Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly
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MJE13003-E
MJE13003-E
MJE13003L-E-x-T6S-K
QW-R223-009
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly
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MJE13003-E
MJE13003-E
MJE13003L-E-x-T6S-at
QW-R223-009
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MJE13003
Abstract: MJE-13003
Text: SI SEMICONDUCTORS CO.,LTD. Product specification NPN SILICON POWER TRANSISTOR ●FEATURES: MJE13003 •HIGH VOLTAGE CAPABILITY ■HIGH SWITCHING SPEED ■WIDE SOA ● APPLICATIONS: ■ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■COMPACT FLUORESCENT LAMP
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MJE13003
CTO-126/SOT-82
O-126
OT-82
MJE13003
MJE-13003
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mje13003 equivalent
Abstract: No abstract text available
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
QW-R201-062
mje13003 equivalent
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Untitled
Abstract: No abstract text available
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
QW-R201-062
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2N2222 transistor output curve
Abstract: UTCMJE13003 MJE13003 transistor
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
O-220
QW-R203-017
2N2222 transistor output curve
UTCMJE13003
MJE13003 transistor
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MJE13003
Abstract: MJE-13003 equivalent mje13003 MJE130 N-P-N SILICON POWER TRANSISTORS TO-126
Text: Inchange Semiconductor Product Specification MJE13003 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・High voltage ,high speed APPLICATIONS ・Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/
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MJE13003
O-126
MJE13003
MJE-13003
equivalent mje13003
MJE130
N-P-N SILICON POWER TRANSISTORS TO-126
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MJE13002
Abstract: mje13003 MJE-13002 MJE13002 transistor MJE13002MJE13003
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002 MJE13003 TO-126 Plastic Package Suitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers and Deflection Circuits
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ISO/TS16949
MJE13002
MJE13003
O-126
C-120
MJE13002
13003Rev090502
mje13003
MJE-13002
MJE13002 transistor
MJE13002MJE13003
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Untitled
Abstract: No abstract text available
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
O-220
QW-R203-017
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Untitled
Abstract: No abstract text available
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
QW-R201-062
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mje13003
Abstract: 2n2222 npn switching transistor mje13003 equivalent UTCMJE13003 2N2222 NPN Transistor features
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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Original
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MJE13003
O-126
QW-R204-004
mje13003
2n2222 npn switching transistor
mje13003 equivalent
UTCMJE13003
2N2222 NPN Transistor features
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mje13002
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002 MJE13003 TO-126 Plastic Package Suitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers and
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MJE13002
MJE13003
O-126
C-120
MJE13002
13003Rev090502
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Untitled
Abstract: No abstract text available
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
O-220
QW-R203-017
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Untitled
Abstract: No abstract text available
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
O-126
QW-R204-004
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MJE13003
Abstract: MJE13003 transistor mje13003 equivalent equivalent mje13003 1A 300V TRANSISTOR 2N2222 NPN Transistor features transistor mje13003 1N4933 NPN Transistor 1.5A 5V 2N2222
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .
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MJE13003
O-220
290ns
MJE13003L
MJE13003-x-TA3-F-T
QW-R203-017
MJE13003
MJE13003 transistor
mje13003 equivalent
equivalent mje13003
1A 300V TRANSISTOR
2N2222 NPN Transistor features
transistor mje13003
1N4933
NPN Transistor 1.5A 5V
2N2222
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mje13003
Abstract: MJE-13003 MJE13003 F equivalent mje13003
Text: SavantIC Semiconductor Product Specification MJE13003 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/
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MJE13003
O-126
mje13003
MJE-13003
MJE13003 F
equivalent mje13003
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MJE13003 transistor
Abstract: equivalent mje13003 transistor mje13003 mje13003 equivalent MJE13003 MJE13003L 1.5A 2A coil Driver 1A 300V TRANSISTOR MJE13003L-X-T60-F-K 300V transistor npn 2a
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .
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MJE13003
290ns
O-126
MJE13003L
MJE13003-x-T60-F-Kt
QW-R204-004
MJE13003 transistor
equivalent mje13003
transistor mje13003
mje13003 equivalent
MJE13003
MJE13003L
1.5A 2A coil Driver
1A 300V TRANSISTOR
MJE13003L-X-T60-F-K
300V transistor npn 2a
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MJE13003
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch
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MJE13003
290ns
MJE13003L-x-T60-K
MJE13003G-at
QW-R204-004
MJE13003
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transistor mje13003
Abstract: MJE13003 TO-92
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch
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MJE13003
290ns
MJE13003L-x-T60-K
MJE13003G-x-T60-K
MJE13003L-x-T6C-A-K
MJE13003Gues
QW-R204-004
transistor mje13003
MJE13003 TO-92
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MJE13003
Abstract: TRANSISTOR npn ic 1000ma 2a 100v NPN MJE13003 transistor
Text: MJE13003 NPN SILICON TRANSISTOR FEATURES TO 126 Power dissipation PCM : 1.25 W Tamb=25 1.BASE Collector current 1.5 A ICM : Collector-base voltage V BR CBO : 700 V 2.COLLECTOR 3.EMITTER ELECTRICAL CHARACTERISTICS Tamb=25 Parameter 123 unless otherwise specified
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MJE13003
1000mA
1000mA,
250mA
100mA
MJE13003
TRANSISTOR npn ic 1000ma
2a 100v NPN
MJE13003 transistor
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pin diagram mje13003
Abstract: mje13003 equivalent equivalent mje13003 transistor 2N222 2n222 TRANSISTOR 1N4933 1N5820 2N222 2N2905 MJE13003
Text: MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,
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MJE13003
r14525
MJE13003/D
pin diagram mje13003
mje13003 equivalent
equivalent mje13003
transistor 2N222
2n222 TRANSISTOR
1N4933
1N5820
2N222
2N2905
MJE13003
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MJE13002
Abstract: mje13003 MJE-13002 MJE-13003 Power Transistors TO-126 Case MJE13003-TO-126 13003r
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002 MJE13003 TO-126 Plastic Package Suitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers and
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MJE13002
MJE13003
O-126
C-120
MJE13002
13003Rev090502
mje13003
MJE-13002
MJE-13003
Power Transistors TO-126 Case
MJE13003-TO-126
13003r
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pswt
Abstract: MJE13003 TO-92 NPN Transistor 1.5A 700V
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch
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MJE13003
290ns
MJE13003L-x-T60-K
MJE13003G-x-T60-K
MJE13003L-x-T6C-A-K
MJE13003Gues
QW-R204-004
pswt
MJE13003 TO-92
NPN Transistor 1.5A 700V
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MJE13003 TO-92
Abstract: MJE13003 transistor tr/MJE13006/MJE13003 TO-92
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch
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MJE13003
290ns
QW-R204-004
MJE13003 TO-92
MJE13003 transistor
tr/MJE13006/MJE13003 TO-92
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