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    MJ810 Search Results

    MJ810 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MJ8100 Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=60 / Ic=5 / Hfe=25-180 / fT(Hz)=30M / Pwr(W)=10 Original PDF
    MJ8100 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJ8100 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MJ8100 Motorola European Master Selection Guide 1986 Scan PDF
    MJ8100 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    MJ8100 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MJ8100 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MJ8100 Unknown Transistor Replacements Scan PDF
    MJ8100 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MJ8100 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MJ8100 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    MJ8100 Semelab Bi-polar Transistors (CECC and High Rel) & High Energy Scan PDF
    MJ8100R Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package Original PDF
    MJ8101 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MJ8101 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MJ8101 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MJ8101 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MJ8101 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MJ8101 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    MJ8101 Semelab Bi-polar Transistors (CECC and High Rel) & High Energy Scan PDF

    MJ810 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MJ8100R Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016)


    Original     		MJ8100R O205AD) 17-Jul-02 PDF

    MJ8100

    Abstract: No abstract text available
    Text: MJ8100 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original     		MJ8100 O205AD) 1-Aug-02 MJ8100 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJ8100 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original     		MJ8100 O205AD) 19-Jun-02 PDF

    MJ8100R

    Abstract: mj810
    Text: MJ8100R Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016)


    Original     		MJ8100R O205AD) 1-Aug-02 MJ8100R mj810 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJ8100R Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016)


    Original     		MJ8100R O205AD) 19-Jun-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJ8100 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original     		MJ8100 O205AD) 17-Jul-02 PDF

    MJE13005A

    Abstract: MJ4361 MJ3237 MJE10001 MJ2901 MJ9000 MJ430 MJE240 MJE4923 MJ2252
    Text: STI Type: MJ13330 Notes: Polarity: NPN Power Dissipation: 175 VCEV: 400 VCEO: 200 ICEV: 400 ICEV A: .25 hFE: 8.0 hFE A: 15 VCE: 1.5 VBE: 1.8 IC: 10 COB: 400 fT: 5.0 Case Style: TO-204AA/TO-3: Industry Type: MJ13330 STI Type: MJ13101 Notes: Polarity: NPN Power Dissipation: 175


    Original     		MJ13330 O-204AA/TO-3: MJ13101 MJ13331 MJ13333 MJE13005A MJ4361 MJ3237 MJE10001 MJ2901 MJ9000 MJ430 MJE240 MJE4923 MJ2252 PDF

    2SB616 NEC

    Abstract: B0952 SOT3323 6u60 2N3185 B0952F
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 20 25 30 35 40 50 60 70 80 200 200 140 140 200 200 400 400 200 200 2SA1469S 2SA1259 B0223 SML3705 SML3728 SML3777 SML3323 SML3327 2N3177 2N3181 2N3185 2N3189 2N3193 2N3197 SOT3723 SOT3723 SOT3723 SOT3731


    Original     		Sol18 O-220AB O-220 OT-186 OT3303 OT3323 2SB616 NEC B0952 SOT3323 6u60 2N3185 B0952F PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    MJ8100

    Abstract: MJ8101
    Text: MJ8100 SILICON MJ8101 5 AM PERE POWER TR A N SISTO R S MEDIUM-POWER PNP SILIC O N TR A N S IS TO R S . . . designed for switching and wide band amplifier applications. • Low Collector-Emitter Saturation Voltage VcE(sat) = 1-2 Vdc (Max) @ lc • 5.0 Amp


    OCR Scan     		MJ8100 MJ8101 MJ8100 MJ8101 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMELAB LTD 37E D Û1331Ô7 DGGGDbO 1 • SMLB m ‘ Î'rîwî. Type No. Reliability Polarity Option MJ900 MJ901 MJ2500 MJ2501 MJ2955 SCREEN SCREEN SCREEN SCREEN CECC PNP PNP PNP PNP PNP MJ3000 MJ3001 MJ3201 HJ3202 MJ3238 SCREEN SCREEN HX-REL HI-REL HI-REL


    OCR Scan     		MJ900 MJ901 MJ2500 MJ2501 MJ2955 MJ3000 MJ3001 MJ3201 HJ3202 MJ3238 PDF

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


    OCR Scan     		111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor PDF

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175 PDF

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


    OCR Scan     		PDF

    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


    OCR Scan     		Z1000 MZ4614 MZ4627 1N4099 M4L3052 M4L3056 1N5158 varactor 36z germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902 PDF

    germanium transistor

    Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
    Text: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types


    OCR Scan     		PDF

    diode t03

    Abstract: MJ150 mj15024 MJ2955 CV9936 T0220H dyv32 MJ15022 MJ802 MJ4502 transistor mj11032
    Text: 4ÔE T> • Ö1331Ö7 000045Ö 7TT SEMELAB ISMLB ] SEMELAB LT]>7V*«i HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code Type Number BYV32-150M-IS0 HR BYV32-2Q0M-IS0 HR I1YV32-200RM-IS0 HR BYV32-50M-IS0 HR BYV34-3ÜOM-ISO HR BYV34-400M-Is0 HR


    OCR Scan     		B1331Ã Q00045Ã BYV32-150M-IS0 BYV32-200M-ISO YV32-200RM-ISO BYV32-50M-IS0 BYV34-300M-IS0 BYV34-400M-Is0 BYV34-500M-Is0 BYW29-100M-Is0 diode t03 MJ150 mj15024 MJ2955 CV9936 T0220H dyv32 MJ15022 MJ802 MJ4502 transistor mj11032 PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    wiring diagram audio amplifier ic 6283

    Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
    Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor


    OCR Scan     		4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838 PDF

    Germanium drift transistor

    Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
    Text: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of


    OCR Scan     		orporation/464 CH-8105 Germanium drift transistor 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor PDF

    2N5339

    Abstract: 2N6191 MJ4646 MJ4647 2N5337 2N5338 2N6193 MJ8100
    Text: POWER TRANSISTORS — BIPOLAR METAL continued TO-39 Package CASE 79-02 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR (Pin 3 connected to case) Resistive Switching lcCont VcEO (sus) Amps Max Volts Min 0.5 300 400 5 Device Type NPN PD (Case) ts tf fT US US


    OCR Scan     		MJ4646 MJ4647 MJ8100 2N5337 2N6191 2N5338 2N5339 2N6193 2N5338 PDF