MOTOROLA POWER TRANSISTOR REV 6 Search Results

MOTOROLA POWER TRANSISTOR REV 6 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

MOTOROLA POWER TRANSISTOR REV 6 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MC33094DW Abstract: No abstract text available Text: Freescale Semiconductor Advance Information Document Number: MC33094 Rev. 1.0, 10/2006 Ignition Control 33094 Designed for automotive ignition applications in 12 V systems, the 33094 provides outstanding control of the ignition coil when used with an appropriate Motorola Power Darlington Transistor. Engine control	Original	MC33094 MC33094DW	PDF
automotive transistor coil ignition Abstract: SPARK GAP 350v CR 109 IGNITION MODULE zener diode A 36 motorola automotive transistor coil ignition ignition coil driver cross reference MCZ33094EG Text: Freescale Semiconductor Advance Information Document Number: MC33094 Rev. 1.0, 10/2006 Ignition Control 33094 Designed for automotive ignition applications in 12 V systems, the 33094 provides outstanding control of the ignition coil when used with an appropriate Motorola Power Darlington Transistor. Engine control	Original	MC33094 automotive transistor coil ignition SPARK GAP 350v CR 109 IGNITION MODULE zener diode A 36 motorola automotive transistor coil ignition ignition coil driver cross reference MCZ33094EG	PDF
ADC 808 Abstract: bd 808 BD808 BD810 T1 BD 139 Text: MOTOROLA Order this document by BD808/D SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi	Original	BD808/D* BD808/D ADC 808 bd 808 BD808 BD810 T1 BD 139	PDF
BU806 MOTOROLA Abstract: BU806 motorola darlington power transistor NT 407 F TRANSISTOR 221A-06 transistor j 127 Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal	Original	BU806/D* BU806/D BU806 MOTOROLA BU806 motorola darlington power transistor NT 407 F TRANSISTOR 221A-06 transistor j 127	PDF
2N5758 Abstract: motorola msd6 MSD6100 1N5825 2N4398 2N5745 2N5760 Text: MOTOROLA Order this document by 2N5758/D SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage	Original	2N5758/D* 2N5758/D 2N5758 motorola msd6 MSD6100 1N5825 2N4398 2N5745 2N5760	PDF
Motorola ic Abstract: Transistor D 799 BD802 transistor BD 522 MOTOROLA TRANSISTOR 10 watt power transistor bd Text: MOTOROLA Order this document by BD802/D SEMICONDUCTOR TECHNICAL DATA BD802 Plastic High Power Silicon PNP Transistor 8 AMPERE POWER TRANSISTORS PNP SILICON 100 VOLTS 65 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi	Original	BD802/D* BD802/D Motorola ic Transistor D 799 BD802 transistor BD 522 MOTOROLA TRANSISTOR 10 watt power transistor bd	PDF
2n3055 motorola Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046 Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,	Original	1PHX11122C 2n3055 motorola tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046	PDF
MJ14002 Abstract: MJ14001 MJ14003 COMPLEMENTARY SILICON POWER TRANSISTORS 200CT Text: MOTOROLA Order this document by MJ14001/D SEMICONDUCTOR TECHNICAL DATA NPN MJ14002* PNP MJ14001 MJ14003* High-Current Complementary Silicon Power Transistors . . . designed for use in high–power amplifier and switching circuit applications, • High Current Capability — IC Continuous = 60 Amperes	Original	MJ14001/D* MJ14001/D MJ14002 MJ14001 MJ14003 COMPLEMENTARY SILICON POWER TRANSISTORS 200CT	PDF
MTP55N06Z Abstract: TMOS E-FET Text: MOTOROLA Order this document by MTP55N06Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP55N06Z TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 55 AMPERES 60 VOLTS RDS on = 18 mΩ This advanced high voltage TMOS E–FET is designed to	Original	MTP55N06Z/D MTP55N06Z MTP55N06Z TMOS E-FET	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MTY25N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY25N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 25 AMPERES 600 VOLTS	Original	MTY25N60E/D MTY25N60E MTY25N60E/D*	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MTP50N06V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP50N06V Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS on = 0.028 OHM	Original	MTP50N06V/D MTP50N06V MTP50N06V/D*	PDF
TMOS E-FET Abstract: No abstract text available Text: MOTOROLA Order this document by MTP3055VL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP3055VL Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM	Original	MTP3055VL/D MTP3055VL MTP3055VL/D* TMOS E-FET	PDF
MTP3N6 Abstract: MTP3N60E 2N3904 AN569 tl 2N3904 TRANSISTOR Text: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP3N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS	Original	MTP3N60E/D MTP3N60E MTP3N6 MTP3N60E 2N3904 AN569 tl 2N3904 TRANSISTOR	PDF
AN569 Abstract: MTP8N06E Text: MOTOROLA Order this document by MTP8N06E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP8N06E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 8.0 AMPERES 60 VOLTS	Original	MTP8N06E/D MTP8N06E MTP8N06E/D* AN569 MTP8N06E	PDF

