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    MOSFET J50 Search Results

    MOSFET J50 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET J50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J50 mosfet

    Abstract: J119 fet transistor k 2723 J892 J168 J119 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.


    Original     		PDF MRF136 MRF136 AN215A. J50 mosfet J119 fet transistor k 2723 J892 J168 J119 transistor

    Untitled

    Abstract: No abstract text available
    Text: Quasi-Resonant Controllers with Integrated Power MOSFET STR-Y6700 Series General Descriptions Package The STR-Y6700 series are power ICs for switching power supplies, incorporating a MOSFET and a quasi-resonant controller IC. Including an auto standby function in the controller,


    Original     		PDF STR-Y6700 O220F-7L

    hf class AB power amplifier mosfet

    Abstract: Triode 805 motorola diode 8296 1N5925A AN211A AN215A AN721 MRF136 J973
    Text: Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.


    Original     		PDF MRF136/D MRF136 hf class AB power amplifier mosfet Triode 805 motorola diode 8296 1N5925A AN211A AN215A AN721 MRF136 J973

    MRF136

    Abstract: zener motorola 1N5925A AN211A AN215A AN721 j331 s1170 MRF1364 MOTOROLA S 5068
    Text: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.


    Original     		PDF MRF136/D MRF136 MRF136 zener motorola 1N5925A AN211A AN215A AN721 j331 s1170 MRF1364 MOTOROLA S 5068

    planar transformer theory

    Abstract: TH D560 AN721 18006-1-Q1 AN215A mosfet HF amplifier motorola diode 8296 1N4740 319B AN211A
    Text: Order this document by MRF136Y/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF136Y N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.


    Original     		PDF MRF136Y/D MRF136Y planar transformer theory TH D560 AN721 18006-1-Q1 AN215A mosfet HF amplifier motorola diode 8296 1N4740 319B AN211A

    JFET TRANSISTOR REPLACEMENT GUIDE j201

    Abstract: J201 spice J108 SOT-23 FET DATASHEET OF TRANSISTOR 2N5485 JFET TRANSISTOR REPLACEMENT GUIDE Direct replacement to LH0033 FET equivalent of 2N4352 2N4352 FET EQUIVALENT s0 sot-23 mosfet U402 N CHANNEL FET
    Text: LLC 2002 Short Form Catalog ANALOG SOLUTIONS: Amplifiers & Buffers Power Management MOSFETs High Speed Lateral & Vertical DMOS Switches & MOSFETs JFETs MOSFET Drivers Custom Solutions Calogic LLC, 237 Whitney Place, Fremont, CA 94539 • http://www.calogic.net


    Original     		PDF OT-23 JFET TRANSISTOR REPLACEMENT GUIDE j201 J201 spice J108 SOT-23 FET DATASHEET OF TRANSISTOR 2N5485 JFET TRANSISTOR REPLACEMENT GUIDE Direct replacement to LH0033 FET equivalent of 2N4352 2N4352 FET EQUIVALENT s0 sot-23 mosfet U402 N CHANNEL FET

    MRF136

    Abstract: mrf136y amplifier 18006-1-Q1 class A push pull power amplifier mrf136y design rf push pull mosfet power amplifier zener motorola 1N4740 1N5925A 319B
    Text: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 MRF136Y N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large–signal amplifier and oscillator applications up


    Original     		PDF MRF136/D MRF136 MRF136Y MRF136 MRF136/D* mrf136y amplifier 18006-1-Q1 class A push pull power amplifier mrf136y design rf push pull mosfet power amplifier zener motorola 1N4740 1N5925A 319B

    J852

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 MRF136Y N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large–signal amplifier and oscillator applications up


    Original     		PDF MRF136/D MRF136 MRF136Y MRF136Y MRF136/D J852

    transistor motorola 359

    Abstract: Triode 805 AN721 808 power Triode Beckman Industrial zener motorola 1N5925A AN215A MRF134
    Text: MOTOROLA Order this document by MRF134/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF134 N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range.


    Original     		PDF MRF134/D MRF134 MRF134/D* transistor motorola 359 Triode 805 AN721 808 power Triode Beckman Industrial zener motorola 1N5925A AN215A MRF134

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    6a3 diode zener

    Abstract: 6a3 zener MRF136 zener motorola 1N5925A AN211A AN215A AN721 motorola MRF136 j331
    Text: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.


