AN569
Abstract: MTY16N80E
Text: MOTOROLA Order this document by MTY16N80E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY16N80E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 16 AMPERES 800 VOLTS
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MTY16N80E
MTY16N80E/D*
AN569
MTY16N80E
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AN569
Abstract: MTP4N80E MTP4N80
Text: MOTOROLA Order this document by MTP4N80E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP4N80E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS
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MTP4N80E/D
MTP4N80E
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AN569
MTP4N80E
MTP4N80
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AN569
Abstract: MTP4N80E
Text: MOTOROLA Order this document by MTP4N80E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. Power Field Effect Transistor MTP4N80E Motorola Preferred Device N−Channel Enhancement−Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS
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MTP4N80E/D
MTP4N80E
MTP4N80E/D*
AN569
MTP4N80E
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MTW7N80E
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTW7N80E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 With Isolated Mounting Hole Designer's MTW7N80E Motorola Preferred Device TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS on = 1.0 OHM
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MTW7N80E/D
O-247
MTW7N80E
MTW7N80E/D*
MTW7N80E
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418C
Abstract: AN569 MTB4N80E1
Text: MOTOROLA Order this document by MTB4N80E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview TMOS E−FET. High Energy Power FET D2PAK−SL Straight Lead MTB4N80E1 Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N−Channel Enhancement−Mode Silicon Gate
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MTB4N80E1
418C
AN569
MTB4N80E1
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418C
Abstract: AN569 MTB4N80E1
Text: MOTOROLA Order this document by MTB4N80E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB4N80E1 TMOS E-FET. High Energy Power FET D2PAK-SL Straight Lead Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N–Channel Enhancement–Mode Silicon Gate
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MTB4N80E1
418C
AN569
MTB4N80E1
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motorola mosfet MTP6N60E
Abstract: MTP6N60E MTP6N6 AN569
Text: MOTOROLA Order this document by MTP6N60E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP6N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 6.0 AMPERES 600 VOLTS
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MTP6N60E/D
MTP6N60E
motorola mosfet MTP6N60E
MTP6N60E
MTP6N6
AN569
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MTP3N6
Abstract: MTP3N60E 2N3904 AN569 tl 2N3904 TRANSISTOR
Text: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP3N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS
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MTP3N60E/D
MTP3N60E
MTP3N6
MTP3N60E
2N3904
AN569
tl 2N3904 TRANSISTOR
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NT 407 F TRANSISTOR TO 220
Abstract: NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR MGP20N35CL
Text: MOTOROLA Order this document by MGP20N35CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N35CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.8 VOLTS 350 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
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MGP20N35CL/D
MGP20N35CL
NT 407 F TRANSISTOR TO 220
NT 407 F MOSFET TRANSISTOR
NT 407 F TRANSISTOR
MGP20N35CL
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pd 223
Abstract: AN569 MTU20N40E motorola MOSFET 935
Text: MOTOROLA Order this document by MTU20N40E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTU20N40E N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 20 AMPERES 400 VOLTS RDS on = 0.19 OHM This high voltage MOSFET uses an advanced termination
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MTU20N40E
pd 223
AN569
MTU20N40E
motorola MOSFET 935
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AN569
Abstract: IRF530
Text: MOTOROLA Order this document by IRF530/D SEMICONDUCTOR TECHNICAL DATA Product Preview IRF530 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.140 W This advanced TMOS power FET is designed to withstand high
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IRF530/D
IRF530
AN569
IRF530
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NT 407 F TRANSISTOR TO 220
Abstract: MOTOROLA TRANSISTOR T2 NT 407 F MOSFET TRANSISTOR MGP20N40CL 632 transistor motorola mosfet ignition coil NT 407 F TRANSISTOR
Text: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
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MGP20N40CL/D
MGP20N40CL
NT 407 F TRANSISTOR TO 220
MOTOROLA TRANSISTOR T2
NT 407 F MOSFET TRANSISTOR
MGP20N40CL
632 transistor motorola
mosfet ignition coil
NT 407 F TRANSISTOR
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MTB4N80E
