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    transistor c 3206

    Abstract: BD808 transistor BD 139 IC CD 3207 BD807 bd810
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP TVansistor *Motorola Prwtorrtd Devfc« 10 AMPERE POWER TRANSISTORS PNP SILICON 60,80 VOLTS 90 WATTS . . . designed for use ¡n high power audio amplifiers utilizing complementary or quasi


    OCR Scan     		BD808 BD810* BD810 BD810 ti3b72S4 transistor c 3206 transistor BD 139 IC CD 3207 BD807 PDF

    2N2223

    Abstract: 2N2060 2N2060 MOTOROLA 2N2223A 2n2430 2N2060A 2N2480 2N2480A jan 2n2060 MD2218
    Text: MOT OROL A SC -CXSTRS/R 6367254 DE I b 3 t i 7 5 5 4 F> MOTOROLA SC XSTRS/R 96D F Collector-Em itter Voltage 2N2060 Sym b o l 2N2223.A VCEO 2N2480 2N2480A U n it 60 40 40 Vdc VCER 80 — Collector-Base Voltage VCBO 100 75 80 Vdc Emitter-Base Voltage VEBO


    OCR Scan     		0S37b 2N2060 2N2223 2N2480 2N2480A 2N2480 2N2060 MOTOROLA 2N2223A 2n2430 2N2060A jan 2n2060 MD2218 PDF