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    MMIC CODE C7 Search Results

    MMIC CODE C7 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DM7842J/883 Rochester Electronics LLC DM7842J/883 - BCD/Decimal Visit Rochester Electronics LLC Buy
    9310FM Rochester Electronics LLC 9310 - BCD Decade Counter (Mil Temp) Visit Rochester Electronics LLC Buy
    54LS48J/B Rochester Electronics LLC 54LS48 - BCD-to-Seven-Segment Decoders Visit Rochester Electronics LLC Buy
    TLC32044IFK Rochester Electronics LLC PCM Codec, 1-Func, CMOS, CQCC28, CC-28 Visit Rochester Electronics LLC Buy
    TLC32044IN Rochester Electronics LLC PCM Codec, 1-Func, CMOS, PDIP28, PLASTIC, DIP-28 Visit Rochester Electronics LLC Buy

    MMIC CODE C7 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SMD MARKING CODE w2

    Abstract: smd TRANSISTOR code marking w2 marking code C1H SMD circuit diagram of philips PC satellite receiver marking code C1H mmic lc oscillator 30ghz shf schematic circuit 6 pin TRANSISTOR SMD CODE PA GSM intercom circuit diagram vlf metal detector schematic murata smd inductors marking codes
    Text: Appendix RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors Philips Semiconductors RF Manual 5th edition APPENDIX Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright


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    MMIC marking CODE c4

    Abstract: No abstract text available
    Text: GaAs MMIC CGB 241 Target Datasheet ?2 stages Bluetooth InGaP HBT-Power Amplifier ?Single Voltage Supply ?Operating voltage range: 2.0 to 6 V ?Pout = 23dBm at Vd=3.2V


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    PDF 23dBm 16dBm 35dBc IEEE802 06035J1R8BBT LL1608-FS MMIC marking CODE c4

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    Abstract: No abstract text available
    Text: GaAs MMIC CGB 240 Preliminary Datasheet • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V


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    PDF 23dBm 16dBm 40dBc IEEE802

    st 9548

    Abstract: p0603 CGY99 DCS1800 Q62702-G0128 C4 MMIC INFINEON PART MARKING MMIC marking CODE c4
    Text: GaAs MMIC CGY 99 Preliminary Datasheet * Broadband 3-stage Power Amplifier [ 800.2400 Mhz ] * GSM, AMPS, PCN, PCS * Operating voltage range: 2.7 to 6.0 V


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    PDF CGY99 Q62702-G0128 P-TSSOP10-2 st 9548 p0603 CGY99 DCS1800 Q62702-G0128 C4 MMIC INFINEON PART MARKING MMIC marking CODE c4

    JUMPER-0603

    Abstract: CGB98-900 INFINEON PART MARKING infineon marking L2 MMIC marking 81 TSSOP10 CGB98 C4 MMIC siemens inductor 15PF-0603
    Text: GaAs MMIC CGB 98 Preliminary Datasheet * 3-stage GaAs GSM-HBT Power Amplifier *Operating voltage range: 2.7 to 6.0 V * Single supply voltage * Pout = 34.0dBm at Vcc=3.2V


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    PDF /GSM900 CGB98 Q62702G09111 P-TSSOP10-2 JUMPER-0603 CGB98-900 INFINEON PART MARKING infineon marking L2 MMIC marking 81 TSSOP10 CGB98 C4 MMIC siemens inductor 15PF-0603

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC CGB 241 Target Datasheet • • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V


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    PDF 23dBm 16dBm 35dBc IEEE802 06035J1R8BBT LL1608-FS

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC CGB 240 Preliminary Datasheet • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V


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    PDF 23dBm 16dBm 40dBc IEEE802

    murata COG capacitor

    Abstract: INFINEON PART MARKING CGB240 Q62702-G0174 TSSOP10 TRL1 INFINEON package PART MARKING
    Text: GaAs MMIC CGB 240 Preliminary Datasheet • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V


