gate is designed fo r use in S to Ku band am pli fiers. The herm etically sealed m etal-ceram ic package as
|
OCR Scan
|
PDF
|
MGF1403B
MGF1403B
Ta-251S
12GHz
|
MGF1801B
Abstract: No abstract text available
Text: HIGH POWER Ga As FET M G F 1601B /1801 B /09xxx/24xxx Series Typical Characteristics Type MGF1801B MQF0904A . MGF090SA . IWIQF0908B M8F0M78 MGFQ909A * * MGFOStOA * M F0911A * «IOF2407À MGF241BA MQF243QA ★ ★ : Under development a s> 21.8 23.0 28.0
|
OCR Scan
|
PDF
|
1601B
/09xxx/24xxx
MGF1801B
MQF0904A
MGF090SA
IWIQF0908B
M8F0M78
MGFQ909A
F0911A
IOF2407À
|
VSF 203 NF
Abstract: MGF1302
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1302 LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING T h e M G F 1 3 0 2 is a lo w noise G aA s F E T w ith an N -ch an nel S c h o ttk y gate, w h ic h is designed fo r use in S to X band Unit: millimeters inches 4 M iN .
|
OCR Scan
|
PDF
|
MGF1302
VSF 203 NF
MGF1302
|
0619
Abstract: g720
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1423B SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 4 2 3 B , low -noise GaAs FET w ith an N -ch an nel S cho ttky gate, is designed fo r use in S to Ku band am p li U n it m i l l i m e t e r s i .r ic h e s t
|
OCR Scan
|
PDF
|
MGF1423B
157MIN
12GHz
10rcA
0619
g720
|
E 212 fet
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The M G F 1 8 0 1 B , medium-power GaAs FET with an Nchannel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and
|
OCR Scan
|
PDF
|
MGF1801B
E 212 fet
|
MGF1302
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1302 LOW NOISE GaAs FET DESCRIPTION O UTLINE DRAWING The M G F 1302 is a low-noise GaAs FET w ith an N-channel Schottky gate, which is designed for use in S to X band U n it: m illim e te rs inches 4 M IN . 1 . 8 5 ± 0 .2
|
OCR Scan
|
PDF
|
MGF1302
MGF1302
12GHz
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1903B TARE CARRIER LOW NOISE GaAs FET D E S C R IP T IO N The MGF1 9 0 3 B is a low noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to Ku band amplifiers. The hermetically sealed metal-ceramic package
|
OCR Scan
|
PDF
|
MGF1903B
MGF1903B
F1303B.
|
E 212 fet
Abstract: MGF1801BT
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky gate , is designed for use S-X band amplifiers and oscillators. The hermetically sealed metal-ceramic package
|
OCR Scan
|
PDF
|
MGF1801BT
MGF1801BT
23dBm
100mA
E 212 fet
|
MGF1323
Abstract: small signal GaAs FET L to Ku band amplifiers KU 745 KU 608 ku 202
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> beMTñST DD17Û3S BAT MGF1323 SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING T h e M G F 1 3 2 3 , low -noise G aA s F E T w ith U n it, m illim eters inches an N -channel 4 M IN . 1.85 ± 0 . 2 4 M IN . (0 .1 5 7 M IN .) (0 .0 7 3 + 0 .0 0 8 ) (0 .1 5 7 M \N .)
|
OCR Scan
|
PDF
|
MGF1323
MGF1323,
13dBm
157MIN.
h24cia2tÃ
12GHz
MGF1323
small signal GaAs FET
L to Ku band amplifiers
KU 745
KU 608
ku 202
|
