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    Accelerated Memory Production Inc AMPSD064G3S-00WS1YE-S2

    MEM CARD SDXC 64GB 10 UHS 1 MLC
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    Accelerated Memory Production Inc AMPSD064G3S-00WS1YE-3P

    MEM CRD64GB 10UHSI U3V30 AMLC
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    MPSD06 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MPSD06 Micro Electronics Semiconductor Device Data Book Scan PDF
    MPSD06 Motorola Low Level and General Purpose Amplifiers Scan PDF
    MPS-D06 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MPSD06 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MPSD06 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MPS-D06 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MPSD06 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    MPSD06 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MPSD06 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MPS-D06 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    MPS-D06 Unknown Cross Reference Datasheet Scan PDF
    MPSD06 Semico Audio Frequency Small Signal Transistors Scan PDF
    MPSD06C Unknown Semiconductor Master Cross Reference Guide Scan PDF

    MPSD06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original
    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    transistor 2N3563

    Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
    Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .


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    PDF

    1N4548

    Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
    Text: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A


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    PDF 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N4548 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428

    MRF472

    Abstract: MRF245 MRF243 MPSA13K MPS6579 MRF420 BF497 MRF304 MRF250 PE210B
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO BSW43 BSW43 BSW43 BSX52 MMBT4124 MMBT4124 MMBT4124 KT379B ZTX114 2SC137 -5 10 ~~~~ 2SD1581M 2SD1581L JE9143A 2SD1581K JE9143B JE9143 JE9143C 2N5188 -15 20 ~~~~~D BSY58 BF374 BF375C 2SC1293 2SC1293 2SC1293


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    PDF BSW43 BSX52 MMBT41ran MRF472 MRF245 MRF243 MPSA13K MPS6579 MRF420 BF497 MRF304 MRF250 PE210B

    2N339IA

    Abstract: No abstract text available
    Text: Low Level and General Purpose Amplifiers TY PE NO. PO LA ­ R IT Y M A X IM U M R A T IN G S CA SE Pd m W Ic (m A ) VcEO (V) H FE m in m ax Ic (m A ) V ce V CE(sat) m ax (V) (V) It m in Cob m ax Ic (m A ) (M H z) (M H z) N .F. m ax (dB ) MPSD06 MPSD56 N


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    PDF MPSD06 MPSD56 PN930 PN17I1 PN3548 PN3565 PN3566 PN3694 PN4249 PN4250 2N339IA

    MPS9631

    Abstract: T1S91 MPS9632 MPS9630 TIS92 MPS9633 SE4010 TIS61 MPS9600 MPS9634
    Text: Low Level and General Purpose Amplifiers TYPE POLA­ NO. RITY MPS9600 MPS9601 MPS9602 MPS9630 MPS9631 N N N N N CASE TO-92A TO-92A TO-92A TO-92A TO-92A VCE sat HFE MAXIMUM RATINGS Pd IC VCEO (mW) (mA) (V) min max 300 300 300 350 350 100 100 100 100 100 12


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    PDF MPS9600 O-92A MPS9601 MPS9602 MPS9630 MPS9631 T1S91 MPS9632 TIS92 MPS9633 SE4010 TIS61 MPS9634

    TRANSISTOR 1003

    Abstract: MPSU45 MPSA43C MPSD01C D16P1C D33D21C MPSD02C MPSD03C MPSD04C MPSD05C
    Text: BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type DC Current Gain IcBO VcE sat f lc Max. ^(BR)CBO V(BR)CEO V(BR)EBO Max. @vCB hFE ^FE (aic @vCE Max. c Min. @lc Cot,1 V NF1 (mA) (V) (nA) (V) Min. Max. (mA) (V) (V) (mA) (MHz) (mA) (p H (ns) (dB)


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    PDF MPSA43C MPSD01C MPSD02C MPSD03C MPSD04C MPSD05C D33D26C D33D27C D33D29C D33D30C TRANSISTOR 1003 MPSU45 D16P1C D33D21C

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


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    PDF 111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor

    2sc 9015

    Abstract: 2SC644 CS9015 2N4248 scr 4059 transistor MPS 6518 mpsa09 2SC923 2N3550 2SC644 transistor
    Text: 7 -. SEMICONDUCTORS INC OIE I | SlBktSO 0000275 1 | ¿Lf-/? TYPE NO. ; POLARITY 1 Audio Frequency Small Signal Transistors MAXIMUM RATINGS CASE HFE Pd mW) >C (mA) VCEO (V) min max •c (mA) VCE (V) VCE(SAT) max ■c (V) (mA) fT min (MHz) Cob max (pF) 5+


