Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MGFC5213 Search Results

    MGFC5213 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC5213 Mitsubishi K-Band 2-Stage Power Amplifier Original PDF

    MGFC5213 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGFC5213 K-Band 2-Stage Power Amplifier Target Specifications ELECTRICAL CHARACTERISTICS Ta=25 Degree C. Symbol IDSS1 IDSS2 Vp1 Vp2 P1dB Parameter Drain Saturation Current Min. 600 1200 -2.0 -2.0 Vd=3.0V Drain Saturation Current


    Original     		PDF MGFC5213 360mA* 720mA* 30dBm

    MGFC5213

    Abstract: k-band amplifier
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5213 Notice : This is not a final specification Some parametric limits are subject to change. K-Band 2-Stage Power Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5213 is a GaAs MMIC chip especially designed for 27.5 ~ 30.0 GHz band High


    Original     		PDF MGFC5213 MGFC5213 360mA, k-band amplifier

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5213 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-S tage Power Amplifier DESCRIPTION The MGFC5213 is a GaAs MMIC chip especially designed for 27.5 ~ 30.0 GHz band High


    OCR Scan     		PDF MGFC5213 MGFC5213