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    PDF 23dBm 16dBm 35dBc IEEE802 murata COG capacitor INFINEON PART MARKING CGB240 Q62702-G0174 TSSOP10 TRL1 INFINEON package PART MARKING

    c4 09 smd marking code

    Abstract: No abstract text available
    Text: GaAs MMIC CGB 240 Datasheet ?2 stages Bluetooth InGaP HBT-Power Amplifier ?Single Voltage Supply ?Operating voltage range: 2.0 to 6 V ?Pout = 23dBm at Vd=3.2V


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    PDF 23dBm 16dBm 35dBc IEEE802 Q62702-G0174 LL1005-FH) TSSOP-10 c4 09 smd marking code

    murata x7r capacitor

    Abstract: murata COG capacitor TSSOP-10 marking H2 5-pin CGB240 Q62702-G0174 TSSOP10 MMIC marking CODE c4 Marking code CGB SMD MARKING code mmic
    Text: GaAs MMIC CGB 240 Datasheet • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V


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    PDF 23dBm 16dBm 35dBc IEEE802 06035J1R8BBT LL1005-FH) TSSOP-10 murata x7r capacitor murata COG capacitor TSSOP-10 marking H2 5-pin CGB240 Q62702-G0174 TSSOP10 MMIC marking CODE c4 Marking code CGB SMD MARKING code mmic

    murata COG capacitor

    Abstract: INFINEON PART MARKING MIRA TECHNOLOGY CGB240 Q62702-G0174 TSSOP10 infineon marking code L2
    Text: GaAs MMIC CGB 240 Datasheet • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V


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    PDF 23dBm 16dBm 35dBc IEEE802 murata COG capacitor INFINEON PART MARKING MIRA TECHNOLOGY CGB240 Q62702-G0174 TSSOP10 infineon marking code L2

    IPC-9501

    Abstract: p0603 CGY98 DCS1800 Q62702-G0079 SCT595 infenion
    Text: GaAs MMIC CGY 98 Datasheet * Broadband Power Amplifier [ 800.2000 Mhz ] * GSM,AMPS or PCN * Operating voltage range: 2.7 to 5.0 V * Pout = 35.0dBm at Vd=3.5V


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    PDF CGY98 Q62702-G0079 SCT595 IPC-9501 p0603 CGY98 DCS1800 Q62702-G0079 SCT595 infenion

    schematic diagram of bluetooth device

    Abstract: INFINEON PART MARKING CGB240 infineon marking code L2 Q62702-G0174 mmic marking L capacitor 22 pf Inductor 22 nH infineon marking L1
    Text: GaAs MMIC CGB240 Preliminary Data Sheet • 2-stage Bluetooth InGaP HBT power amplifier • Single voltage supply 1 • Wide operating voltage range 2.0 - 5.5 V • POUT = 23 dBm at VC = 3.2 V • Overall power added efficiency PAE up to 50% • Analog power control with four power steps


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    PDF CGB240 TSSOP-10-2 Q62702-G0174 CGB240 schematic diagram of bluetooth device INFINEON PART MARKING infineon marking code L2 Q62702-G0174 mmic marking L capacitor 22 pf Inductor 22 nH infineon marking L1

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMPA2060025D 25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


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    PDF CMPA2060025D CMP2060025D CMPA20 CMPA2060025D

    PG311

    Abstract: No abstract text available
    Text: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SMT package • LO Input power range: -7.0 to 0 dBm


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    PDF CMH192 Q62705-K608 VQFN-20 PG311

    Infineon CMH192 GaAs

    Abstract: CMH192 mmic MIXER 210
    Text: GaAs MMIC CMH192 Preliminary Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process IF Out • Leadless 3.5 x 3.5 mm. SMT package • LO Input power range: -9.0 to 0 dBm


