AN569
Abstract: MTP4N80E MTP4N80
Text: MOTOROLA Order this document by MTP4N80E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP4N80E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS
|
Original
|
PDF
|
MTP4N80E/D
MTP4N80E
MTP4N80E/D*
AN569
MTP4N80E
MTP4N80
|
AN569
Abstract: MTY16N80E
Text: MOTOROLA Order this document by MTY16N80E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY16N80E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 16 AMPERES 800 VOLTS
|
Original
|
PDF
|
MTY16N80E/D
MTY16N80E
MTY16N80E/D*
AN569
MTY16N80E
|
AN569
Abstract: MTP4N80E
Text: MOTOROLA Order this document by MTP4N80E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. Power Field Effect Transistor MTP4N80E Motorola Preferred Device N−Channel Enhancement−Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS
|
Original
|
PDF
|
MTP4N80E/D
MTP4N80E
MTP4N80E/D*
AN569
MTP4N80E
|
MTW7N80E
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTW7N80E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 With Isolated Mounting Hole Designer's MTW7N80E Motorola Preferred Device TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS on = 1.0 OHM
|
Original
|
PDF
|
MTW7N80E/D
O-247
MTW7N80E
MTW7N80E/D*
MTW7N80E
|
418C
Abstract: AN569 MTB4N80E1
Text: MOTOROLA Order this document by MTB4N80E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview TMOS E−FET. High Energy Power FET D2PAK−SL Straight Lead MTB4N80E1 Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N−Channel Enhancement−Mode Silicon Gate
|
Original
|
PDF
|
MTB4N80E1/D
MTB4N80E1
418C
AN569
MTB4N80E1
|
418C
Abstract: AN569 MTB4N80E1
Text: MOTOROLA Order this document by MTB4N80E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB4N80E1 TMOS E-FET. High Energy Power FET D2PAK-SL Straight Lead Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N–Channel Enhancement–Mode Silicon Gate
|
Original
|
PDF
|
MTB4N80E1/D
MTB4N80E1
418C
AN569
MTB4N80E1
|
motorola mosfet MTP6N60E
Abstract: MTP6N60E MTP6N6 AN569
Text: MOTOROLA Order this document by MTP6N60E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP6N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 6.0 AMPERES 600 VOLTS
|
Original
|
PDF
|
MTP6N60E/D
MTP6N60E
motorola mosfet MTP6N60E
MTP6N60E
MTP6N6
AN569
|
418C
Abstract: AN569 MTB6N60E1
Text: MOTOROLA Order this document by MTB6N60E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB6N60E1 TMOS E-FET. High Energy Power FET D2PAK-SL Straight Lead Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS on = 1.2 OHM N–Channel Enhancement–Mode Silicon Gate
|
Original
|
PDF
|
MTB6N60E1/D
MTB6N60E1
418C
AN569
MTB6N60E1
|
MTP3N6
Abstract: MTP3N60E 2N3904 AN569 tl 2N3904 TRANSISTOR
Text: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP3N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS
|
Original
|
PDF
|
MTP3N60E/D
MTP3N60E
MTP3N6
MTP3N60E
2N3904
AN569
tl 2N3904 TRANSISTOR
|
pd 223
Abstract: AN569 MTU20N40E motorola MOSFET 935
Text: MOTOROLA Order this document by MTU20N40E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTU20N40E N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 20 AMPERES 400 VOLTS RDS on = 0.19 OHM This high voltage MOSFET uses an advanced termination
|
Original
|
PDF
|
MTU20N40E/D
MTU20N40E
pd 223
AN569
MTU20N40E
motorola MOSFET 935
|
S 170 MOSFET TRANSISTOR
Abstract: TB-547 TO247 package
Text: MOTOROLA Order this document by MTW6N100E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 With Isolated Mounting Hole Designer's MTW6N100E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS on = 1.5 OHM
|
Original
|
PDF
|
MTW6N100E/D
O-247
MTW6N100E
MTW6N100E/D*
TransistorMTW6N100E/D
S 170 MOSFET TRANSISTOR
TB-547
TO247 package
|
MTB4N80E
Abstract: AN569 SMD310 824 mosfet
Text: MOTOROLA Order this document by MTB4N80E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB4N80E Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N–Channel Enhancement–Mode Silicon Gate
|
Original
|
PDF
|
MTB4N80E/D
MTB4N80E
MTB4N80E/D*
MTB4N80E
AN569
SMD310
824 mosfet
|
motorola an569 thermal
Abstract: mosfet transistor 400 volts.100 amperes
Text: MOTOROLA Order this document by MTB4N80E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. High Energy Power FET D2PAK for Surface Mount MTB4N80E Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N−Channel Enhancement−Mode Silicon Gate
|
Original
|
PDF
