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    MOS 40V Search Results

    MOS 40V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
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    MOS 40V Price and Stock

    Advantech Co Ltd MOS-4140V-Y1101

    Video Modules
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    Mouser Electronics MOS-4140V-Y1101
    • 1 $205
    • 10 $205
    • 100 $205
    • 1000 $205
    • 10000 $205
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    MOS 40V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: APT20M20JFLL 200V 104A 0.020Ω POWER MOS 7 R Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS ON ® and Qg. Power MOS 7 combines lower conduction and switching losses


    Original     		APT20M20JFLL OT-227 PDF

    APT20M20JFLL

    Abstract: No abstract text available
    Text: APT20M20JFLL 200V 104A 0.020Ω POWER MOS 7 R Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS ON ® and Qg. Power MOS 7 combines lower conduction and switching losses


    Original     		APT20M20JFLL OT-227 APT20M20JFLL PDF

    APT20M22LVR

    Abstract: No abstract text available
    Text: APT20M22LVR 200V 100A 0.022Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT20M22LVR O-264 O-264 APT20M22LVR PDF

    APT20M22LVR

    Abstract: No abstract text available
    Text: APT20M22LVR 200V 100A 0.022Ω POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    Original     		APT20M22LVR O-264 O-264 APT20M22LVR PDF

    APT20M11JLL

    Abstract: 2815 rc
    Text: APT20M11JLL 200V 176A 0.011Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT20M11JLL OT-227 APT20M11JLL 2815 rc PDF

    218F

    Abstract: APT20M20B2LL APT20M20LLL
    Text: APT20M20B2LL APT20M20LLL 200V 100A 0.020Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT20M20B2LL APT20M20LLL O-264 O-264 O-247 218F APT20M20B2LL APT20M20LLL PDF

    APT20M22JVR

    Abstract: No abstract text available
    Text: APT20M22JVR 97A 0.022Ω 200V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT20M22JVR OT-227 E145592 APT20M22JVR PDF

    tc 3086

    Abstract: APT20M40HLL
    Text: APT20M40HLL 200V 50A 0.040Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT20M40HLL O-258 O-258 tc 3086 APT20M40HLL PDF

    APT20M13PVR

    Abstract: No abstract text available
    Text: APT20M13PVR 200V 120A 0.013Ω Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT20M13PVR APT20M13PVR PDF

    APT20M22LVFR

    Abstract: APT20M22LVR
    Text: APT20M22LVFR 200V 100A 0.022Ω POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT20M22LVFR O-264 O-264 APT20M22LVR APT20M22LVFR APT20M22LVR PDF

    APT20M19JVR

    Abstract: No abstract text available
    Text: APT20M19JVR 200V 112A 0.019Ω POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT20M19JVR OT-227 E145592 APT20M19JVR PDF

    APT20M45BVFR

    Abstract: No abstract text available
    Text: APT20M45BVFR 200V POWER MOS V 56A 0.045Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT20M45BVFR O-247 O-247 APT20M45BVFR PDF

    To267

    Abstract: No abstract text available
    Text: APT20M26WVR 65A 0.026Ω 200V POWER MOS V TO-267 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT20M26WVR O-267 O-267 To267 PDF

    APT20M20JLL

    Abstract: No abstract text available
    Text: APT20M20JLL 200V 104A 0.020Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT20M20JLL OT-227 APT20M20JLL PDF

    APT20M22JVR

    Abstract: ISOTOP
    Text: APT20M22JVR 97A 0.022Ω 200V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT20M22JVR OT-227 E145592 APT20M22JVR ISOTOP PDF

    Untitled

    Abstract: No abstract text available
    Text: APT20M11JVR 200V 175A 0.011Ω POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT20M11JVR OT-227 E145592 PDF

    APT20M45SVFR

    Abstract: No abstract text available
    Text: APT20M45SVFR 200V POWER MOS V 56A 0.045Ω FREDFET D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT20M45SVFR APT20M45SVFR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT20M20B2LL APT20M20LLL 200V 100A 0.020Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT20M20B2LL APT20M20LLL O-264 O-264 O-247 PDF

    APT20M11JLL

    Abstract: No abstract text available
    Text: APT20M11JLL 200V 176A 0.011Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT20M11JLL OT-227 APT20M11JLL PDF

    omron reed relay

    Abstract: OMRON RELAY MY4N-220V AC G3VM-41GR5 omron relay G3VM-21GR1 OMRON RELAY MY4N-20V AC relay footprints triac module omron G3VM-21GR G3VM-21LR
    Text: G3VM Series MOS FET Relays Look at the biggest thing in MOS FET relays SOLID STATE PERFORMANCE & ACCURACY SMALLEST SIZE IN THE INDUSTRY LOWEST POWER REQUIREMENTS First in Relays ON Resistance: 1 ohm, Output Capacity: 1 pF All from the industry’s smallest MOS FET relays


    Original     		6/04/5M J02I-E-01 omron reed relay OMRON RELAY MY4N-220V AC G3VM-41GR5 omron relay G3VM-21GR1 OMRON RELAY MY4N-20V AC relay footprints triac module omron G3VM-21GR G3VM-21LR PDF

    APT20M36BFLL

    Abstract: APT20M36SFLL APT60DS30
    Text: APT20M36BFLL APT20M36SFLL 200V 65A 0.036Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT20M36BFLL APT20M36SFLL O-247 O-247 APT20M36BFLL APT20M36SFLL APT60DS30 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT20M11JLL 200V 176A 0.011Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT20M11JLL OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT20M42HVR 200V 50A 0.042W POWER MOS V TO-258 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT20M42HVR O-258 O-258 PDF

    APT20M38BVFR

    Abstract: No abstract text available
    Text: APT20M38BVFR 200V POWER MOS V 67A 0.038Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT20M38BVFR O-247 O-247 APT20M38BVFR PDF