Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MRA1417 Search Results

    MRA1417 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRA1417-11 Advanced Semiconductor Transistor Original PDF
    MRA1417-2 Advanced Semiconductor Transistor Original PDF
    MRA1417-6 Advanced Semiconductor Transistor Original PDF
    MRA1417-6H Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF

    MRA1417 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRA1417-2

    Abstract: No abstract text available
    Text: MRA1417-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRA1417-2 is a Common Base Device Designed for Class C Power Amplifier Applications up to 1.7 GHz. PACKAGE STYLE 250 2L FLG C FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting • Input Matching


    Original     		PDF MRA1417-2 MRA1417-2

    MRA1417-6

    Abstract: MRA1417-6H
    Text: MRA1417-6H NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA1417-6H is a Common Base Device Designed for Class C Amplifier Applications in L-Band FM Microwave Links. PACKAGE STYLE .250 2L FLG B FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting


    Original     		PDF MRA1417-6H MRA1417-6H MRA1417-6

    mra14

    Abstract: No abstract text available
    Text: MRA14171-11H NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA1417-11H is a Common Base Device Designed for Class C Amplifier Applications in L-Band FM Microwave Links. PACKAGE STYLE 250 2L FLG C FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting


    Original     		PDF MRA14171-11H MRA1417-11H mra14

    MRA1417-11

    Abstract: No abstract text available
    Text: MRA1417-11 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRA1417-11 is a Common Base Device Designed for Class C Power Amplifier Applications up to 1.7 GHz. FEATURES INCLUDE: PACKAGE STYLE 250 2L FLG C • Gold Metallization • Emitter Ballasting


    Original     		PDF MRA1417-11 MRA1417-11

    MRA1417-2

    Abstract: No abstract text available
    Text: MRA1417-2 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)50â V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.5m @V(CBO) (V) (Test Condition)28


    Original     		PDF MRA1417-2

    MLED96

    Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
    Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B


    Original     		PDF ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 MLED96 BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA

    TRANSISTOR SUBSTITUTION 1993

    Abstract: trw RF POWER TRANSISTOR trw rf semiconductors testing good or bad electronic components circuit AN1032 trw rf transistor MIL-C-17 MRA1417-6 AN-1032 MOTOROLA TRANSISTOR 726
    Text: Order this document by AN1032/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1032 HOW LOAD VSWR AFFECTS NON-LINEAR CIRCUITS Prepared by: Don Murray RF Devices Division Lawndale, Calif. Reprinted from RF Design Magazine If your amplifiers test out fine in the lab but fail QC


    Original     		PDF AN1032/D AN1032 TRANSISTOR SUBSTITUTION 1993 trw RF POWER TRANSISTOR trw rf semiconductors testing good or bad electronic components circuit AN1032 trw rf transistor MIL-C-17 MRA1417-6 AN-1032 MOTOROLA TRANSISTOR 726

    TRANSISTOR SUBSTITUTION 1993

    Abstract: MRA1417-6 motorola 5118 TRANSISTOR SUBSTITUTION DATA BOOK 1993 AN1032 TRW Microwave Detector trw RF POWER TRANSISTOR MIL-C-17 726 MOTOROLA TRANSISTORS MOTOROLA TRANSISTOR 726
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN1032/D SEMICONDUCTOR APPLICATION NOTE AN1032 How Load VSWR Affects NonĆlinear Circuits Freescale Semiconductor, Inc. Prepared by: Don Murray RF Devices Division Lawndale, Calif. Reprinted from RF Design Magazine


    Original     		PDF AN1032/D AN1032 TRANSISTOR SUBSTITUTION 1993 MRA1417-6 motorola 5118 TRANSISTOR SUBSTITUTION DATA BOOK 1993 AN1032 TRW Microwave Detector trw RF POWER TRANSISTOR MIL-C-17 726 MOTOROLA TRANSISTORS MOTOROLA TRANSISTOR 726

    1417-11

    Abstract: MRA1417
    Text: MO TO ROLA • SEMICONDUCTOR TECHNICAL DATA MRA1417 Series The RF Line M ic ro w a v e P o w er Transistors 7 to 8 dB 1.4-1.7 GHz 2 TO 25 WATTS BROADBAND MICROWAVE POWER TRANSISTORS . . . designed p rim a rily fo r w id e b a n d , large-signal o u tp u t and d riv e r a m p lifie r stages in


    OCR Scan     		PDF MRA1417 1417-11

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


    OCR Scan     		PDF PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239

    1417H

    Abstract: C1394c A-1417 MRA1417H
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R A 1417H Series The RF Line M icrow ave Power Transistors . . d esig n ed p rim a rily fo r w id e b a n d , large-signal o u tp u t and d riv e r a m p lifie r stages in the 1.4 to 1.7 GHz fre q u e n cy range. 7.4 to 8 dB


    OCR Scan     		PDF 1417H RA1417-11H C1394c A-1417 MRA1417H

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
    Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .


    OCR Scan     		PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643