|
MTB4N80E/D
MTB4N80E/D
MTB4N80E/D*
motorola an569 thermal
mosfet transistor 400 volts.100 amperes
|
mosfet transistor 400 volts.100 amperes
Abstract: mtp2p
Text: MOTOROLA Order this document by MTP2P50E/D SEMICONDUCTOR TECHNICAL DATA MTP2P50E Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS on = 6.0 OHM P–Channel Enhancement–Mode Silicon Gate
|
Original
|
PDF
|
MTP2P50E/D
MTP2P50E
MTP2P50E/D
mosfet transistor 400 volts.100 amperes
mtp2p
|
|
|
AN569
Abstract: MTP40N10E ad 152 transistor
Text: MOTOROLA Order this document by MTP40N10E/D SEMICONDUCTOR TECHNICAL DATA Advance Data Sheet MTP40N10E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 40 AMPERES 100 VOLTS RDS on = 0.04 OHM This advanced TMOS E–FET is designed to withstand high
|
Original
|
PDF
|
MTP40N10E/D
MTP40N10E
AN569
MTP40N10E
ad 152 transistor
|
MTD1N80E
Abstract: AN569 SMD310
Text: MOTOROLA Order this document by MTD1N80E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. Power Field Effect Transistor DPAK for Surface Mount MTD1N80E Motorola Preferred Device TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS on = 12 OHM
|
Original
|
PDF
|
MTD1N80E/D
MTD1N80E
MTD1N80E/D*
MTD1N80E
AN569
SMD310
|
motorola 549 diode
Abstract: diode Fr 10e AN569 MTB75N05HD
Text: MOTOROLA Order this document by MTB75N05HD/D SEMICONDUCTOR TECHNICAL DATA HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount MTB75N05HD Motorola Preferred Device TMOS POWER FET 75 AMPERES 50 VOLTS RDS on = 9.5 mΩ N–Channel Enhancement–Mode Silicon Gate
|
Original
|
PDF
|
MTB75N05HD/D
MTB75N05HD
motorola 549 diode
diode Fr 10e
AN569
MTB75N05HD
|
IRF540 motorola
Abstract: irf540 for pwm IRF540 application irf540 "27 MHz" IRF540 u c transistor irf540 27 MHz mosfet transistor 400 volts.100 amperes
Text: MOTOROLA Order this document by IRF540/D SEMICONDUCTOR TECHNICAL DATA Product Preview IRF540 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 27 AMPERES 100 VOLTS RDS on = 0.070 OHMS This advanced TMOS power FET is designed to withstand high
|
Original
|
PDF
|
IRF540/D
IRF540
IRF540 motorola
irf540 for pwm
IRF540 application
irf540 "27 MHz"
IRF540
u c transistor
irf540 27 MHz
mosfet transistor 400 volts.100 amperes
|
AN569
Abstract: MTD1N80E SMD310
Text: MOTOROLA Order this document by MTD1N80E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD1N80E Motorola Preferred Device TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS on = 12 OHM N–Channel Enhancement–Mode Silicon Gate
|
Original
|
PDF
|
MTD1N80E/D
MTD1N80E
MTD1N80E/D*
AN569
MTD1N80E
SMD310
|
AN569
Abstract: MTW8N60E DSA00109376 ad 153 transistor
Text: MOTOROLA Order this document by MTW8N60E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW8N60E Motorola Preferred Device TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS on = 0.55 OHM
|
Original
|
PDF
|
MTW8N60E/D
O-247
MTW8N60E
MTW8N60E/D*
AN569
MTW8N60E
DSA00109376
ad 153 transistor
|
motorola MOSFET 935
Abstract: pd 223 AN569 MTU18N50E MOTOROLA TRANSISTOR 935
Text: MOTOROLA Order this document by MTU18N50E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTU18N50E N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 18 AMPERES 500 VOLTS RDS on = 0.31 OHM This high voltage MOSFET uses an advanced termination
|
Original
|
PDF
|
MTU18N50E/D
MTU18N50E
motorola MOSFET 935
pd 223
AN569
MTU18N50E
MOTOROLA TRANSISTOR 935
|
AN569
Abstract: MTY14N100E 340G
Text: MOTOROLA Order this document by MTY14N100E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY14N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 1000 VOLTS
|
Original
|
PDF
|
MTY14N100E/D
MTY14N100E
MTY14N100E/D*
AN569
MTY14N100E
340G
|
UC3845BN USED CIRCUIT
Abstract: MBR370 UC3845BN AN1327 AN569 MOC8102 MTP3N120E MUR430 MTP3N120E-D mosfet transistor 800 volts.400 amperes
Text: MOTOROLA Order this document by MTP3N120E/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP3N120E TMOS E-FET. Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1200 VOLTS
|
Original
|
PDF
|
MTP3N120E/D
MTP3N120E
UC3845BN USED CIRCUIT
MBR370
UC3845BN
AN1327
AN569
MOC8102
MTP3N120E
MUR430
MTP3N120E-D
mosfet transistor 800 volts.400 amperes
|
2N3904
Abstract: AN569 MTP3N60E
Text: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP3N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS
|
Original
|
PDF
|
MTP3N60E/D
MTP3N60E
MTP3N60E/D*
2N3904
AN569
MTP3N60E
|