Abstract: AN569 SMD310 824 mosfet
Text: MOTOROLA Order this document by MTB4N80E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB4N80E Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N–Channel Enhancement–Mode Silicon Gate
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MTB4N80E
AN569
SMD310
824 mosfet
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motorola an569 thermal
Abstract: mosfet transistor 400 volts.100 amperes
Text: MOTOROLA Order this document by MTB4N80E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. High Energy Power FET D2PAK for Surface Mount MTB4N80E Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N−Channel Enhancement−Mode Silicon Gate
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MTB4N80E/D
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MTB4N80E/D*
motorola an569 thermal
mosfet transistor 400 volts.100 amperes
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AN569
Abstract: MTP2P50E
Text: MOTOROLA Order this document by MTP2P50E/D SEMICONDUCTOR TECHNICAL DATA MTP2P50E Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS on = 6.0 OHM P–Channel Enhancement–Mode Silicon Gate
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MTP2P50E
AN569
MTP2P50E
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MTD1N80E
Abstract: AN569 SMD310
Text: MOTOROLA Order this document by MTD1N80E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. Power Field Effect Transistor DPAK for Surface Mount MTD1N80E Motorola Preferred Device TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS on = 12 OHM
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AN569
SMD310
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UC3845BN USED CIRCUIT
Abstract: MBR370 UC3845BN AN1327 AN569 MOC8102 MTP3N120E MUR430 MTP3N120E-D mosfet transistor 800 volts.400 amperes
Text: MOTOROLA Order this document by MTP3N120E/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP3N120E TMOS E-FET. Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1200 VOLTS
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MTP3N120E/D
MTP3N120E
UC3845BN USED CIRCUIT
MBR370
UC3845BN
AN1327
AN569
MOC8102
MTP3N120E
MUR430
MTP3N120E-D
mosfet transistor 800 volts.400 amperes
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AN569
Abstract: MTD1N80E SMD310
Text: MOTOROLA Order this document by MTD1N80E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD1N80E Motorola Preferred Device TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS on = 12 OHM N–Channel Enhancement–Mode Silicon Gate
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MTD1N80E/D*
AN569
MTD1N80E
SMD310
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418C
Abstract: AN569 MTB6N60E1
Text: MOTOROLA Order this document by MTB6N60E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB6N60E1 TMOS E-FET. High Energy Power FET D2PAK-SL Straight Lead Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS on = 1.2 OHM N–Channel Enhancement–Mode Silicon Gate
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MTB6N60E1
418C
AN569
MTB6N60E1
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2N3904
Abstract: AN569 MTP3N60E
Text: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP3N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS
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MTP3N60E/D
MTP3N60E
MTP3N60E/D*
2N3904
AN569
MTP3N60E
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AN569
Abstract: IRF530
Text: MOTOROLA Order this document by IRF530/D SEMICONDUCTOR TECHNICAL DATA Advance Information IRF530 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.16 W This advanced TMOS power FET is designed to withstand high
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IRF530/D
IRF530
AN569
IRF530
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mtw14n50
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTW14N50E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW14N50E Motorola Preferred Device TMOS POWER FET 14 AMPERES 500 VOLTS RDS on = 0.40 OHM
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O-247
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MTW14N50E/D*
TransistorMTW14N50E/D
mtw14n50
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S 170 MOSFET TRANSISTOR
Abstract: TB-547 TO247 package
Text: MOTOROLA Order this document by MTW6N100E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 With Isolated Mounting Hole Designer's MTW6N100E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS on = 1.5 OHM
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MTW6N100E/D
O-247
MTW6N100E
MTW6N100E/D*
TransistorMTW6N100E/D
S 170 MOSFET TRANSISTOR
TB-547
TO247 package
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AN569
Abstract: MTW16N40E
Text: MOTOROLA Order this document by MTW16N40E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW16N40E Motorola Preferred Device TMOS POWER FET 16 AMPERES 400 VOLTS RDS on = 0.24 OHM
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O-247
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AN569
MTW16N40E
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