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Mitsubishi Electric MGF1601B-01 Electronic Component
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MGF1601 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MGF1601		Unknown	High Frequency Device Data Book (Japanese)		Scan	PDF
MGF1601		Unknown	FET Data Book		Scan	PDF
MGF1601B		Mitsubishi	Microwave Power GaAs FET		Original	PDF
MGF1601B		Mitsubishi	TRANS JFET N-CH 6V 250MA 3GD-10		Original	PDF

MGF1601 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
k 1413 FET Abstract: MGF1601B MGF1601 Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters	Original	PDF	MGF1601B MGF1601B, k 1413 FET MGF1601B MGF1601
MGF1601B Abstract: MGF1601 Text: < High-power GaAs FET small signal gain stage > MGF1601B S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures	Original	PDF	MGF1601B MGF1601B, 100mA MGF1601B MGF1601
MGF1601B Abstract: mitsubishi microwave MGF1601 Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters	Original	PDF	MGF1601B MGF1601B, MGF1601B mitsubishi microwave MGF1601
MGF4919G Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60 Text: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии	Original	PDF	SPP02N60 SPP03N60 SPP04N60 SPP07N60 SPP11N60 SPP20N60 SPW11N60 SPW20N60 SPW47N60 SPP02N80 MGF4919G SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	PDF	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
BUZ90af Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l Text: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198	Original	PDF	O-251AA O-247AC O-220AB PowerSO-20 BUZ90af hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l
gaas fet marking B Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K" Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source	Original	PDF	QL-1104E-A July/2008) GD-26, MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A MGF1954A MGF4851A gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
mitsubishi microwave Abstract: MGF1601 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The M G F 1 6 0 1 B , m ed iu m -p o w er GaAs FET w ith an N channel S cho ttky g a te, is designed fo r use in S to X band am plifiers and oscillators. The herm etically sealed m etalceram ic package assures m inim um parasitic losses, and	OCR Scan	PDF	MGF1601B mitsubishi microwave MGF1601
MGF1502 Abstract: MGF1412 MGF1601 mgf2116 MGF1802 MGF2124 MGF1404 MGF1405 MGF1902 MGF1501 Text: - 152 - m. MGF14Q3 MGF1404 MGF1405 MGF1412 MGF1413 MGF1414 MGF1423 MGF1425 MGF1501 MGF1502 MGF1601 MGF1801 MGF1802 MGF1902 MGFÎ903 MGF1904 MGF2116 MGF2117 MGF2124 MGF2124F MGF2124G MGF2148 MGF2148F MGF2148G MGF2172 MGF2205 MGF2407 MGF2407A MGF2415 MGF2415A	OCR Scan	PDF	MGF1403 MGF1404 MGF1405 MGF1412 MGF1413 12GHz MGF2117 35MHz MGF2124 MGF1502 MGF1601 mgf2116 MGF1802 MGF2124 MGF1902 MGF1501
GF-17 Abstract: gw 340 GD10 MGF0905A MGF1601 Text: HIGH POWER G aAs FET M G F16 0 1 B /1 801 B /09xxx/24xxx Series Typical Characteristics Type MGF1601B MG F1801B MQF0904A MGF0905A MGF090BB MQF0907B MQF2407A MGF241SA MGF2430A MGF244B PldB dBm 21.8 23.0 28.0 34.0 37.0 40.0 24.5 27.5 30.5 32.0 I \ GW: (dB)	OCR Scan	PDF	/09xxx/24xxx GD-10 GF-21 GF-17 MGF1601B F1801B gw 340 GD10 MGF0905A MGF1601
MGF1601A Abstract: MGF1801 MGF1601 MGF1801-01 MGFc1801 Text: Die_ MGFC1801 Package MGF1601A MGF1801 ^M ITSUBISHI ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES Devices in this family are constructed using theMGFCl801 die. These devices are N-channel Schottky gate type and are suitable for use in medium output power amplifiers and	OCR Scan	PDF	theMGFCl801 MGF1601A/1801 MGFC1801 MGF1601A MGF1801 MGF1601A: MGFC1801 MGF1801 MGF1601 MGF1801-01
MGF1601 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION OUTLINE DRAWING U n itm illim e te rs The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The	OCR Scan	PDF	MGF1601B MGF1601B, 100mA Pro54 MGF1601
MGF1601 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION U ntim i Kmeters OUTLINE DRAWING The MGF1601B, medium-power GaAs FET with an N-channel Schotlky gate, is designed lor use in S 1o X band amplifiers and oscillators. The hermetically	OCR Scan	PDF	MGF1601B MGF1601B, 100mA GD-10 MGF1601
MGF1601 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF1601B MICROWAVE POWER GaAs FET DESCRIPTION The M G F 1 6 0 1 B , m ed iu m -p o w er GaAs FET w ith an N channel S ch o ttk y gate, is designed fo r use in S to X band am plifiers and oscillators. Th e herm etically sealed m etalceram ic package assures m inim um parasitic losses, and	OCR Scan	PDF	GF1601B MGF1601

MGF4919G Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A Text: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10	OCR Scan	PDF	MGF1302 MGF1303B MGF1323 MGF14 MGF1412B MGF1403B MGF1423B MGF1425B MGF1902B MGF1903B MGF4919G MGF4919 MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
M52777SP Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30	OCR Scan	PDF	2SA1115 2SA1235 2SA1235A 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 M52777SP M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
lt 6249 Abstract: MGF1601 6249 Text: MITSUBISHI {DISCRETE S O ti oFIbSM TâST aoioa?b i M IT SU B ISH I SEMICONDUCTOR <GaAs FET> M G F 1 G 0 1 0 2 4 9 82 9 MITSUBISHI 9 1 D 10076 DISCRETE SC D FO R M IC R O W A V E P O W E R A M P L IF IE R S DESCRIPTION The M G F 1 6 0 1 , medium-power G aA s F E T with an Nchannel Sc h ottk y gate,lis designed for use in S- to X-band	OCR Scan	PDF