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    MMJT9410G Search Results

    MMJT9410G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMJT9410G On Semiconductor TRANS GP BJT NPN 30V 3A 3SOT-223 Original PDF

    MMJT9410G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MMJT9410

    Abstract: MMJT9410G
    Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com • High DC Current Gain − • • • • • POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS


    Original
    MMJT9410 OT-223 MMJT9410/D MMJT9410 MMJT9410G PDF

    MMJT9410

    Abstract: MMJT9410G
    Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − • • • • • • http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc High DC Current Gain − hFE = 85 (Min) @ IC = 0.8 Adc


    Original
    MMJT9410 OT-223 MMJT9410/D MMJT9410 MMJT9410G PDF

    Untitled

    Abstract: No abstract text available
    Text: MMJT9410 Bipolar Power Transistors NPN Silicon Features • SOT−223 Surface Mount Packaging • Epoxy Meets UL 94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant http://onsemi.com POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.2 VOLTS


    Original
    MMJT9410 OT-223 MMJT9410/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com • High DC Current Gain − • • • • • POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS


    Original
    MMJT9410 MMJT9410/D PDF