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    MGFC47V5864 Search Results

    MGFC47V5864 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC47V5864 Mitsubishi 5.8 - 6.4 GHz BAND 50W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC47V5864A Mitsubishi 5.8-6.4GHz band 50W internally matched GaAs fet Scan PDF

    MGFC47V5864 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGFC47V5864

    Abstract: 5.8 ghz transmitter
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC47V5864 5.8~6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit : millimeters 24+/-0.3 2MIN. The MGFC47V5864 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ∼ 6.4GHz


    Original     		PDF MGFC47V5864 MGFC47V5864 47dBm June/2004 5.8 ghz transmitter

    50W 4 GHz linear power amplifier

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC47V5864 5.8 – 6.4 GHz BAND / 50W DESCRIPTION OUTLINE DRAWING Unit : millimeters 2 4+/-0.3 2 MIN. The MGFC47V5864 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.4


    Original     		PDF MGFC47V5864 MGFC47V5864 50W 4 GHz linear power amplifier

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC47V5864 5.8 – 6.4 GHz BAND / 50W DESCRIPTION OUTLINE DRAWING Unit : millimeters 2 4+/-0.3 2 MIN. The MGFC47V5864 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.4


    Original     		PDF MGFC47V5864 MGFC47V5864

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original     		PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1

    MGFS45H2201G

    Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
    Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety


    Original     		PDF H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf

    MGFC47V5864

    Abstract: 5.8 ghz transmitter
    Text: M ITSU B ISH I S E M IC O N D U C T O R <GaAs FET> MGFC47V5864 5.8~6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N OUTLINE DRAWING The MGFC47V5864 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.4GHz


    OCR Scan     		PDF MGFC47V5864 MGFC47V5864 47dBm 25deg 10MHz 5.8 ghz transmitter

    MGFC47V5864

    Abstract: mitsubishi optical transmitter
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> R/IGFC47V5864 5.8~6.4G H z BAND 50W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING The MGFC47V5864 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.4GHz band amplifiers. The hermetically sealed metal-ceramic package


    OCR Scan     		PDF MGFC47V5864 MGFC47V5864 47dBm mitsubishi optical transmitter

    C47V5864

    Abstract: 817 CN C47V GF53
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC47V5864 5 . 8 - 6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G FC 47V5864 device is an internally impedance-matched Unit : millimeters GaAs power FET especially designed for use in 5.8 ~ 6 .4 G H z


    OCR Scan     		PDF MGFC47V5864 47V5864 47dBm transm30 C47V5864 817 CN C47V GF53