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    PDF CMH192 VQFN-20 CMH192 Infineon CMH192 GaAs mmic MIXER 210

    mmic c8

    Abstract: mmic MIXER 210 CMH192 LNA marking A mmic code marking P 18 mmic marking code P 18 mmic code c8 mmic code c7 H-192 Q62705-K608
    Text: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/M ixer IC for use in US and Korean band CDM A Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SM T package • LO Input power range: -7.0 to 0 dBm


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    PDF CMH192 Q62705-K608 VQFN-20 10ability CMH192 mmic c8 mmic MIXER 210 LNA marking A mmic code marking P 18 mmic marking code P 18 mmic code c8 mmic code c7 H-192 Q62705-K608

    k608

    Abstract: MMIC marking CODE c4 CMH192 GRP1555C7H100JZ01 mmic marking L MMIC CODE c4
    Text: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SMT package • LO Input power range: -7.0 to 0 dBm


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    PDF CMH192 Q62705-K608 VQFN-20 k608 MMIC marking CODE c4 CMH192 GRP1555C7H100JZ01 mmic marking L MMIC CODE c4

    CAP 0402

    Abstract: GaAs FET amplifer mmic marking c8 GaAs FET amplifer chip CMH0819 VQFN-24 MMIC marking code 132 MMIC marking code 101 mmic code marking P 18 mmic c8
    Text: GaAs MMIC CMH0819 • High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports • Integrated bypass switch for LNAs CDMA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LNA • LO Input power range: -7.0 to 0 dBm


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    PDF CMH0819 VQFN-24 CMH0819 CAP 0402 GaAs FET amplifer mmic marking c8 GaAs FET amplifer chip VQFN-24 MMIC marking code 132 MMIC marking code 101 mmic code marking P 18 mmic c8

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    Abstract: No abstract text available
    Text: GaAs MMIC CGB240B Preliminary Data Sheet • 2-stage InGaP HBT power amplifier for WLAN and Bluetooth applications • ACPR / IP3 tested to be compliant with IEEE802.11b standard • Fully compliant with Bluetooth requirements dual-mode use • Single voltage supply


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    PDF CGB240B IEEE802 CGB240B BluetooCGB240B P-TSSOP-10-2 TSSOP10 Version01 J-STD-033

    capacitor 22 pf

    Abstract: TriQuint PACKING IEEE802.11b standard 0402CS-1N0X CGB240B J-STD-033 TSSOP10 capacitor 2.2 PF mmic c8 murata x7r
    Text: GaAs MMIC CGB240B Preliminary Data Sheet • 2-stage InGaP HBT power amplifier for WLAN and Bluetooth applications • ACPR / IP3 tested to be compliant with IEEE802.11b standard • Fully compliant with Bluetooth requirements dual-mode use • Single voltage supply


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    PDF CGB240B IEEE802 P-TSSOP-10-2 CGB240B P-TSSOP-10-2 TSSOP10 Version01 capacitor 22 pf TriQuint PACKING IEEE802.11b standard 0402CS-1N0X J-STD-033 capacitor 2.2 PF mmic c8 murata x7r

    CMPA5585025D

    Abstract: vd2b
    Text: CMPA5585025D 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMP5585025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher


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    PDF CMPA5585025D CMP5585025D CMPA5585025D vd2b

    Untitled

    Abstract: No abstract text available
    Text: CMY191 GaAs MMIC Preliminary Datasheet • • • • • • • • Ultralinear Mixer with integrated high IP3i LNA and LO-Buffer for PCS CDMA receiver applications.


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    PDF CMY191 24dBm. 96GHz;

    Untitled

    Abstract: No abstract text available
    Text: S M P - 1 2 1 3 4 Bit Digital Attenuator 1, 2, 4, & 8 dB Bits S s m îü s s H ! : r o ‘. v fiv s Sem iconductor A pril 1 9 9 6 DC • 3.0G H z Description rj« hiv.- • : ■. s r.'j" pcriormance Gallium Arsenide GaAs Monolithic Microwave Integrated Circuit (MMIC)


    OCR Scan
    PDF SMP-12103 BOO/664-2748 Tb4142