MTP2955E Abstract: AN569 MTP2955E/D Text: MOTOROLA Order this document by MTP2955E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP2955E Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS	Original	MTP2955E/D MTP2955E MTP2955E/D* MTP2955E AN569 MTP2955E/D	PDF
transistor BD 522 Abstract: BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD801 BD802 BD808 BD810 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor ‘Motorola Preferred Device 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi	OCR Scan	BD801 BD801 transistor BD 522 BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD802 BD808 BD810	PDF
2N6488 MOTOROLA Abstract: 1N5825 221A-06 2N6487 2N6488 2N6490 2N6491 2N6497 MSD6100 ISS-20 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6487 Com plem entary Silicon P lastic Power Transistors 2N 6488* PNP . . . designed for use in general-purpose amplifier and switching applications. 2N 6490 2 N6491* • DC Current Gain Specified to 15 Amperes —	OCR Scan	2N6487 2N6490 2N6488 2N6491 O-220AB 2N6490 2N6491 2N6488 MOTOROLA 1N5825 221A-06 2N6497 MSD6100 ISS-20	PDF
motorola transistor 2N6547 Abstract: EM- 546 motor 2n6546 motorola PK 002 bt 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND Text: MOTOROLA O rder this docum ent by 2N6547/D SEMICONDUCTOR TECHNICAL DATA 2N 6547 Designer’s Data Sheet Sw itchm ode Series NPN Silicon Pow er Transistors The 2N6547 transistor is designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and	OCR Scan	2N6547/D 2N6547 motorola transistor 2N6547 EM- 546 motor 2n6546 motorola PK 002 bt 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND	PDF
2n6251 application Abstract: No abstract text available Text: MOTOROLA Order this document by 2N6251/D SEMICONDUCTOR TECHNICAL DATA 2N 6251 High V o ltag e NPN Silicon Pow er Transistors . . . designed for high voltage inverters, sw itching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.	OCR Scan	2N6251/D 2n6251 application	PDF
transistor c 3206 Abstract: BD808 transistor BD 139 IC CD 3207 BD807 bd810 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP TVansistor *Motorola Prwtorrtd Devfc« 10 AMPERE POWER TRANSISTORS PNP SILICON 60,80 VOLTS 90 WATTS . . . designed for use ¡n high power audio amplifiers utilizing complementary or quasi	OCR Scan	BD808 BD810* BD810 BD810 ti3b72S4 transistor c 3206 transistor BD 139 IC CD 3207 BD807	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS RDS on = 0.3 OHM This advanced E -F E T is a TMOS medium power MOSFET	OCR Scan	OT-223	PDF
2955v Abstract: No abstract text available Text: MOTOROLA Order this document by MTP2955V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP 2955V TM OS V™ Pow er Field E ffect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.200 OHM TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This	OCR Scan	MTP2955V/D 2955v	PDF
N6337 Abstract: n633 MOTOROLA 6-38-7 Text: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by2N6387/D 2N6387 2N 6388* Plastic Medium-Power Silicon Transistors ’ M otorola Preferred Device . . . designed for general-purpose amplifier and low -speed switching applications. • • • •	OCR Scan	by2N6387/D 2N6387 2N6388 2N6387, -220A 2N6387 2N6387/D N6337 n633 MOTOROLA 6-38-7	PDF
mosfet L 3055 motorola Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Pow er Field E ffect ransistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS RDS on = 0.15 OHM This advanced E-FET is a TMOS Medium Power MOSFET	OCR Scan	OT-223 MMFT3055E mosfet L 3055 motorola	PDF

MOTOROLA POWER TRANSISTOR REV 6 Search Results

MOTOROLA POWER TRANSISTOR REV 6 Result Highlights (5)

MOTOROLA POWER TRANSISTOR REV 6 Datasheets Context Search

MC33094DW

automotive transistor coil ignition

ADC 808

BU806 MOTOROLA

2N5758

Motorola ic

2n3055 motorola

MJ14002

MTP55N06Z

Untitled

Untitled

TMOS E-FET

MTP3N6

AN569

MTP2955E

transistor BD 522

2N6488 MOTOROLA

motorola transistor 2N6547

2n6251 application

transistor c 3206

Untitled

2955v

N6337

mosfet L 3055 motorola