MRB11175Y Search Results

MRB11175Y Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MRB11175Y		Philips Semiconductors	Pulsed Microwave Power Transistor		Original	PDF

MRB11175Y Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: MRB11175Y Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)65 I(C) Max. (A)12 Absolute Max. Power Diss. (W)500¥ Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)	Original	PDF	MRB11175Y
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE I UL DbE D 1 bbS3T31 0D1SDST I MRB12175YR MAINTENANCE TYPE for new design use MRB11175Y PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IFF applications.	OCR Scan	PDF	bbS3T31 MRB12175YR MRB11175Y)
Untitled Abstract: No abstract text available Text: 1 N AMER PHILIPS/DISCRETE ObE D • ^53=131 0D1SDS1 >4 ■ MRB11175Y T - 3 3 - *T PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at 1,09 GHz,	OCR Scan	PDF	MRB11175Y bb53T31 Q01S05M 7Z210t3
RTC11175Y Abstract: MRB11175Y Text: H AMER PHILIPS/DISCRETE ObE D • bbSBTBl OD1SGS1 4 ■ MRB11175Y T - 33- 6" A PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at 1,09 GHz,	OCR Scan	PDF	MRB11175Y FO-67 T-33-/LS 7Z21013 7294SÃ RTC11175Y MRB11175Y
MRB11175Y Abstract: T-31-21 A 3121 IC FO-67 Text: MRB11175Y PHILIPS INTERNATIONAL SbE D 711002b D04t33G 3Mb H P H I N PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor intended fo r use in m ilita ry and professional applications. It operates only in pulsed conditions and is recommended fo r IFF applications at 1.09 GHz.	OCR Scan	PDF	MRB11175Y 711062b D04b330 FO-67 MRB11175Y 711005b. 004b333 T-31-21 A 3121 IC
MRB11175Y Abstract: T-31-21 of ic A 3121 of ic 3121 A 3121 IC Text: '- v 2 / MRB11175Y PHILIPS IN TE RNATIONAL ShE D • J V _ 711002b OOMbaaO 3Mb H P H I N PULSED MICROWAVE POWER TRANSISTOR NPN silicon p ow er tran sisto r intended f o r use in m ilita ry and professional applications. It operates o n ly in pulsed c o n d itio n s and is recom m ended fo r IFF ap p lica tio ns at 1.09 GHz.	OCR Scan	PDF	MRB11175Y 711002b FO-67 T-31-21 71lq6st, d4b333 MRB11175Y T-31-21 of ic A 3121 of ic 3121 A 3121 IC
MX0912B250Y Abstract: RV2833B5X RV3135B5X RX1214B150W RX1214B300Y RZ1214B125Y RZ1214B35Y RZ1214B65Y RZ2731B16W MRB11175Y Text: N AMER P H I L I P S / D I S C R E T E 5SE 3> • bbSH^! OOltiSBl 0 ■ T'-J3 3 “' ^ / Power Devices 53 MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE f GHz Vcc (Vi ' U m @ DUTY CYCLE I (%> . Pi. (W> A - ; VC (%) RADAR PULSED L-BAND RZ1214B35Y FO-57C 1.2 - 1.4	OCR Scan	PDF	RZ1214B35Y FO-57C RZ1214B65Y RZ1214B125Y RX1214B150W FO-91 RX1214B300Y MX0912B250Y RV2833B5X RV3135B5X RZ2731B16W MRB11175Y
BPW22A Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey	OCR Scan	PDF	BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
bf0262a Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94 Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A	OCR Scan	PDF	1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	PDF	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE 5SE D • bbSHiai 0011.231 ■ ^ 3 3 ~ \ Power Devices MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE < G H z Vcc (V) U 1.2 - 1.4 1.2 -1 .4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 42 50	OCR Scan	PDF	RZ1214B35Y FO-57C RZ1214B65Y RZ1214B125Y RX1214B150W MRB11175Y MRB11350Y MSB11900Y
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	PDF	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
FET BFW10 Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11 Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI	OCR Scan	PDF	BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
TXD10K40 Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40	OCR Scan	PDF	bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G