Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC40V7785 7.7 – 8.5 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V7785 is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC40V7785
MGFC40V7785
50ohm
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MGFC40V7785
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7785 7.7 ~ 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004
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MGFC40V7785
June/2004
MGFC40V7785
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC40V7785 7.7 – 8.5 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V7785 is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC40V7785
MGFC40V7785
-45dBc
29dBm
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C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
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M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
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Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7785 7 .7 ~ 8 .5 G H z BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 7 7 8 5 is an in te rn a lly Im pedance-m atched GaAs p o w e r F E T especially designed fo r use in 7 . 7 - 8 . 5 G H z band a m p lifie rs . T h e h e rm e tic a lly sealed m etal-ceram ic
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MGFC40V7785
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MGFC40V7785A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> _. k n V MGFC40V7785A m H l& s t <.P*c 2 , " t o c h » t' 9 0 ' *"“M L »<•5ub,e s p^ 7 .7 — 8 .5 G H z BAN D 10W IN T E R N A L L Y M A TC H ED GaAs F E T DESCRIPTION The M G F C 4 0 V 7 7 8 5 A is an in te rna lly im p e d a n ce -m a tch e d
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MGFC40V7785A
MGFC40V7785A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7785B Vi are l'niS 7 .7 — 8.5G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 7 8 5 B is an in te rna lly im p eda nce -m atche d GaAs power F ET especially designed fo r use in 7 .7 - 8 . 5
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MGFC40V7785B
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3642G
Abstract: No abstract text available
Text: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m
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