    Original     		PDF MRF136/D MRF136 6a3 diode zener 6a3 zener MRF136 zener motorola 1N5925A AN211A AN215A AN721 motorola MRF136 j331

    527 MOSFET TRANSISTOR motorola

    Abstract: vk200* FERROXCUBE MRF134 SELF vk200 Beckman resistor network mrf134 motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MRF134 . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance


    Original     		PDF MRF134 MRF134 AN215A 527 MOSFET TRANSISTOR motorola vk200* FERROXCUBE SELF vk200 Beckman resistor network mrf134 motorola

    J50 mosfet

    Abstract: UF2810P 700J1
    Text: UF2810P RF Power MOSFET Transistor 10W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration


    Original     		PDF UF2810P J50 mosfet UF2810P 700J1

    MRF174

    Abstract: "RF MOSFETs" 1N5925A AN211A AN721 RF MOSFETs motorola bipolar transistor data manual
    Text: MOTOROLA Order this document by MRF174/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF174 N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.


    Original     		PDF MRF174/D MRF174 MRF174/D* MRF174 "RF MOSFETs" 1N5925A AN211A AN721 RF MOSFETs motorola bipolar transistor data manual

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF171/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF171 N–Channel Enhancement–Mode . . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.


    Original     		PDF MRF171/D MRF171 MRF171/D*

    2n4416 transistor spice

    Abstract: low noise dual P-Channel JFET 3N190 P-Channel Depletion Mode FET dual gate n-channel mosfet transistor 2n3955 transistor spice single HIGH SPEED POWER MOSFET intersil JFET TO 18 3N191 SPICE n-channel mosfet transistor low power
    Text: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ±10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF 1 TO-78 BOTTOM VIEW C ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 3N190 3N191 3N190 3N191 300mW 525mW 2n4416 transistor spice low noise dual P-Channel JFET P-Channel Depletion Mode FET dual gate n-channel mosfet transistor 2n3955 transistor spice single HIGH SPEED POWER MOSFET intersil JFET TO 18 3N191 SPICE n-channel mosfet transistor low power

    U401 mosfet

    Abstract: 3N163 SPICE P-Channel Depletion Mode FET a7 P-CHANNEL FET J506 "Dual npn Transistor" 2N3955 LS301 J201 N-channel JFET to 90 J201 spice
    Text: 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage


    Original     		PDF 3N163, 3N164 3N163 3N164 375mW -30ithic U401 mosfet 3N163 SPICE P-Channel Depletion Mode FET a7 P-CHANNEL FET J506 "Dual npn Transistor" 2N3955 LS301 J201 N-channel JFET to 90 J201 spice

    "RF MOSFETs"

    Abstract: motorola bipolar transistor data manual AN721 J50 mosfet arco zener motorola 1N5925A AN211A MRF174
    Text: MOTOROLA Order this document by MRF174/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF174 N–Channel Enhancement–Mode . . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.


    Original     		PDF MRF174/D MRF174 MRF174/D* "RF MOSFETs" motorola bipolar transistor data manual AN721 J50 mosfet arco zener motorola 1N5925A AN211A MRF174

    RF POWER VERTICAL MOSFET 1000 w

    Abstract: J50 mosfet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF174 N–Channel Enhancement–Mode . . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc


    Original     		PDF MRF174 MRF174. AN721, MRF174 RF POWER VERTICAL MOSFET 1000 w J50 mosfet

    4q diode sot23

    Abstract: MARKING tAN SOT-23 IRLML6302 marking smd marking YE MARKING tAN SOT-23 diode
    Text: International IQR Rectifier PD - 9.1259C IRLML6302 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • P-Channel MOSFET • SOT-23 Footprint • Low Profile <1.1mm • Available in Tape and Reel • Fast Switching


    OCR Scan     		PDF OT-23 1259C IRLML6302 4q diode sot23 MARKING tAN SOT-23 IRLML6302 marking smd marking YE MARKING tAN SOT-23 diode

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1259A International SÜIRectifier IRLML6302 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • P-Channel MOSFET • SOT-23 Footprint • Low Profile <1.1 mm • Available in Tape and Reel • Fast Switching


    OCR Scan     		PDF IRLML6302 OT-23 4AS54S2 002bbflà 4BS5452

    Motorola AN211

    Abstract: motorola 6810 aN211 MOTorola atc 7515
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance


    OCR Scan     		PDF MRF134 68-ohm AN215Afor Motorola AN211 motorola 6810 aN211 MOTorola atc 7515

    transistor KA 7808

    Abstract: RF134
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal am plifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance


    OCR Scan     		PDF MRF134 transistor KA 7808 RF134

    IRF9530

    Abstract: IRF9530 mosfet IRF953Q 25Q 328 320G k17c IRF9530 international
    Text: PD-9.320G International S Rectifier IRF9530 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = -100V ^DS on = 0.30Q


    OCR Scan     		PDF IRF9530 O-220 -100V IRF9530 IRF9530 mosfet IRF953Q 25Q 328 320G k17c IRF9530 international