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    PDF BCW86 O-92F BCY56 BCY57 BCY58 BCY59 2sc 9015 2SC644 CS9015 2N4248 scr 4059 transistor MPS 6518 mpsa09 2SC923 2N3550 2SC644 transistor

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    2SA532

    Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
    Text: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G


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    PDF 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    TRANSISTOR 1003

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND 8514 01 9 SPRAGUE, GR OU P ^3 D • flSlBSSD G0G35t>7 T ■ S E M I C O N D S / ICS 93D 03567 BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘IMPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type MPSA43C MPSD01C MPSD02C MPSD03C


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    PDF G0G35t MPSA43C MPSD01C MPSD02C MPSD03C MPSD04C MPSD05C MPSD06C MPSL01C MPSU45C TRANSISTOR 1003

    wiring diagram audio amplifier ic 6283

    Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
    Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor


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    PDF 4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838

    gk 106

    Abstract: BCHL MICRO ELECTRONICS ltd transistor transistor TO-106 422 MPS6566 transistor
    Text: MICRO ELECTRONICS LTD 51E D • bGT17ññ 0Q0107M 422 ■ MEHK Low Level and G eneral Purpose Amplifiers TYPE NO. POLARITY T -2 7 -0 1 CASE MAXIM UM RATINGS Pd <mW mA| VCEO (V) 'c V CE(SAT) h fe 'c min max (m A | V CE (V) max (V) 'c (mA) MPS3608 MPS3707


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    PDF bGT17ñ 0Q0107M O-92A gk 106 BCHL MICRO ELECTRONICS ltd transistor transistor TO-106 422 MPS6566 transistor

    transistor 2N929

    Abstract: 2C5088 MPS-A10 SILICON SMALL-SIGNAL DICE MPSA20 MPSA10 2n929 2N5172 SILICON DICE motorola MPS5133
    Text: NOTOROLA SC {DIODES/OPTO* 6367255 MOTOROLA SC 34 D I O D E S /OPTO ' ÏF|bBb7ESS 0 0 3 7 ^ 34C 37999 . SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) 7 " D ~7 2C5088 DIE NO. — NPN LINE SOURCE: DMB100 This die provides performance similar to that of the following device types:


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    PDF DMB100 2N929 2N930 2N5172 MMCM930 MMT930 MPS929 MPS930 MPS5133 MPS5172 transistor 2N929 2C5088 MPS-A10 SILICON SMALL-SIGNAL DICE MPSA20 MPSA10 SILICON DICE motorola

    MPSD06

    Abstract: MPS-D06 MPS-D56 MPSD56
    Text: MPS-D06 NPN SILICON MPS-D56 PNP C O M P L E M E N T A R Y S ILIC O N A N N U L A R C O M PLEM EN TA R Y SILIC O N T R A N SIST O R S T R A N S IS T O R S . . . designed fo r use in low voltage am plifier/driver circuits. • Excellent L E D Segment Driver


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    PDF MPS-D06 MPS-D56 HPS-056 MPSD06 MPSD56

    TIS90

    Abstract: T1S97 TIS92 V/mpsa09
    Text: Low Level and General Purpose Amplifiers MAXIMUM RATINGS V e to Pi Ic mW (mA) (V) H,"E VcE (V) max (V) Ic (mA) 2 10 10 0.1 10 10 10 10 5 5 0.5 0.4 0.4 0.5 0.5 50 10 10 10 10 300 # 500 300 # 700 300 1 10 1 0.1 1 5 5 5 5 5 0.5 0.5 0.5 10 10 10 - - 0.3 100


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    PDF MPS6523 MPS6565 MPS6566 MPS6571 MPS6573 MPS6574 MPS6575 MPS6576 MPS8097 MPS8098 TIS90 T1S97 TIS92 V/mpsa09

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


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    PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G

    mpsa18

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND GROUP T3 85 14 0 19 SPRAGUE. D • ÔS13ÛS0 OGOBSTH S E M I C O N D S / ICS 1 ■ 93 D 0 3 5 9 2 X> PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain ^CBO Device


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    PDF MPSA12 MPSA13 MPSA14 MPSA18 MPSA20 MPSA25 MPSA26 MPSA27 MPSA28 MPSA29