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    Motorola Semiconductor Products MRF21125S

    TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391BVAR
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    Quest Components MRF21125S 11
    • 1 $66.3
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    MRF21125S Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF21125S Motorola RF Power Field Effect Transistor Original PDF
    MRF21125S Motorola RF POWER FIELD EFFECT TRANSISTORS Original PDF
    MRF21125S Motorola RF Power Field Effect Transistors Scan PDF
    MRF21125SR3 Freescale Semiconductor RF Power Field Effect Transistors Original PDF
    MRF21125SR3 Freescale Semiconductor 2170 MHz, 125 W, 28 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF21125SR3 Motorola RF Power Field Effect Transistor Original PDF
    MRF21125SR3 Motorola RF POWER FIELD EFFECT TRANSISTORS Original PDF

    MRF21125S Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21125R3 MRF21125SR3

    transistor motorola 236

    Abstract: 465B MRF21125 MRF21125S MRF21125SR3 j686
    Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S MRF21125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21125/D MRF21125 MRF21125S MRF21125SR3 MRF21125 MRF21125S transistor motorola 236 465B MRF21125SR3 j686

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF21125/D MRF21125 MRF21125S MRF21125/D

    100B104JCA50X

    Abstract: 465B MRF21125 MRF21125R3 MRF21125SR3 j686
    Text: Freescale Semiconductor Technical Data Document Number: MRF21125 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21125 MRF21125R3 MRF21125SR3 MRF21125R3 100B104JCA50X 465B MRF21125 MRF21125SR3 j686

    MRF21125

    Abstract: 465B MRF21125S
    Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF21125/D MRF21125 MRF21125S MRF21125 465B MRF21125S

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF21125R3 MRF21125SR3 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21125/D MRF21125R3 MRF21125SR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF21125 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21125 MRF21125R3 MRF21125SR3 MRF21125R3

    j686

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF21125/D MRF21125 MRF21125S j686

    MRF21125R3

    Abstract: MRF21125SR3 465B MRF21125
    Text: Freescale Semiconductor Technical Data Document Number: MRF21125 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21125 MRF21125R3 MRF21125SR3 MRF21125R3 MRF21125SR3 465B MRF21125

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF21125/D MRF21125 MRF21125S

    j686

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n c l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21125 MRF21125S j686

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF21125/D MRF21125 MRF21125S

    465B

    Abstract: AN1955 MRF21125 MRF21125R3 MRF21125SR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF21125R3 MRF21125SR3 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs


    Original     		PDF MRF21125/D MRF21125R3 MRF21125SR3 MRF21125R3 465B AN1955 MRF21125 MRF21125SR3

    465B

    Abstract: MRF21125 MRF21125S MRF21125SR3 100b1r
    Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S MRF21125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21125/D MRF21125 MRF21125S MRF21125SR3 MRF21125 MRF21125S 465B MRF21125SR3 100b1r

    n channel MOSFET 45 w 10 v

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S MRF21125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21125S MRF21125SR3 MRF21125 n channel MOSFET 45 w 10 v

    j686

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S MRF21125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF dB110 MRF21125 MRF21125S MRF21125SR3 j686

    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23

    PN channel MOSFET 10A

    Abstract: Cree Microwave UGF21125
    Text: UGF21125 125W, 2.17GHz, 28V, Broadband RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for W-CDMA, TDMA, CDMA, GSM single and Multi-Carrier power amplifiers in


    Original     		PDF UGF21125 17GHz, 2135MHz, 2145MHz f1-10MHz 10MHz) UGF21125 PN channel MOSFET 10A Cree Microwave

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF21125 RDMRF21125WCDMA

    stripline directional couplers

    Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
    Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,


    Original     		PDF SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
    Text: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station


    Original     		PDF SG1009Q42004 MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor

    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    k 1225 data

    Abstract: mosfet k 1225 transistor tt 2170 100B104JCA50X RF chip 81 210 W 20 IMO TDMA TT 2170 MRF21125 MRF21125S
    Text: MOTOROLA O rder this docum ent by M RF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W -C D M A base station applications at frequencies from 2110


    OCR Scan     		PDF MRF21125/D 465C-01 MRF21125S) MRF21125 MRF21125S k 1225 data mosfet k 1225 transistor tt 2170 100B104JCA50X RF chip 81 210 W 20 IMO TDMA TT 2170 MRF21125S