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    MJE13003L Search Results

    MJE13003L Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MJE13003L-X-T60-F-K Unisonic Technologies NPN EPITAXIAL SILICON TRANSISTOR Original PDF
    MJE13003L-X-TA3-F-T Unisonic Technologies NPN EPITAXIAL SILICON TRANSISTOR Original PDF

    MJE13003L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJE13003L

    Abstract: to-126 npn switching transistor 400v
    Text: SI SEMICONDUCTORS CO.,LTD. Product specification NPN SILICON POWER TRANSISTOR ●FEATURES: MJE13003L •HIGH SWITCHING SPEED ■WIDE SOA ● APPLICATIONS: SUITABLE FOR 110V CIRCUIT MODE: ■COMPACT FLUORESCENT LAMP ■ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■SWITCH MODE POWER SUPPLIES


    Original     		PDF MJE13003L O-220/126 Pc50/40: O-220/TO-126) O-220 O-126 MJE13003L to-126 npn switching transistor 400v

    pswt

    Abstract: MJE13003 TO-92 NPN Transistor 1.5A 700V
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		PDF MJE13003 290ns MJE13003L-x-T60-K MJE13003G-x-T60-K MJE13003L-x-T6C-A-K MJE13003Gues QW-R204-004 pswt MJE13003 TO-92 NPN Transistor 1.5A 700V

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		PDF MJE13003-E MJE13003-E MJE13003L-E-x-T6S-K QW-R223-009

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		PDF MJE13003-E MJE13003-E MJE13003L-E-x-T6S-K MJE13003G-E-x-T6S-K QW-R223-009

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-H NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		PDF MJE13003-H 290ns MJE13003L-H-x-T60-K MJE130at QW-R223-010

    MJE13003

    Abstract: MJE13003 TO-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		PDF MJE13003 290ns QW-R204-004 MJE13003 MJE13003 TO-92

    2n2222 transistor pin b c e

    Abstract: DATA SHEET OF transistor 2N2222 to-92 transistor mje13003 equivalent mje13003 MJE13003 transistor OF transistor 2N2222 to-92 2n2222 to-92 mje13003 equivalent MJE13003 mje13003l
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.


    Original     		PDF MJE13003 290ns MJE13003L MJE13003G QW-R204-004 2n2222 transistor pin b c e DATA SHEET OF transistor 2N2222 to-92 transistor mje13003 equivalent mje13003 MJE13003 transistor OF transistor 2N2222 to-92 2n2222 to-92 mje13003 equivalent MJE13003 mje13003l

    MJE13003

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		PDF MJE13003 290ns MJE13003L-x-T60-K MJE13003G-at QW-R204-004 MJE13003

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		PDF MJE13003 290ns O-126 MJE13003L QW-R204-004

    transistor mje13003

    Abstract: MJE13003 TO-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		PDF MJE13003 290ns MJE13003L-x-T60-K MJE13003G-x-T60-K MJE13003L-x-T6C-A-K MJE13003Gues QW-R204-004 transistor mje13003 MJE13003 TO-92

    MJE13003

    Abstract: MJE13003 transistor mje13003 equivalent equivalent mje13003 1A 300V TRANSISTOR 2N2222 NPN Transistor features transistor mje13003 1N4933 NPN Transistor 1.5A 5V 2N2222
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		PDF MJE13003 O-220 290ns MJE13003L MJE13003-x-TA3-F-T QW-R203-017 MJE13003 MJE13003 transistor mje13003 equivalent equivalent mje13003 1A 300V TRANSISTOR 2N2222 NPN Transistor features transistor mje13003 1N4933 NPN Transistor 1.5A 5V 2N2222

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		PDF MJE13003 290ns MJE13003-x-x-T60-K MJE13003-x-x-T6C-A-K MJE13003-x-x-T6C-F-K MJE13003-x-x-T92-B MJE13003-x-x-at QW-R204-004

    MJE13003 transistor

    Abstract: equivalent mje13003 transistor mje13003 mje13003 equivalent MJE13003 MJE13003L 1.5A 2A coil Driver 1A 300V TRANSISTOR MJE13003L-X-T60-F-K 300V transistor npn 2a
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		PDF MJE13003 290ns O-126 MJE13003L MJE13003-x-T60-F-Kt QW-R204-004 MJE13003 transistor equivalent mje13003 transistor mje13003 mje13003 equivalent MJE13003 MJE13003L 1.5A 2A coil Driver 1A 300V TRANSISTOR MJE13003L-X-T60-F-K 300V transistor npn 2a

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		PDF MJE13003-P 290ns MJE13003L-P-x-T60-K QW-R204-027

    equivalent mje13003

    Abstract: mje13003 equivalent 2N2222 NPN Transistor to 92 OF transistor 2N2222 to-92 OF transistor 2N2222
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.


    Original     		PDF MJE13003 290ns MJE13003L-x-x-T60-K MJE13003G-x-x-T60-K O-126 MJE13003L-x-x-T6C-A-K QW-R204-004 equivalent mje13003 mje13003 equivalent 2N2222 NPN Transistor to 92 OF transistor 2N2222 to-92 OF transistor 2N2222

    equivalent mje13003

    Abstract: mje13003 equivalent MJE13003-X-T60-F-K MJE13003 TO-92 MJE13003G Transistor 2N2222 NPN TO92 OF transistor 2N2222 to-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.


    Original     		PDF MJE13003 290ns MJE13003L MJE13003G MJE13003L-x-T60-A-K MJE13003L-x-T60-F-lues QW-R204-004 equivalent mje13003 mje13003 equivalent MJE13003-X-T60-F-K MJE13003 TO-92 MJE13003G Transistor 2N2222 NPN TO92 OF transistor 2N2222 to-92

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		PDF MJE13003-E MJE13003-E MJE13003L-E-x-T6S-at QW-R223-009

    MJE13003 TO-92

    Abstract: MJE13003 transistor tr/MJE13006/MJE13003 TO-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		PDF MJE13003 290ns QW-R204-004 MJE13003 TO-92 MJE13003 transistor tr/MJE13006/MJE13003 TO-92

    transistor mje13003

    Abstract: mje13003 to-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		PDF MJE13003 290ns MJE13003L-x-T60-K MJE13003G-x-T60-K MJE13003L-x-T6C-A-K MJE13003Gues QW-R204-004 transistor mje13003 mje13003 to-92

    mje13003x

    Abstract: MJE13003 transistor MJE13003 pswt MJE13003 TO-92 MJE13003l
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		PDF MJE13003 290ns MJE13003L-x-x-T60-K MJE13003G-x-x-T60-K O-126 MJE13003L-ues QW-R204-004 mje13003x MJE13003 transistor MJE13003 pswt MJE13003 TO-92 MJE13003l

    ferroxcube E 40 core

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-R NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		PDF MJE13003-R 290ns MJE13003L-R-x-T92-B QW-R221-022 ferroxcube E 40 core

    MJE13003 TO-92

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		PDF MJE13003 290ns MJE13003L QW-R201-062 MJE13003 TO-92

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		PDF MJE13003-P 290ns MJE13003L-P-x-T60-K MJE13003G-P-x-T60-K MJE13003L-P-x-T6at QW-R204-027

    mje13003 equivalent

    Abstract: MJE13003 MJE13003 TO-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS 1 TO-126 DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		PDF MJE13003 O-126 290ns O-252 O-220 MJE13003L QW-R204-004 mje13003 equivalent MJE13003 MJE13003 TO-92